RF Power Detector with Buffered Output and >40dB Dynamic Range Features: Internal Schottky Diode RF Detector with Two Input Power Ranges: LTC5505-1, –28dBm to 18dBm LTC5505-2, –32dBm to 12dBm Wide Input Frequency Range: 300MHz to 3GHz (LTC5505-1); 300MHz to 3.5GHz (LTC5505-2) Temperature Compensated Buffered Detector Output Wide VCC Range of 2.7V to 6V Low Operating Current: 0.5mA Low Shutdown Current: <2µA Low Profile (1mm) ThinSOT™ Package

2 GHz to 18 GHz, Digitally Tunable, High-Pass and Low-Pass Filter Features: Digitally tunable, multioctave, high-pass and low-pass tuning Independent 3 dB frequency control for up to 4 GHz of bandwidth Optimal wideband rejection: 35 dB Single chip replacement for discrete filter banks Compact 9 mm × 9 mm, 56-terminal LGA packageENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard Military temperature range of −55°C to +105°C Controlled manufacturing baseline One assembly and test site One fabrication site Production change notification Qualification data available on request V62/21604

46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier Features: Frequency range: 2.7 GHz to 3.5 GHz POUT: 46 dBm typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Power gain: 25 dB typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Small signal gain: 34.5 dB typical at 2.7 GHz to 3.1 GHz PAE: 56% typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Supply voltage: VDD = 50 V at IDQ = 300 mA with 10% duty cycle 32-lead, 5 mm × 5 mm LFCSP_CAV package

2 GHz Ultralow Distortion Differential RF/IF Amplifier Features: −3 dB bandwidth of 2.2 GHz (AV = +10 dB) Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB Single resistor and capacitor distortion adjust Input resistance: 3 kΩ, independent of gain (AV) Differential or single-ended input to differential output Low noise input stage: 2.7 nV/√Hz RTI at AV = 10 dB Low broadband distortion 10 MHz: −86 dBc HD2, −82 dBc HD3 70 MHz: −84 dBc HD2, −82 dBc HD3 190 MHz: −81 dBc HD2, −87 dBc HD3 OIP3 of 41 dBm at 150 MHz Slew rate: 8 V/ns Fast settling and overdrive recovery of <2 ns Single-supply operation: 3 V to 5.5 V Low power dissipation: 37 mA typical at 5 V Power-down capability: 5 mA at 5 V Fabricated using the high speed XFCB3 SiGe process

Phase Detector / PLL Frequency Synthesizer Features: 400 MHz bandwidth 2.7 to 3.3 V power supply Separate charge pump supply (VP) allows extended tuning voltage in 3 V systems Programmable charge pump currents 3-wire serial interface Analog and digital lock detect Hardware and software power-down mode 104  MHz phase detectorADF4002-EP supports defense and aerospace applications (AQEC standard) Download ADF4002-EP data sheet (pdf) Military temperature range: −55°C to +125°C Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/11607 DSCC Drawing Number

400 MHz TO 4000 MHz Low Noise Amplifier Features: Operation from 400 MHz to 4000 MHz Noise figure of 0.8 dB at 900 MHz Requires few external components Integrated active bias control circuit Integrated dc blocking capacitors Adjustable bias for low power applications Single-supply operation from 3 V to 5 V Gain of 20.8 dB at 900 MHz OIP3 of 37.0 dBm at 900 MHz P1dB of 21.8 dBm at 900 MHz Small footprint LFCSP Pin-compatible version with 21.5 dB gain available

21.2 GHz to 23.6 GHz, Low Noise Amplifier Features: Frequency range: 21.2 GHz to 23.6 GHz Typical gain of >22.5 dB Low noise input Noise figure 3.3 dB typical at 21.2 GHz 3.4 dB typical at 23.6 GHz High linearity input ≥1.0 dBm typical input third-order intercept (IIP3) −8 dBm input 1 dB compression point (P1dB) at 23.6 GHz Matched 50 Ω single-ended input Matched 100 Ω differential outputs 8-lead, 2.00 mm × 2.00 mm LFCSP microwave packaging

HBT Vector Modulator SMT, 700 - 1000 MHz Features: Continuous Phase Control: 360° Continuous Gain Control: 40 dB Low Output Noise Floor: -162 dBm/Hz High Input IP3: +34 dBm 16 Lead 3×3mm SMT Package: 9mm2

LNA with Failsafe Bypass Mode SMT, 1700 - 2200 MHz Features: Noise Figure: 1.4 dB Output IP3: +29 dBm Gain: 17 dB Failsafe Operation: Bypass is enabled when LNA is unpowered Single Supply: +3V or +5V 16 Lead 3x3mm SMT Package: 9mm²

GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz Features: 32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHz P1dB compression output power: 31.5 dBm typical High output third-order intercept (IP3): 40 dBm typical High gain: 24 dB typical 50 Ω matched input/output Ceramic, 6 mm × 6 mm, high frequency, air cavity package