Integrated, Dual RF Transceiver with Observation Path Features: Dual differential Tx Dual differential Rx Observation receiver with 2 inputs Fully integrated, ultralow power DPD actuator and adaptation engine for PA linearization Sniffer receiver with 3 inputs Tunable range: 300 MHz to 6000 MHz Linearization signal BW to 40 MHz Tx synthesis BW to 250 MHz Rx BW: 8 MHz to 100 MHz Supports FDD and TDD operation Fully integrated independent fractional-N RF synthesizers for Tx, Rx, ORx, and clock generation JESD204B digital interface

10 GHz to 40 GHz, 1:4 Channel, 4 Frequency Multiplier/Filter Features: 4 input frequency multiplier with programmable harmonic filter Quad Differential Output PAs with independent Enable Control Input Frequency Range: 2.5 GHz to 10 GHz Output Frequency Range: 10 GHz to 40 GHz Input power: 20 dBm (50 ) Output power: 5 dBm differential (100 ) Harmonic rejection: 20 dBc to 40 dBc at all frequencies 3-Wire or 4-Wire SPI Control of all functions On-Chip Programmable State Machines for fast multiplier/filter and transmitter switching and control On-chip temperature sensor, output power detectors, and ADC DC power: 450 mW (2.5 V supply) 6 mm 6 mm, 40-terminal LGA package

Phase Detector / PLL Frequency Synthesizer Features: 400 MHz bandwidth 2.7 to 3.3 V power supply Separate charge pump supply (VP) allows extended tuning voltage in 3 V systems Programmable charge pump currents 3-wire serial interface Analog and digital lock detect Hardware and software power-down mode 104  MHz phase detectorADF4002-EP supports defense and aerospace applications (AQEC standard) Download ADF4002-EP data sheet (pdf) Military temperature range: −55°C to +125°C Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/11607 DSCC Drawing Number

400 MHz TO 4000 MHz Low Noise Amplifier Features: Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Requires few external components Integrated active bias control circuit Integrated dc blocking capacitors Adjustable bias for low power applications Single-supply operation from 3 V to 5 V Gain of 20.8 dB at 900 MHz OIP3 of 37.0 dBm at 900 MHz P1dB of 21.8 dBm at 900 MHz Small footprint LFCSP Pin-compatible version with 21.5 dB gain available

21.2 GHz to 23.6 GHz, Low Noise Amplifier Features: Frequency range: 21.2 GHz to 23.6 GHz Typical gain of >22.5 dB Low noise input Noise figure 3.3 dB typical at 21.2 GHz 3.4 dB typical at 23.6 GHz High linearity input ≥1.0 dBm typical input third-order intercept (IIP3) −8 dBm input 1 dB compression point (P1dB) at 23.6 GHz Matched 50 Ω single-ended input Matched 100 Ω differential outputs 8-lead, 2.00 mm × 2.00 mm LFCSP microwave packaging

2 GHz to 18 GHz, Digitally Tunable, High-Pass and Low-Pass Filter Features: Digitally tunable, multioctave, high-pass and low-pass tuning Independent 3 dB frequency control for up to 4 GHz of bandwidth Optimal wideband rejection: 35 dB Single chip replacement for discrete filter banks Compact 9 mm × 9 mm, 56-terminal LGA packageENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard Military temperature range of −55°C to +105°C Controlled manufacturing baseline One assembly and test site One fabrication site Production change notification Qualification data available on request V62/21604

46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier Features: Frequency range: 2.7 GHz to 3.5 GHz POUT: 46 dBm typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Power gain: 25 dB typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Small signal gain: 34.5 dB typical at 2.7 GHz to 3.1 GHz PAE: 56% typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Supply voltage: VDD = 50 V at IDQ = 300 mA with 10% duty cycle 32-lead, 5 mm × 5 mm LFCSP_CAV package

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

RF Power Detector with Buffered Output and >40dB Dynamic Range Features: Internal Schottky Diode RF Detector with Two Input Power Ranges: LTC5505-1, –28dBm to 18dBm LTC5505-2, –32dBm to 12dBm Wide Input Frequency Range: 300MHz to 3GHz (LTC5505-1); 300MHz to 3.5GHz (LTC5505-2) Temperature Compensated Buffered Detector Output Wide VCC Range of 2.7V to 6V Low Operating Current: 0.5mA Low Shutdown Current: <2µA Low Profile (1mm) ThinSOT™ Package