The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

RF Amplifier LNA w/Failsafe Bypass , 700-1200 MHz

RF Mixer Fundamental mix SMT, 6 - 26 GHz

Phase Locked Loops - PLL Synth

Attenuators 4-Bit dig S/P Control Atten. , DC-6GHz

Attenuators 10dB LSB 1-Bit dig atten SMT DC - 5 GHz

RF Amplifier

The HMC1040LP3CE is a self-biased GaAs MMIC Low Noise Amplifier housed in a leadless 3x3 mm plastic surface mount package. The amplifier operates between 24 and 43.5 GHz, delivering 23 dB of small signal gain, 2.2 dB noise figure, and output IP3 of +22 dBm, while requiring only 70 mA from a +2.5 V supply. The P1dB output power of +12 dBm enables the LNA to function as a LO driver for many of Hittite’s balanced, I/Q and image reject mixers. The HMC1040LP 3CE features I/Os that are DC blocked and internally matched to 50 Ohms, and is ideal for high capacity microwave radios and VSAT applications.Applications Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems

The HMC1040LP3CE is a self-biased GaAs MMIC Low Noise Amplifier housed in a leadless 3x3 mm plastic surface mount package. The amplifier operates between 24 and 43.5 GHz, delivering 23 dB of small signal gain, 2.2 dB noise figure, and output IP3 of +22 dBm, while requiring only 70 mA from a +2.5 V supply. The P1dB output power of +12 dBm enables the LNA to function as a LO driver for many of Hittite’s balanced, I/Q and image reject mixers. The HMC1040LP 3CE features I/Os that are DC blocked and internally matched to 50 Ohms, and is ideal for high capacity microwave radios and VSAT applications.Applications Point-to-Point Radios Test Instrumentation SatCom Transponders & VSAT Industrial Sensors EW & ECM Subsystems

The HMC1127 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between 2 and 50 GHz. The amplifier provides 14.5 dB of gain, 23 dBm output IP3 and 12.5 dBm of output power at 1 dB gain compression while requiring 80 mA from a +5V supply. The HMC1127 amplifier I/Os are internally matched to 50 Ω facilitating integration into Multi-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).APPLICATIONS Test Instrumentation Microwave Radio & VSAT Military & Space Telecom Infrastructure Fiber Optics