The HMC7357 is a three-stage GaAs pHEMT MMIC Medium Power Amplifier that operates between 5.5 and 8.5 GHz. The amplifier provides 29 dB of gain and +35 dBm of saturated output power at 34% PAE from a +8V supply. With an excellent Output IP3 of +41.5 dBm, the HMC7357 is ideal for linear applications such as high capacity point-to-point and point-to-multi-point radios or VSAT/SATCOM applications demanding +35 dBm of efficient saturated output power. The RF I/Os are internally matched to 50 Ohms for ease of use. The HMC7357 is packaged in a leadless 5x5 mm plastic surface mount package and is compatible with surface mount manufacturing techniques.Applications Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM

The HMC7885 is a 32 W gallium nitride (GaN), monolithicmicrowave integrated circuit (MMIC) power amplifier (PA)module that operates between 2 GHz and 6 GHz, and is providedin an 18-lead hermetically sealed module. The amplifier typicallyprovides 21 dB of small signal gain and 45 dBm of saturated radiofrequency (RF) output power. The amplifier draws 2200 mA ofquiescent current (IDD) from a 28 V dc supply. The RF input andoutput are dc blocked and matched to 50 ? for ease of use.Applications Test and measurement equipment Communications Electronic warfare (EW) Military Traveling wave tube (TWT) replacements SATCOM Commercial and military radars

The HMC797APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 22 GHz. The amplifier provides 15 dB of gain, +29 dBm of output power at 1 dB gain compression, +31 dBm of saturated output power, and 25% PAE while requiring 400 mA from a +10 V supply. With up to +41 dBm of output IP3, the HMC797APM5E is ideal for high linearity applications in military and space as well as test equipment where high order modulations are used. This versatile PA exhibits a positive gain slope from 2 to 20 GHz making it ideal for EW, ECM, Radar and test equipment applications. The HMC797APM5E amplifier I/Os are internally matched to 50 ? facilitating integration into mutli-chip-modules (MCMs), is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.Applications Test Instrumentation Military & Space Fiber Optics

The HMC802ALP3E is a broadband bidirectional 1-bitGaAs IC digital attenuator in a low cost leadless sur-face mount package. This single positive control linedigital attenuator utilizes off chip AC ground capac-itors for near DC operation, making it suitable for awide variety of RF and IF applications. Covering DCto 10 GHz, the insertion loss is less than 3 dB typicaland attenuation accuracy is excellent at ?0.6 dB typ-ical. The attenuator also features a high IIP3 of +55dBm. One TTL/CMOS control input is used to selectthe attenuation state and a single Vdd bias of +5V isrequired. Applications Test equipment and sensors ISM, MMDS, WLAN,?WiMAX, WiBro Microwave radio & VSAT Cellular infrastructure

The HMC8415LP6GE is a gallium nitride (GaN), power amplifier, delivering 40 W (46 dBm) with more than 37.5% power added efficiency (PAE) across a bandwidth of 9 GHz to 10.5 GHz.The HMC8415LP6GE is ideal for pulsed applications, such as wireless weather, marine, and military radar applications.APPLICATIONS Weather radars Marine radars Military radars

The HMC8500PM5E is a gallium nitride (GaN), broadbandpower amplifier delivering 10 W (40 dBm), typical, with up to 55% power added efficiency (PAE) across an instantaneousbandwidth of 0.01 GHz to 2.8 GHz, at an input power of 30 dBm. The typical gain flatness is 3 dB at small signal levels.The HMC8500PM5E is ideal for pulsed or continuous wave(CW) applications, such as wireless infrastructure, radars,public mobile radios, and general-purpose amplification.The HMC8500PM5E amplifier is externally tuned using lowcost, surface-mount components and is available in a compactLFCSP package.Note that, throughout this data sheet, multifunction pins, such as RFIN/VGG, are referred to either by the entire pin name or by a single function of the pin, for example, RFIN, when only that function is relevantAPPLICATIONS Extended battery operation for public mobile radios Power amplifier stage for wireless infrastructures Test and measurement equipment Commercial and military radars General-purpose transmitter amplification

The HMC951A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) downconverter in a RoHS compliant package that operates from 5.6 GHz to 8.6 GHz. This device provides a small signal conversion gain of 13 dB with a noise figure of 2 dB and an image rejection of 32 dBc. The HMC951A uses a low noise amplifier (LNA) followed by an image mixer that is driven by a local oscillator (LO) buffer amplifier. The image reject mixer eliminates the need for a filter following the LNA and removes thermal noise at the image frequency. The IF1 and IF2 mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. The HMC951A is a smaller alternative to hybrid style, single sideband (SSB) downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.The HMC951A is available in 4 mm ? 4 mm, 24-lead lead frame chip scale package (LFCSP) and operates over the ?40?C to +85?C temperature range. An evaluation board for the HMC951A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors

