HMC5927LS6 - Amplifier Evaluation Board

RF Amplifier lo Noise amp SMT, 350 - 550 MHz

Low Noise Amplifier Chip, 7.0 - 13.5 GHz Features: Noise Figure: 1.8 dB Gain: 17 dB OIP3: 24 dBm Single Supply: +3V @ 51 mA 50 Ohm Matched Input/Output Small Size: 1.96 x 0.98 x 0.10 mm

0.25dB LSB 7-Bit Digital Attenuator SMT, 10 - 300 MHz Features: 0.25 dB LSB Steps to 31.75 dB Power-Up State Selection High Input IP3: +40 dBm TTL/CMOS Compatible, Serial Control Excellent State & Step Accuracy ±0.25 dB Single +5V Supply 16 Lead 3×3mm SMT Package: 9mm2

IC Power Metering BIPOLAR TSSOP 8PIN PLASTIC

Phase Locked Loops - PLL External L for Lower Frequencies

GaAs InGaP HBT MMIC Ultra Low Phase Noise, Distributed Amplifier, 2 - 18 GHz Features: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz P1dB Output Power: +15 dBm Gain: 14 dB Output IP3: +27 dBm Supply Voltage: +5V @ 64 mA 50 Ω Matched Input/Output Die Size: 2.80 x 1.73 x 0.1 mm

RF Development Tools LTC5535ES6 - 7GHz RF Detector With Wide

RF Amplifier lo Noise amp SMT 1.2 - 3.0 GHz

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm (>1 W), MMIC Power Amplifier Features:ADPA7005AEHZ Output P1dB: up to 31 dBm typical PSAT: up to 32 dBm typical Gain: up to 15.5 dB typical Output IP3: up to 42.5 dBm typical Supply voltage: 5 V at 1400 mA 50 matched input/output 18-terminal, 7 mm × 7 mm LCC_HS package Integrated power detectorADPA7005CHIP Output P1dB: 31 dBm typical at 20 GHz to 34 GHz PSAT: 32 dBm typical at 20 GHz to 34 GHz Gain: 17 dB typical at 20 GHz to 34 GHz Output IP3: 41 dBm typical at 20 GHz to 34 GHz Supply voltage: 5 V at 1200 mA maximum 50 Ω matched input/output Die size: 3.75 mm × 3.47 mm × 0.1 mm