The ADL5545 is a single-ended RF/IF gain block amplifier that provides broadband operation from 30 MHz to 6 GHz. The ADL5545 provides over 36 dBm of OIP3 using only 56 mA from a 5 V supply.The ADL5545 provides a gain of 24 dB, which is stable over frequency, temperature, power supply, and from device to device. The amplifier is offered in the industry-standard SOT-89 package and is internally matched to 50 ? at the input and output, making the ADL5545 very easy to implement in a wide variety of applications. The only external components required are the input/output ac coupling capacitors, power supply decoupling capacitors, and dc bias inductor.The ADL5545 is fabricated on an InGaP HBT process and has a high ESD rating of ?1.5 kV (Class 1C). The ADL5545 is also fully specified for operation across the wide temperature range of ?40?C to +105?C. A fully populated RoHS-compliant evaluation board is available.

The ADL5605 is a broadband, two-stage, 1 W RF driver amplifier that operates over a frequency range of 700 MHz to 1000 MHz.The ADL5605 operates on a 5 V supply voltage and a supply current of 307 mA. The driver also incorporates a fast power-up/power-down function for TDD applications, applications that require a power saving mode, and applications that intermittently transmit data.The ADL5605 is fabricated on a GaAs HBT process and is packaged in a compact 4 mm ? 4 mm, 16-lead LFCSP that uses an exposed paddle for excellent thermal impedance. The ADL5605 operates from ?40?C to +85?C. A fully populated evaluation board tuned to 943 MHz is also available.ApplicationsWireless infrastructureAutomated test equipmentISM/AMR applications

The ADL5920 is an ultrawideband, bidirectional detector that simultaneously measures forward and reverse rms power levels in a signal path, along with the return loss.The forward and reverse power traveling through the integrated bidirectional bridge is measured using two 50 dB linear in dB rms detectors. The detector output voltages, available at the VRMSF and VRMSR pins, are proportional to the forward and reflected power in dBm. A third, differential, output produces a voltage proportional to the return loss (reflection coefficient) in dB, closely related to the voltage standing wave ratio (VSWR). The common-mode level of this output is externally adjustable through the VOCM pin.The primary transmission line of the bidirectional bridge, from RFIN to RFOUT (or vice versa) is dc-coupled and allows small amounts of dc bias current through the bridge. When dc-coupled to source and load, the positive and negative supply pins of the ADL5920 must be connected to +5 V and ?2.5 V, respectively (relative to the dc voltage at RFIN and RFOUT). The internal detector circuitry is also dc-coupled to the directional bridge to support measurements down to 9 kHz.The maximum input signal on each of the RF ports (RFIN and RFOOUT) is 30 dBm for open and shorted terminations and 33 dBm for a matched termination.The ADL5920 draws 160 mA from a 5 V supply and has a low power, power-down mode controlled through the PWDN/TADJS pin.The device is supplied in a 32-lead, 5 mm ? 5 mm LFCSP and is specified for ambient operating temperatures in the ?40?C to +85?C range.Multifunction pin names may be referenced by their relevant function only.Applications Industrial metering Broadband inline power and return loss measurement Transmit power control and automatic level control in wireless transmitters, signal generators, network analyzers, and wireless communications testers Condition based monitoring of system modules, cables, and connectors

The ADL6317 is a transmit variable gain amplifier (VGA) that provides an interface from radio frequency digital-to-analog converters (RF DACs), transceivers, and systems on a chip (SoC) to power amplifiers. Integrated balun and hybrid couplers allow high performance RF capability in the frequency range of 1500 MHz to 3000 MHz.To optimize performance vs. power level, the ADL6317 includes a voltage variable attenuator (VVA), high linearity amplifiers, and a digital step attenuator (DSA). All of the devices integrated into the ADL6317 are programmable via a 4-wire serial port interface (SPI).The ADL6317 is manufactured on an advanced silicon germanium (SiGe), bipolar complementary metal oxide semiconductor (BiCMOS) process.Applications 2G/3G/4G/long-term evolution (LTE) in FDD/TDD broadband communication systems