The HMC1119 is a broadband, highly accurate, 7-bit digitalattenuator, operating from 0.1 GHz to 6.0 GHz with 31.5 dBattenuation control range in 0.25 dB steps.The HMC1119 is implemented in a silicon process, offeringvery fast settling time, low power consumption, and high ESDrobustness. The device features safe state transitions and isoptimized for excellent step accuracy and high linearity overfrequency and temperature range. The RF input and output areinternally matched to 50 ? and do not require any externalmatching components. The design is bidirectional; therefore,the RF input and output are interchangeable.The HMC1119 has an on-chip regulator that can support a widesupply operating range from 3.3 V to 5.0 V with no performancechange in electrical characteristics. The HMC1119 incorporates adriver that supports serial (3-wire) and parallel controls of theattenuator.The HMC1119 comes in a RoHS-compliant, compact, 4 mm ?4 mm LFCSP package.A fully populated evaluation board is available.Applications Cellular infrastructure Microwave radios and very small aperture terminals (VSATs) Test equipment and sensors IF and RF designs

The ADF5610 allows implementation of fractional-N or Integer N phase-locked loop (PLL) frequency synthesizers when used with an external loop filter and an external reference source. The wideband microwave voltage controlled oscillator (VCO) design permits frequency operation from 7300 MHz to 14600 MHz at a single radio frequency (RF) output. A series of frequency dividers with a differential frequency output allows operation from 57 MHz to 14600 MHz. Analog and digital power supplies for the PLL circuitry range from 3.1 V to 3.5 V, and the VCO supplies are between 4.75 V and 5.25 V. The charge pump supply voltage can be extended up to 3.6 V for improved frequency band overlap and extended upper frequency range.The ADF5610 has an integrated VCO with a fundamental frequency of 3650 MHz to 7300 MHz. These frequencies are internally doubled and routed to the RFOUT pin. An additional differential output allows the doubled VCO frequency to be divided by 1, 2, 4, 8, 16, 32, 64, or 128, allowing the user to generate RF output frequencies as low as 57 MHz. A simple 3?wire serial port interface (SPI) provides control of all on-chip registers. To conserve power, this divider block can be disabled when not needed through the SPI interface. Likewise, the output power for both the single-ended output and the differential output are programmable via the VCO register settings. The ADF5610 also contains various power-down modes for the VCO circuitry and PLL circuitry.The integrated phase detector (PD) and delta-sigma (?-?) modulator, capable of operating at up to 100 MHz, permit wide loop bandwidths and fast frequency tuning with a typical spurious level of ?100 dBc.With phase noise levels from ?115 dBc/Hz at 7.3 GHz to ?109 dBc/Hz at 14.6 GHz, the ADF5610 is equipped to minimize blocker effects, and to improve receiver sensitivity and transmitter spectral purity. The low phase noise floor eliminates any contribution to modulator and mixer noise floor in transmitter applications.The ADF5610 is a PLL with integrated VCO. The device features an innovative programmable performance technology that enables the ADF5610 to tailor current consumption and corresponding noise performance to individual applications by selecting either a low current consumption mode or a high performance mode for improved phase noise performance.Additional features of the ADF5610 include approximately 3 dBof RFOUT gain control in 1.5 dB steps and 5 dB of control onthe differential port in approximately 2.5 dB steps. Finally, the ?-?modulator with exact frequency mode enables users to generateoutput frequencies with 0 Hz frequency error.APPLICATIONSMilitary and defenseTest equipmentClock generationWireless infrastructureSatellite and very small aperture terminal (VSAT)Microwave radio

The ADF5902 is a 24 GHz transmitter (Tx) monolithic microwaveintegrated circuit (MMIC) with an on-chip, 24 GHz voltagecontrolled oscillator (VCO). The VCO features a fractional-Nfrequency synthesizer with waveform generation capability withprogrammable grid array (PGA) and dual transmitter channelsfor radar systems. The on-chip, 24 GHz VCO generates the24 GHz signal for the two transmitter channels and the localoscillator (LO) output. Each transmitter channel contains apower control circuit. There is also an on-chip temperaturesensor.Control of all the on-chip registers is through a simple, 4-wireserial peripheral interface (SPI).The ADF5902 comes in a compact, 32-lead, 5 mm ? 5 mmLFCSP package. Applications Automotive radars Industrial radars Microwave radar sensors