The HMC833LP6GE is a low noise, wide band, Fractional-N Phase-Locked-Loop (PLL) that features an integrated Voltage Controlled Oscillator (VCO) with a fundamental frequency of 1500 MHz - 3000 MHz, and an integrated VCO Output Divider (divide by 1/2/4/6.../60/62) and doubler, that together allow the HMC833LP6GE to generate frequencies from 25 MHz to 6000 MHz. The integrated Phase Detector (PD) and delta-sigma modulator, capable of operating at up to 100 MHz, permit wider loop-bandwidths with excellent spectral performance.The HMC833LP6GE features industry leading phase noise and spurious performance, across all frequencies, that enable it to minimize blocker effects, and improve receiver sensitivity and transmitter spectral purity. The superior noise floor (< -170 dBc/Hz) makes the HMC833LP6GE an ideal source for a variety of applications - such as; LO for RF mixers, a clock source for high-frequency data-converters, or a tunable reference source for ultra-low spurious applications.Additional features of the HMC833LP6GE include RF output power control from 0 to 9 dB (3 dB steps), output Mute function, and a delta-sigma modulator Exact Frequency Mode which enables users to generate output frequencies with 0 Hz frequency error.Applications Cellular Infrastructure Microwave Radio WiMax, WiFi Communications Test Equipment CATV Equipment DDS Replacement Military Tunable Reference Source for Spurious- Free Performance

RF Modules DRO Module 8.0-8.3 GHz

RF Amplifier LNA w/Failsafe Bypass , 700-1200 MHz

The ADL8105 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), low noise wideband amplifier that operates from 5 GHz to 20 GHz.The ADL8105 provides a typical gain of 27 dB at 12 GHz to 17 GHz, a 1.8 dB typical noise figure from 12 GHz to 17 GHz, a typical output third-order intercept (OIP3) of 30.5 dBm at 12 GHz to 17 GHz, and a saturated output power (PSAT) of up to 20.5 dBm, requiring only 90 mA from a 5 V supply voltage. The power dissipation can be lowered at the expense of OIP3 and output power (POUT). The ADL8105 also features inputs and outputs that are internally matched to 50 Ω. The RFIN and RFOUT pins are internally ac-coupled, and the bias inductor is also integrated, making it ideal for surface-mounted technology (SMT)-based, high capacity microwave radio applications.The ADL8105 is housed in an RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP package.APPLICATIONSTelecommunicationsSatellite communicationsMilitary radarWeather radarElectronic warfareInstrumentation

The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 54 GHz. The amplifier provides a gain of 17.5 dB, an output power for 1 dB compression (OP1dB) of 28 dBm, and a typical output third-order intercept (OIP3) of 34.5 dBm at 20 GHz to 35 GHz. The ADPA7009-2 requires 850 mA from a 5 V supply voltage (VDDx). The RF input and outputs are internally matched and DC-blocked for ease of integration into higher level assemblies. Most of the typically required external passive components for operation (AC coupling capacitors and power supply decoupling capacitors) are integrated, which facilitates a small, compact printed circuit board (PCB) footprint. The ADPA7009-2 is available in a 5.00 mm × 5.00 mm, 24-terminal chip array, small outline, no lead cavity [LGA_CAV] package.APPLICATIONS Military and space Test instrumentation

RF AMPLIFIER, LFCSP-EP, -55 TO 85DEG C;

RF MIXER, 2 CHANNEL, 26.5GHZ, LCC-EP-24;

DIGITAL ATTENUATOR, 0-6GHZ, QFN-EP;

RF Mixer

GaAs MMIC I/Q Receiver Chip, 21 - 25 GHz Features: Conversion Gain: 11 dB Image Rejection: 24 dB 2 LO to RF Isolation: 40 dB Noise Figure: 3 dB Input IP3: +5 dBm Die Size: 2.33 × 2.51 × 0.10 mm