18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm (>1 W), MMIC Power Amplifier Features:ADPA7005AEHZ Output P1dB: up to 31 dBm typical PSAT: up to 32 dBm typical Gain: up to 15.5 dB typical Output IP3: up to 42.5 dBm typical Supply voltage: 5 V at 1400 mA 50 matched input/output 18-terminal, 7 mm × 7 mm LCC_HS package Integrated power detectorADPA7005CHIP Output P1dB: 31 dBm typical at 20 GHz to 34 GHz PSAT: 32 dBm typical at 20 GHz to 34 GHz Gain: 17 dB typical at 20 GHz to 34 GHz Output IP3: 41 dBm typical at 20 GHz to 34 GHz Supply voltage: 5 V at 1200 mA maximum 50 Ω matched input/output Die size: 3.75 mm × 3.47 mm × 0.1 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

0.5 dB LSB, 6-Bit, Silicon Digital Attenuator, 100 MHz to 40 GHz Features:Ultrawideband frequency range: 100 MHz to 40 GHz Attenuation range: 0.5 dB steps to 31.5 dB Low insertion loss with impedance match 2.1 dB up to 18 GHz 2.9 dB up to 26 GHz 4.8 dB up to 40 GHz Attenuation accuracy with impedance match ±(0.10 + 1.0% of attenuation state) up to 18 GHz ±(0.15 + 0.8% of attenuation state) up to 26 GHz ±(0.35 + 2.5% of attenuation state) up to 40 GHz Typical step error with impedance match ±0.18 dB up to 18 GHz ±0.23 dB up to 26 GHz ±0.51 dB up to 40 GHz High input linearity P0.1dB insertion loss state: 30 dBm P0.1dB other attenuation states: 27 dBm IP3: 50 dBm typical High RF input power handling: 27 dBm average, 30 dBm peak Tight distribution in relative phase No low frequency spurious signals SPI and parallel mode control, CMOS/LVTTL compatible RF settling time (0.1 dB of final RF output): 250 ns 24-terminal, 4 mm × 4 mm LGA package Pin compatible with ADRF5720, low frequency cutoff version

2 dB LSB, 4-Bit, Silicon Digital Attenuator, 100 MHz to 40 GHz Features: Ultrawideband frequency range: 100 MHz to 40 GHz Attenuation range: 2 dB steps to 30 dB Low insertion loss 1.7 dB to 18 GHz 2.2 dB to 26 GHz 3.5 dB to 40 GHz Attenuation accuracy ±(0.1 + 2.0%) of attenuation state up to 18 GHz ±(0.2 + 2.5%) of attenuation state up to 26 GHz ±(0.5 + 10.0%) of attenuation state up to 40 GHz High RF input power handling: 26 dBm average, 30 dBm peak Tight distribution in relative phase Typical step error ±0.15 dB to 18 GHz ±0.20 dB to 26 GHz ±0.60 dB to 40 GHz High input linearity P0.1dB insertion loss state: 30 dBm P0.1dB other attenuation states: 26 dBm IP3: 50 dBm typical No low frequency spurious signals SPI and parallel mode control, CMOS/LVTTL compatible RF amplitude settling time (0.1 dB of final RF output): 230 ns 2.5 mm × 2.5 mm, 16-terminal LGA package Pin compatible with ADRF5721, low frequency cutoff version

10 GHz to 40 GHz, 1:4 Channel, 4 Frequency Multiplier/Filter Features: 4 input frequency multiplier with programmable harmonic filter Quad Differential Output PAs with independent Enable Control Input Frequency Range: 2.5 GHz to 10 GHz Output Frequency Range: 10 GHz to 40 GHz Input power: 20 dBm (50 ) Output power: 5 dBm differential (100 ) Harmonic rejection: 20 dBc to 40 dBc at all frequencies 3-Wire or 4-Wire SPI Control of all functions On-Chip Programmable State Machines for fast multiplier/filter and transmitter switching and control On-chip temperature sensor, output power detectors, and ADC DC power: 450 mW (2.5 V supply) 6 mm 6 mm, 40-terminal LGA package

2 GHz to 18 GHz, Digitally Tunable, High-Pass and Low-Pass Filter Features: Digitally tunable, multioctave, high-pass and low-pass tuning Independent 3 dB frequency control for up to 4 GHz of bandwidth Optimal wideband rejection: 35 dB Single chip replacement for discrete filter banks Compact 9 mm × 9 mm, 56-terminal LGA packageENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard Military temperature range of −55°C to +105°C Controlled manufacturing baseline One assembly and test site One fabrication site Production change notification Qualification data available on request V62/21604

Dual Narrow/Wideband RF Transceiver Features: 2 2 highly integrated transceiver Frequency range of 30 MHz to 6000 MHz Transmitter and receiver bandwidth from 12 kHz to 40 MHz Two fully integrated, fractional-N, RF synthesizers LVDS and CMOS synchronous serial data interface options Low power monitor and sleep modes Multichip synchronization capabilities Fast frequency hopping Dynamic profile switching for dynamic data rates and sample rates Fully programmable via a 4-wire SPI 12 mm 12 mm, 196-ball CSP_BGA

Integrated Dual RF Receiver Features: Dual receivers Maximum Receiver BW: 200 MHz Fully integrated, fractional-N, RF synthesizers Fully integrated clock synthesizer Multichip phase synchronization for RF LO and baseband clocks JESD204B datapath interface Tuneable range: 75 MHz to 6000 MHz