RF Mixer DBL-BAL mix SMT 9 - 15 GHz

RF Mixer

RF Amplifier lo Noise amp SMT, 3.1 - 3.9 GHz

RF Modules Ultralo PhaseNoise Dist amp Modul2-18GHz

RF Amplifier GaAs HEMT MMIC Med pow amp, 37 - 45 GHz

The HMC1040LP3CE is a self-biased GaAs MMIC Low Noise Amplifier housed in a leadless 3x3 mm plastic surface mount package. The amplifier operates between 24 and 43.5 GHz, delivering 23 dB of small signal gain, 2.2 dB noise figure, and output IP3 of +22 dBm, while requiring only 70 mA from a +2.5 V supply. The P1dB output power of +12 dBm enables the LNA to function as a LO driver for many of Hittite’s balanced, I/Q and image reject mixers. The HMC1040LP 3CE features I/Os that are DC blocked and internally matched to 50 Ohms, and is ideal for high capacity microwave radios and VSAT applications.Applications Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems

The ADMV4530 is a highly integrated upconverter with an in-phase/quadrature (I/Q) mixer that is ideally suited for next generation Ka band satellite communications.An integrated low phase noise, fractional-N phase-locked loop (PLL) with a voltage controlled oscillator (VCO) and internal 2? multiplier generate the necessary on-chip local oscillator (LO) signal for the I/Q mixer, eliminating the need for external frequency synthesis. The VCO uses an internal autocalibration routine that allows the PLL to select the necessary settings and locks in approximately 100 ?s.The single-ended reference input to the PLL operates up to 500 MHz and features internal reference dividers and a multiplier for added flexibility. Additionally, the phase frequency detector (PFD) comparison frequency can be up to 250 MHz for integer mode and 160 MHz for fraction-N mode.The upconverter consists of an I/Q mixer that can operate in either I/Q mode with 500 MHz of bandwidth or in IF mode up to 3 GHz of bandwidth, which allows various radio architectures and backward compatibility with legacy systems.Immediately following the I/Q mixer are stages of gain and variable attenuation. The configuration can achieve a minimum 1 dB compression point (P1dB) compression point of 19 dBm, eliminating the need for external stages of gain.A programmable 4-wire serial port interface (SPI) allows adjustment of the quadrature phase for optimum sideband suppression. In addition, the SPI allows nulling of LO feedthrough in IF mode. In I/Q mode, the LO feedthrough can be nulled by applying external dc offset to the differential baseband I/Q inputs.An IF automatic gain control (AGC) adjusts the IF variable gain amplifier (VGA) to compensate for input power variations. During normal operation, this AGC feature can be enabled or disabled via the SPI. When disabled during normal operation, the AGC feature only works on a test tone during power-down mode to track temperature variations.The ADMV4530 upconverter comes in a RoHs compliant, 6 mm ? 6 mm, 40-terminal land grid array (LGA) package. The ADMV4530 operates over the ?40?C to +85?C case temperature range.Applications Satellite communication Point to point microwave communication

The ADRF5021 is a general-purpose single-pole, double-throw (SPDT) switch manufactured using a silicon process. It comes in a 3 mm ? 3 mm, 20-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 9 kHz to 30 GHz.This broadband switch requires dual supply voltages, +3.3 V and ?2.5 V, and provides CMOS/LVTTL logic-compatible control.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5024 is a reflective, single-pole double-throw (SPDT) switch manufactured in the silicon process.This switch operates from 100 MHz to 44 GHz with better than 1.7 dB of insertion loss and 35 dB of isolation. The ADRF5024 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.The ADRF5024 draws a low current of 14 ?A on the positive supply of +3.3 V and 120 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)compatible controls.The ADRF5024 is pin-compatible with the ADRF5025, low frequency cutoff version, which operates from 9 kHz to 44 GHz.The ADRF5024 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.The ADRF5024 comes in a 2.25 mm ? 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate between ?40?C to +105?C.The ADRF5024-EP supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5025 is a reflective single-pole double-throw (SPDT) switch, manufactured in silicon process.This switch operates from 9 kHz to 44 GHz with better than 1.6 dB of insertion loss and 35 dB of isolation. The ADRF5025 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.The ADRF5025 draws a low current of 14 ?A on the positive supply of +3.3 V and 120 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5025 is pin compatible with the ADRF5024, low frequency cutoff version, which operates from 100 MHz to 44 GHz.The ADRF5025 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.The ADRF5025 comes in a 2.25 mm ? 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)