The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

2 GHz Ultralow Distortion Differential RF/IF Amplifier Features: −3 dB bandwidth of 2.2 GHz (AV = +10 dB) Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB Single resistor and capacitor distortion adjust Input resistance: 3 kΩ, independent of gain (AV) Differential or single-ended input to differential output Low noise input stage: 2.7 nV/√Hz RTI at AV = 10 dB Low broadband distortion 10 MHz: −86 dBc HD2, −82 dBc HD3 70 MHz: −84 dBc HD2, −82 dBc HD3 190 MHz: −81 dBc HD2, −87 dBc HD3 OIP3 of 41 dBm at 150 MHz Slew rate: 8 V/ns Fast settling and overdrive recovery of <2 ns Single-supply operation: 3 V to 5.5 V Low power dissipation: 37 mA typical at 5 V Power-down capability: 5 mA at 5 V Fabricated using the high speed XFCB3 SiGe process

Low Noise Amplifier SMT, 21 - 29 GHz Features: Noise Figure: 2.5 dB Gain: 13 dB Supply: +3V @ 35mA 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT Package

Low Noise Amplifier SMT, 21 - 29 GHz Features: Noise Figure: 2.5 dB Gain: 13 dB Supply: +3V @ 35mA 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT Package

Low Noise Amplifier SMT, 350 - 550 MHz Features: Noise Figure: ≤1 dB Output IP3: +38 dBm Gain: 17 dB Very Stable Gain vs. Supply & Temp Single Supply: +5V @ 104 mA 50 Ohm Matched Output

Low Noise Amplifier SMT, 350 - 550 MHz Features: Noise Figure: ≤1 dB Output IP3: +38 dBm Gain: 17 dB Very Stable Gain vs. Supply & Temp Single Supply: +5V @ 104 mA 50 Ohm Matched Output

1 Watt Power Amplifier SMT, 5.1 - 5.9 GHz Features: Gain: 20 dB Saturated Power: +32.5 dBm @ 27% PAE Single Supply Voltage: +5V Power Down Capability 3x3 mm Leadless SMT Package

1 Watt Power Amplifier SMT, 3.3 - 3.8 GHz Features: Gain: 31 dB 40% PAE @ +32.5 dBm pout 2% EVM @ Pout = +22 dBm with 54 Mbps OFDM Signal +46 dBm Output IP3 Integrated Power Control (Vpd) Single +5V Supply

Medium Power Amplifier SMT, 17.5 - 25.5 GHz Features: Gain: 13 dB Saturated Power: +23 dBm @ 26% PAE Supply Voltage: +5V 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package

Medium Power Amplifier SMT, 5 - 20 GHz Features: Gain: 19 dB Saturated Power: +21 dBm @ 21% PAE Output IP3: +30 dBm Single Supply: +5V @ 114 mA 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package