RF AMPLIFIERS ROHS COMPLIANT: YES

Attenuators 1 dB LSB 5Bit dig atten Chip 0.1-40 GHz

HBT Vector Modulator SMT, 700 - 1000 MHz Features: Continuous Phase Control: 360° Continuous Gain Control: 40 dB Low Output Noise Floor: -162 dBm/Hz High Input IP3: +34 dBm 16 Lead 3×3mm SMT Package: 9mm2

The HMC1019ALP4E is a broadband 5-bit GaAs IC digital attenuator in a low cost leadless surface mount package. Covering 0.1 to 30.0 GHz, the insertion loss is less than 4.0 dB typical. The attenuator bit values are 0.5 (LS B), 1, 2, 4, 8 for a total attenuation of 15.5 dB. Attenuation accuracy is excellent at ?0.3 dB typical step error with an IIP3 of +45 dBm. The control interface is CMOS/TTL compatible and accepts a three wire serial input. The HMC1019ALP4E features a user selectable power up state and a serial output port for cascading other Analog Devices serial controlled components.APPLICATIONS Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications Sensors Test & Measurement Equipment

The ADL9006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (P1dB) while requiring 53 mA from a 5 V supply. The ADL9006 is self biased with only a single positive supply needed to achieve a supply current (IDD) of 53 mA.The ADL9006 amplifier input and output are internally matched to 50 ?.ADL9006CHIPSThe ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The amplifier provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of output third-order intercept (IP3), 20 dBm of output saturated power (PSAT), and 19 dB of power output for 1 dB compression (P1dB) while requiring a 55 mA power supply current (IDD) from a 5 V total supply voltage. The ADL9006CHIPS is self biased with only a single positive supply needed to achieve an IDD of 55 mA.The ADL9006CHIPS amplifier input and output are internally matched to 50 ? facilitating integration into multichip modules (MCMs).APPLICATIONS Test instrumentation Military and space Local oscillator driver amp ADL9006CHIPS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space

The HMC802ALP3E is a broadband bidirectional 1-bitGaAs IC digital attenuator in a low cost leadless sur-face mount package. This single positive control linedigital attenuator utilizes off chip AC ground capac-itors for near DC operation, making it suitable for awide variety of RF and IF applications. Covering DCto 10 GHz, the insertion loss is less than 3 dB typicaland attenuation accuracy is excellent at ±0.6 dB typ-ical. The attenuator also features a high IIP3 of +55dBm. One TTL/CMOS control input is used to selectthe attenuation state and a single Vdd bias of +5V isrequired. Applications Test equipment and sensors ISM, MMDS, WLAN, WiMAX, WiBro Microwave radio & VSAT Cellular infrastructure

Phase Detectors/Shifters

RF Amplifier

RF Amplifier

EVALUATION BOARD RF LOW NOISE AMPLIFIER; Silicon Manufacturer:Analog Devices; Silicon Core Number:HMC504; Kit Application Type:RF / IF; Kit Contents:Eval Board HMC504; Product Range:- ;RoHS Compliant: Yes