The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

Attenuators 1 dB LSB 5Bit dig atten Chip 0.1-40 GHz

EVALUATION BOARD 2X FREQUENCY MULTIPLIER; Silicon Manufacturer:Analog Devices; Silicon Core Number:HMC561; Kit Application Type:RF / IF; Kit Contents:Eval Board HMC561; Product Range:- ;RoHS Compliant: Yes

EVALUATION PCB ASSEMBLY

Interger

Phase Locked Loops - PLL Phase-Locked Oscillator , 14.7-15.4GHz

Clock Generator, 155.52MHz, ECL, PDSO16

High Performance, Low Power, ISM Band FSK/GFSK/MSK/GMSK Transceiver IC

2.9 GHz Ultralow Distortion RF/IF Differential Amplifier Features: −3 dB bandwidth of 2.9 GHz (AV = 6 dB) Low supply current: 40 mA Pin-strappable gain adjust: 6 dB, 12 dB, 15.5 dB Differential or single-ended input to differential output Low noise input stage: 2.1 nV/√Hz RTI at AV = 12 dB Low broadband distortion (AV = 6 dB) 10 MHz: −94 dBc HD2, −87 dBc HD3 70 MHz: −98 dBc HD2, −87 dBc HD3 140 MHz: −95 dBc HD2, −87 dBc HD3 250 MHz: −80 dBc HD2, −73 dBc HD3 IMD3s of −86 dBc at 250 MHz center Slew rate: 9.8 V/ns Fast settling of 2 ns and overdrive recovery of 3 ns Single-supply operation: 3 V to 3.6 V Power-down control Fabricated using the high speed XFCB3 SiGe process

20 MHz to 6 GHz RF/IF Gain Block, Fixed Gain of 15 dB Features: Fixed gain of 15 dB  Operation up to 6 GHz  Input/output internally matched to 50 Ω  Integrated bias control circuit  Output IP3 44 dBm at 500 MHz 40 dBm at 900 MHz  Output 1 dB compression: 19.7 dBm at 900 MHz  Noise figure of 3.5 dB at 900 MHz  Single 5 V power supply  Small footprint 8-lead LFCSP  Pin compatible with 20 dB gain ADL5542  1 kV ESD (Class 1C)