The HMC463 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and 19 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 10 dB typical. Gain flatness is excellent at ±0.15 dB from 6 - 18 GHz making the HMC463 ideal for EW, ECM and RADAR applications. The HMC463 amplifiercan easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).Applications Telecom Infrastructure  Microwave Radio & VSAT  Military & Space  Test Instrumentation  Fiber Optics

The HMC474 devices are general-purpose SiGe, Heterojunction Bipolar transistor (HBT), gain block MMIC, SMT amplifiers covering dc to 6 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages with up to 10 dBm output power. The HMC474 devices offer 15 dB or 15.5 dB of gain with 20 dBm or 22 dBm output IP3 at 850 MHz while requiring only 25 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G WiBro/WiMAX/4G Fixed wireless and WLAN CATV, cable modem, and direct broadcast (DBS) Microwave radio and test equipment 

The HMC479 devices are SiGe, heterojunction bipolar transistor (HBT) gain block MMIC, SMT amplifiers covering dc to 5 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages as well as LO or PA drivers with up to 21 dBm output power. The HMC479 amplifiers offer 15 dB of gain with a 33 dBm or 34 dBm output IP3 at 850 MHz, while requiring only 72 mA from a single positive supply. The Darlington feedback topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature, while requiring a minimal number of external bias components.Applications Cellular/PCS/3G  Fixed wireless and WLAN  CATV, cable modem, and direct broadcast satellite (DBS)  Microwave radio and test equipment

The HMC764LP6CE is a fully functioned Fractional-N Phase-Locked-Loop (PLL) with an Integrated Voltage Controlled Oscillator (VCO). The input reference frequency range is 100 kHz to 220 MHz while the advanced delta-sigma modulator design in the fractional PLL allows both ultra-fine step sizes and very low spurious products. The highly integrated structure provides excellent phase noise performance over temperature, shock and process. The HMC764LP6CE is packaged in a leadless QFN 6 x 6 mm surface mount package. The output power is 15 dBm typical, making the HMC764LP6CE ideal for driving the LO port of many of Hittite’s Hi Linearity and I/Q mixer products.For theory of operation and register map refer to the 'PLLs w/ Integrated VCO - Microwave VCOs' Operating Guide.Applications VSAT Radio Point-to-Point / Multi-Point Radio Test Equipment & Industrial Control Military End-Use Phased Array Applications

The HMC770LP4BE is a GaAs pHEMT Differential Gain Block MMIC amplifier covering 40 MHz to 1 GHz and packaged in a 4x4 mm plastic QFN SMT package. This versatile amplifier can be used as a cascadable IF or RF gain stage in both 50 Ohm and 75 Ohm applications. The HMC770LP4BE delivers 16 dB gain, and +40 dBm output, with only 2.5 dB noise figure.Differential I/Os make this amplifier ideal for transimpedance and SAW filter applications, and in transceivers where the IF path must be handled differentially for improved noise performance. Evaluation PCBs are all available with either SMA (50Ω) or Type F (75Ω) connectors.Applications Cellular / PCS / 3G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment IF & RF Applications

The HMC207AS8E is a miniature double- balanced mixer in an 8 lead plastic surface mount Small Outline IC (SOIC) package. This passive MMIC mixer is constructed of GaAs Schottky diodes and novel planar transformer baluns on the chip. The device can be used as an upconverter, downconverter, biphase modulator (de)modulator, or phase comparator. The consistent MMIC performance will improve system operation and assure regulatory compliance. The high LO suppression of 45 to 50 dB yields excellent carrier suppression for modulator applications.Applications Base Stations  Cable Modems  Portable Wireless

The HMC207AS8E is a miniature double- balanced mixer in an 8 lead plastic surface mount Small Outline IC (SOIC) package. This passive MMIC mixer is constructed of GaAs Schottky diodes and novel planar transformer baluns on the chip. The device can be used as an upconverter, downconverter, biphase modulator (de)modulator, or phase comparator. The consistent MMIC performance will improve system operation and assure regulatory compliance. The high LO suppression of 45 to 50 dB yields excellent carrier suppression for modulator applications.Applications Base Stations  Cable Modems  Portable Wireless

The HMC264 chip is a sub-harmonically pumped (x2) MMIC mixer with an integrated LO amplifier which can be used as an upconverter or downconverter. The chip utilizes a GaAs PHEMT technology that results in a small overall chip area of 1.28mm². The 2LO to RF isolation is excellent eliminating the need for additional filtering. The LO amplifier is a single bias (+3V to +4V) two stage design with only -4 dBm nominal drive requirement. All data is measured with the chip in a 50Ω test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils).APPLICATIONS Microwave Point-to-Point Radios LMDS SATCOM

The HMC311SC70(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT DC to 8 GHz amplifier. Packaged in an industry standard SC70, the amplifier can be used as either a cascadable 50 Ohm gain stage or to drive the LO port of HMC mixers with up to +15 dBm output power. The HMC311SC70(E) offers 15 dB of gain and an output IP3 of +30 dBm while requiring only 54 mA from a +5V supply. The Darlington topology results in reduced sensitivity to normal process variations, and yields excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular / PCS / 3G WiBro / WiMAX / 4G Fixed Wireless & WLAN CATV, Cable Modem & DBS Microwave Radio & Test Equipment

The HMC342 chip is a GaAs MMIC Low Noise Amplifier (LNA) which covers the frequency range of 13 to 25 GHz. The chip can easily be integrated into Multi-Chip Modules (MCMs) due to its small (2.14 mm²) size. The chip utilizes a GaAs PHEMT process offering 20 dB gain from a single bias supply of +3V @ 41 mA with a noise figure of 3.5 dB. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils).Applications Microwave Point-to-Point Radios  Millimeterwave Point-to-Point Radios  VSAT & SATCOM