The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

LF2.7 GHz RF/IF Gain and Phase Detector Features: Measures Gain/Loss and Phase up to 2.7 GHz Dual Demodulating Log Amps and Phase Detector Input Range –60 dBm to 0 dBm in a 50 Ω System Accurate Gain Measurement Scaling (30 mV/dB) Typical Nonlinearity < 0.5 dB Accurate Phase Measurement Scaling (10 mV/Degree) Typical Nonlinearity < 1 Degree Measurement/Controller/Level Comparator Modes Operates from Supply Voltages of 2.7 V–5.5 V Stable 1.8 V Reference Voltage Output Small Signal Envelope Bandwidth from DC to 30 MHz

RF Power Detector with Buffered Output and >40dB Dynamic Range Features: Internal Schottky Diode RF Detector with Two Input Power Ranges: LTC5505-1, –28dBm to 18dBm LTC5505-2, –32dBm to 12dBm Wide Input Frequency Range: 300MHz to 3GHz (LTC5505-1); 300MHz to 3.5GHz (LTC5505-2) Temperature Compensated Buffered Detector Output Wide VCC Range of 2.7V to 6V Low Operating Current: 0.5mA Low Shutdown Current: <2µA Low Profile (1mm) ThinSOT™ Package

RF Power Detector with Buffered Output and >40dB Dynamic Range Features: Internal Schottky Diode RF Detector with Two Input Power Ranges: LTC5505-1, –28dBm to 18dBm LTC5505-2, –32dBm to 12dBm Wide Input Frequency Range: 300MHz to 3GHz (LTC5505-1); 300MHz to 3.5GHz (LTC5505-2) Temperature Compensated Buffered Detector Output Wide VCC Range of 2.7V to 6V Low Operating Current: 0.5mA Low Shutdown Current: <2µA Low Profile (1mm) ThinSOT™ Package

1kHz-3GHz High Signal Level Active Mixer Features: Broadband RF, LO and IF Operation High Input IP3: >20dBm from 30MHz to 900MHz +17dBm at 1900MHz Typical Conversion Gain: 1dB SSB Noise Figure: 11dB at 900MHz 14dB at 1900MHz Integrated LO Buffer: Insensitive to LO Drive Level Single-Ended or Differential LO Drive High LO-RF Isolation Enable Function 4.5V to 5.25V Supply Voltage Range 4mm x 4mm QFN Package

1kHz-3GHz High Signal Level Active Mixer Features: Broadband RF, LO and IF Operation High Input IP3: >20dBm from 30MHz to 900MHz +17dBm at 1900MHz Typical Conversion Gain: 1dB SSB Noise Figure: 11dB at 900MHz 14dB at 1900MHz Integrated LO Buffer: Insensitive to LO Drive Level Single-Ended or Differential LO Drive High LO-RF Isolation Enable Function 4.5V to 5.25V Supply Voltage Range 4mm x 4mm QFN Package

Very High Linearity Active Mixer Features: Wideband Output Frequency Range to 3.7GHz +24.2dBm IIP3 at 1.95GHz RF Output Low LO Leakage: –42dBm Integrated LO Buffer: Low LO Drive Level Single-Ended LO Drive Wide Single Supply Range: 3.15V to 5.25V Double-Balanced Active Mixer Shutdown Function 16-Lead (4mm × 4mm) QFN Package

40MHz to 900MHz Quadrature Demodulator Features: RF Input Frequency Range: 40MHz to 900MHz High IIP3: 21dBm at 800MHz High IIP2: 58dBm at 800MHz I/Q Gain Mismatch: 0.3dB Max I/Q Phase Mismatch: 0.7° Noise Figure: 12.4dB at 800MHz Conversion Gain: 3.3dB at 800MHz Baseband Bandwidth: 130MHz Single Ended, 50 Matched 2XLO Input Shutdown Mode 16-Lead QFN (4mm × 4mm) Package with Exposed Pad

1.5GHz - 2.4GHz High Linearity Direct Quadrature Modulator Features: High Input Impedance Version of the LT5528 Direct Conversion to 1.5GHz - 2.4GHz High OIP3: 22.8dBm at 2GHz Low Output Noise Floor at 20MHz Offset: No RF: -158.2dBm/Hz POUT = 4dBm: -152.5dBm/Hz 4-Ch W-CDMA ACPR: -64dBc at 2.14GHz Integrated LO Buffer and LO Quadrature Phase Generator 50Ω AC-Coupled Single-Ended LO and RF Ports Low Carrier Leakage: -49dBm at 2GHz High Image Rejection: 40dB at 2GHz 16-Lead QFN 4mm × 4mm Package

>10 W (42 dBm), 2.7 GHz to 3.8 GHz, GaN Power Amplifier Features: High small signal gain: 34.5 dB typical High output power: 42 dBm typical at PIN = 18 dBm High PAE: 55% typical at PIN = 18 dBm Frequency range: 2.7 GHz to 3.8 GHz Supply voltage: VDD = 28 V at a quiescent current of 150 mA 5 mm × 5 mm, 32-lead LFCSP_CAV package