The ADL8104 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise, wideband, high linearity amplifier that operates from 0.4 GHz to 7.5 GHz.The ADL8104 provides a typical gain of 15 dB at 0.6 GHz to 6 GHz, a 3.5 dB typical noise figure at 0.4 GHz to 6 GHz, a 20 dBm typical output power for 1 dB compression (OP1dB) at 0.6 GHz to 6 GHz, and a typical output third-order intercept (OIP3) of 32 dBm at 0.6 GHz to 6 GHz, requiring only 150 mA from a 5 V drain supply voltage. The low noise amplifier has a high output second-order intercept (OIP2) of 52 dBm typical at 0.6 GHz to 6 GHz, making the ADL8104 suitable for military and test instrumentation applications.The ADL8104 also features inputs and outputs that are internally matched to 50 ?. The RFIN and RFOUT pins are internally ac-coupled and the bias inductor is also integrated, making the ADL8104 ideal for surface-mounted technology (SMT)-based, high density applications.The ADL8104 is housed in an RoHS-compliant, 3 mm ? 3 mm, 16-lead LFCSP.APPLICATIONSTest instrumentationMilitary communications

The ADL8106 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), wideband low noise amplifier that operates from 20 GHz to 54 GHz. The ADL8106 provides a gain of 21.5 dB, an output power for 1 dB compression (OP1dB) of 14 dBm, and a typical output third-order intercept (OIP3) of 21.5 dBm at 30 GHz to 44 GHz. The ADL8106 requires 120 mA from a 3 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) wide gold ribbon bond of 0.076 mm to 0.152 mm (3 mil to 6 mil) minimal length.

The ADL9006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (P1dB) while requiring 53 mA from a 5 V supply. The ADL9006 is self biased with only a single positive supply needed to achieve a supply current (IDD) of 53 mA.The ADL9006 amplifier input and output are internally matched to 50 ?.ADL9006CHIPSThe ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The amplifier provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of output third-order intercept (IP3), 20 dBm of output saturated power (PSAT), and 19 dB of power output for 1 dB compression (P1dB) while requiring a 55 mA power supply current (IDD) from a 5 V total supply voltage. The ADL9006CHIPS is self biased with only a single positive supply needed to achieve an IDD of 55 mA.The ADL9006CHIPS amplifier input and output are internally matched to 50 ? facilitating integration into multichip modules (MCMs).APPLICATIONS Test instrumentation Military and space Local oscillator driver amp ADL9006CHIPS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space

The ADMV1017 is a silicon germanium (SiGe), microwave, upconverter and downconverter optimized for 5G radio designs operating in the 24 GHz to 29.5 GHz frequency range.The upconverter offers two modes of frequency translation. The device is capable of direct conversion to radio frequency (RF) from differential baseband I/Q input signals, as well as single-sideband (SSB) upconversion from complex intermediate frequency (IF) inputs. Alternatively, the differential baseband I/Q input path can be disabled and a modulated, single-ended, complex IF signals from 3 GHz to 10.5 GHz can be fed to the IF path. These signals can then be upconverted to 24 GHz to 29.5 GHz while rejecting the unwanted sideband by typically better than 25 dBc. The serial port interface (SPI) provides adjustment of the quadrature phase to allow optimum sideband rejection. In addition, the SPI interface allows powering down the output envelope detector to reduce power consumption when carrier feed through optimization is not necessary.The downconverter offers two modes of frequency translation. The device is capable of direct quadrature demodulation to differential baseband I/Q output signals, as well as image rejection downconversion to a single-ended complex IF output carrier frequency. The differential baseband outputs can be dc-coupled. More typically, however, the I/Q outputs are ac-coupled with a sufficiently low high-pass corner frequency to ensure adequate demodulation accuracy. The I/Q baseband output common-mode voltage is programmable between 0.75 V and 2.15 V. The SPI interface provides fine adjustment of the quadrature phase to optimize I/Q demodulation performance. Alternatively, the baseband I/Q outputs can be disabled, and the I/Q signals can be passed through an on-chip, active balun to provide two, single-ended, complex IF outputs between 3 GHz and 10.5 GHz. When the device is used as an image rejecting down-converter, the unwanted image term is typically rejected to better than 25 dBc below the desired sideband. The ADMV1017 offers a square law power detector to allow monitoring of the power levels at the mixer inputs. The detector output provides closed-loop control of the RF digital step attenuator via an external automatic gain control (AGC) loop.The ADMV1017 upconverter and downconverter is housed in a compact, thermally enhanced, 9 mm ? 8 mm, land grid array (LGA) package. The ADMV1017 operates over the ?40?C to +95?C case temperature range. Throughout the figures in the data sheet, Rx means receiver and Tx means transmitter.APPLICATIONS5G applicationsPoint to point microwave radiosRadar and electronic warfare systemsInstrumentation and automatic test equipment (ATE)

RF Amplifier dig Variable-Gain

Attenuators 5 dB LSB 6-Bit dig atten SMT