The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. No external matching is required to achieve full band operation. Additionally, no external inductor is required to bias the amplifier. Also, dc blocking capacitors for the RFIN and RFOUT pins are integrated into the HMC8205BF10.The HMC8205BF10 is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.The HMC8205BF10 amplifier is a 10-lead ceramic leaded chip carrier (LDCC).The HMC8205BCHIPS is a gallium nitride (GaN), broadbandpower amplifier that delivers 45.5 dBm (35 W) with 40% poweradded efficiency (PAE) across an instantaneous bandwidth of0.4 GHz to 6 GHz. No external matching is required to achievefull band operation. No external inductor is required to bias theamplifier. In addition, dc blocking capacitors for the RFIN andRFOUT pins are integrated into the HMC8205BCHIPS.The HMC8205BCHIPS is ideal for pulsed or continuous wave(CW) applications, such as military jammers, wirelessinfrastructure, radar, and general-purpose amplification.APPLICATIONS Military jammers Commercial and military radar Power amplifier stage for wireless infrastructure? Test and measurement equipment

The HMC270AMS8GE are broad-band non-reflectiveGaAs SPDT switches in 8 lead MSOP grounded basesurface mount plastic packages. Covering DC to 8GHz, the switch offers excellent isolation from 70 to35 dB. The negative control voltage of -5 volts allowsoperation down to DC. If positive control is requiredalong with high isolation, see the DC to 3.5 GHzHMC284AMS8GE non-reflective SPDT.APPLICATIONSThe HMC270AMS8GE is ideal for DC - 8.0 GHz applications: CATV MMDS and wireless LAN Wireless local loop

The HMC659LC5 is a GaAs MMIC PHEMT Distributed Power Amplifier which is housed in a leadless 5x5 mm RoHS compliant ceramic SMT package operating between DC and 15 GHz. The amplifier provides 19 dB of gain, +35 dBm output IP3 and +27.5 dBm of output power at 1 dB gain compression, while requiring 300mA from a +8V supply.Gain flatness is excellent at ±0.7 dB from DC - 15 GHz making the HMC659LC5 ideal for EW, ECM, Radar and test equipment applications. The HMC659LC5 amplifier I/Os are internally matched to 50 ohms with no external components. The HMC659LC5 is compatible with high volume surface mount manufacturing techniques.Applications Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics

The LT5506 is a 40MHz to 500MHz monolithic integrated quadrature demodulator with variable gain amplifier (VGA), designed for low voltage operation. It supports standards that use a linear modulation format. The chip consists of a VGA, quadrature down-converting mixers and lowpass noise filters. The LO port consists of a divide-by-two stage and LO buffers. The IC provides all building blocks for IF down-conversion to I and Q baseband signals with a single supply voltage of 1.8V to 5.25V. The VGA gain has a linear-in- dB relationship to the control input voltage. Hard-clipping amplifiers at the mixer outputs reduce the recovery time from a signal overload condition. The lowpass filters reduce the out-of-band noise and spurious frequency components. The cut-off frequency of the noise filters is approximately 8.8MHz. The external 2xLO frequency is required to be twice the IF input frequency for the mixers. The standby mode provides reduced supply current and fast transient response into the normal operating mode when the I/Q outputs are AC-coupled to a baseband chip.Applications IEEE802.11 High Speed Wireless LAN Wireless Local Loop

The HMC939ALP4E is a 5-bit digital attenuator with a 31 dBattenuation control range in 1 dB steps.The HMC939ALP4E offers optimum insertion loss, attenuationaccuracy, and input linearity over the specified frequency rangefrom 100 MHz to 33 GHz.The HMC939ALP4E requires dual supply voltages, VDD = +5 Vand VSS = −5 V, and provides CMOS-/TTL-compatible parallelcontrol interface by incorporating an on-chip driver.The HMC939ALP4E comes in a RoHS compliant, compact,4 mm × 4 mm LFCSP package. See HMC939A-DIE for the dieversion of HMC939ALP4E.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

RF Vector Modulator 1.5 GHz TO 2.4 GHz Features: Cartesian amplitude and phase modulation 1.5 GHz to 2.4 GHz frequency range Continuous magnitude control of −4.5 dB to −34.5 dB Continuous phase control of 0° to 360° Output third-order intercept 17.5 dBm Output 1 dB compression point 8.5 dBm Output noise floor −150.5 dBm/Hz at full gain Adjustable modulation bandwidth up to 230 MHz Fast output power disable 4.75 V to 5.25 V single-supply voltage 

The LTC5507 is an RF power detector for applications operating from 100kHz to 1000MHz. The input frequency range is determined by an external capacitor. A temperature-compensated Schottky diode peak detector and buffer amplifier are combined in a small 6-pin ThinSOT package.The RF input voltage is peak detected using an on-chip Schottky diode and external capacitor. The detected voltage is buffered and supplied to the VOUT pin. A power saving shutdown mode reduces supply current to less than 2?A.Applications Wireless Transceivers Wireless and Cable Infrastructure RF Power Alarm Envelope Detector

The ADRF5025 is a reflective single-pole double-throw (SPDT) switch, manufactured in silicon process.This switch operates from 9 kHz to 44 GHz with better than 1.6 dB of insertion loss and 35 dB of isolation. The ADRF5025 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.The ADRF5025 draws a low current of 14 ?A on the positive supply of +3.3 V and 120 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5025 is pin compatible with the ADRF5024, low frequency cutoff version, which operates from 100 MHz to 44 GHz.The ADRF5025 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.The ADRF5025 comes in a 2.25 mm ? 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

EVALUATION BOARD 2X FREQUENCY MULTIPLIER; Silicon Manufacturer:Analog Devices; Silicon Core Number:HMC561; Kit Application Type:RF / IF; Kit Contents:Eval Board HMC561; Product Range:- ;RoHS Compliant: Yes

Attenuators Fixed Passive SMT atten, DC - 25 GHz