3GHz to 20GHz Microwave Mixer with Wideband DC to 6GHz IF Features:Integrated LO Buffer: 0dBm LO Drive50 Wideband Matched RF and LO PortsWide IF Bandwidth: DC to 6GHzUpconversion or DownconversionHigh IIP3:+22.5dBm at 10GHz+18.3dBm at 17GHz+14.6dBm Input P1dB at 10GHz8dB Conversion Loss at 10GHz3.3V/132mA SupplyFast Turn ON/OFF for TDD Operation3mm × 2mm, 12-Lead QFN Package

6GHz High Linearity I/Q Demodulator with Wideband IF Amplifier Features:300MHz to 6GHz Operating FrequencyWide IF Bandwidth: DC to 1GHz (–1dB Bandwidth)High Mixer IIP3: 30dBm at 1.9GHzHigh Total OIP3: 40dBm at 1.9GHzHigh Total OIP2: 74dBm at 1.9GHzUser Adjustable OIP2 to 80dBmUser Adjustable Image Rejection to 60dBUser Adjustable DC Offset NullSerial InterfacePower Conversion Gain: 7.7dB at 1.9GHz31dB RF Attenuator with 1dB Step SizeRF Switch with 40dB Isolation at 1.9GHzSingle-Ended RF Inputs with On-Chip TransformerIF Amplifier Gain Adjustable in 8 StepsOperating Temperature Range (TC): –40°C to 105°C32-Lead 5mm × 5mm QFN Package

x2 Active Multiplier SMT, 27 - 31 GHz Fout Features: Very High Output Power: +20 dBm Low Input Power Drive: -2 to +6 dBm Very High Fo, 3Fo Isolation: >55 dBc @ Fout= 29 GHz 100 kHz SSB Phase Noise: -128 dBc/Hz Single Supply: +5V @ 213 mA 24 Lead 4×4mm QFN Package: 16mm2

HBT Vector Modulator SMT, 700 - 1000 MHz Features: Continuous Phase Control: 360° Continuous Gain Control: 40 dB Low Output Noise Floor: -162 dBm/Hz High Input IP3: +34 dBm 16 Lead 3×3mm SMT Package: 9mm2

40W SPDT Failsafe Switch SMT, 0.1 - 2.1 GHz Features: High Input P0.1dB: +46 dBm Tx Low Insertion Loss: 0.4 dB High IIP3: +74 dBm Single Positive Control: 0/ +3V to 0/ +8V Failsafe Operation; Tx 'On' when Unpowered 2 × 2mm DFN SMT Package

40W SPDT Failsafe Switch SMT, 0.1 - 2.1 GHz Features: High Input P0.1dB: +46 dBm Tx Low Insertion Loss: 0.4 dB High IIP3: +74 dBm Single Positive Control: 0/ +3V to 0/ +8V Failsafe Operation; Tx 'On' when Unpowered 2 × 2mm DFN SMT Package

2 GHz Ultralow Distortion Differential RF/IF Amplifier Features: −3 dB bandwidth of 2.2 GHz (AV = +10 dB) Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB Single resistor and capacitor distortion adjust Input resistance: 3 kΩ, independent of gain (AV) Differential or single-ended input to differential output Low noise input stage: 2.7 nV/√Hz RTI at AV = 10 dB Low broadband distortion 10 MHz: −86 dBc HD2, −82 dBc HD3 70 MHz: −84 dBc HD2, −82 dBc HD3 190 MHz: −81 dBc HD2, −87 dBc HD3 OIP3 of 41 dBm at 150 MHz Slew rate: 8 V/ns Fast settling and overdrive recovery of <2 ns Single-supply operation: 3 V to 5.5 V Low power dissipation: 37 mA typical at 5 V Power-down capability: 5 mA at 5 V Fabricated using the high speed XFCB3 SiGe process

Dual Output Low Noise Amplifier, 0.04 - 0.96 GHz Features: Single-ended or Balanced Output High Output IP3: +27 dBm Low Noise Figure: 3.5 dB Single Positive Supply: +5V 75 Ohm Input

HBT Vector Modulator SMT, 700 - 1000 MHz Features: Continuous Phase Control: 360° Continuous Gain Control: 40 dB Low Output Noise Floor: -162 dBm/Hz High Input IP3: +34 dBm 16 Lead 3×3mm SMT Package: 9mm2

LNA with Failsafe Bypass Mode SMT, 1700 - 2200 MHz Features: Noise Figure: 1.4 dB Output IP3: +29 dBm Gain: 17 dB Failsafe Operation: Bypass is enabled when LNA is unpowered Single Supply: +3V or +5V 16 Lead 3x3mm SMT Package: 9mm²