The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

5-bit Digital Attenuator ;RoHS Compliant: Yes

EVAL BOARD

0.01-30GHZ 0.5W DISTRIBUTED AMPLIFIER

The HMC951A is a compact gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), in-phase quadrature (I/Q) downconverter in a RoHS compliant package that operates from 5.6 GHz to 8.6 GHz. This device provides a small signal conversion gain of 13 dB with a noise figure of 2 dB and an image rejection of 32 dBc. The HMC951A uses a low noise amplifier (LNA) followed by an image mixer that is driven by a local oscillator (LO) buffer amplifier. The image reject mixer eliminates the need for a filter following the LNA and removes thermal noise at the image frequency. The IF1 and IF2 mixer outputs are provided and an external 90? hybrid is needed to select the required sideband. The I/Q mixer topology reduces the need for filtering of unwanted sideband. The HMC951A is a smaller alternative to hybrid style, single sideband (SSB) downconverter assemblies, and it eliminates the need for wire bonding by allowing the use of surface-mount manufacturing techniques.The HMC951A is available in 4 mm ? 4 mm, 24-lead lead frame chip scale package (LFCSP) and operates over the ?40?C to +85?C temperature range. An evaluation board for the HMC951A is also available upon request. Applications Point to point and point to multipoint radios Military radars, electronic warfare, and electronic intelligence Satellite communications Sensors

DC-45GHz 0.2W DISTRIBUTED AMPLIFIER

EVALUATION PCB ASSEMBLY

Interger

The AD6674 is a 385 MHz bandwidth mixed-signal intermediate frequency (IF) receiver. It consists of two, 14-bit 1.0 GSPS/750 MSPS/500 MSPS analog-to-digital converters (ADC) and various digital signal processing blocks consisting of four wideband DDCs, an NSR, and VDR monitoring. It has an on-chip buffer and a sample-and-hold circuit designed for low power, small size, and ease of use. This product is designed to support communications applications capable of sampling wide bandwidth analog signals of up to 2 GHz. The AD6674 is optimized for wide input bandwidth, high sampling rate, excellent linearity, and low power in a small package.The dual ADC cores feature a multistage, differential pipelined architecture with integrated output error correction logic. Each ADC features wide bandwidth inputs supporting a variety of user-selectable input ranges. An integrated voltage reference eases design considerations.Applications Diversity multiband, multimode digital receivers 3G/4G, TD-SCDMA, W-CDMA, GSM, LTE, LTE-A DOCSIS 3.0 CMTS upstream receive paths HFC digital reverse path receivers

The HMC407MS8G & HMC407MS8GE are high?efficiency GaAs InGaP Heterojunction Bipolar?Transistor (HBT) MMIC Power amplifiers which?operate between 5 and 7 GHz. The amplifier requires?no external matching to achieve operation and is?thus truly 50 Ohm matched at input and output. The?amplifier is packaged in a low cost, surface mount?8 leaded package with an exposed base for improved?RF and thermal performance. The amplifier?provides 15 dB of gain, +29 dBm of saturated power?at 28% PAE from a +5V supply voltage. Power down?capability is available to conserve current consumption?when the amplifier is not in use.Applications UNII HiperLAN