Clock Generator, 155.52MHz, ECL, PDSO16

RF Vector Modulator 1.5 GHz TO 2.4 GHz Features: Cartesian amplitude and phase modulation 1.5 GHz to 2.4 GHz frequency range Continuous magnitude control of −4.5 dB to −34.5 dB Continuous phase control of 0° to 360° Output third-order intercept 17.5 dBm Output 1 dB compression point 8.5 dBm Output noise floor −150.5 dBm/Hz at full gain Adjustable modulation bandwidth up to 230 MHz Fast output power disable 4.75 V to 5.25 V single-supply voltage 

7 GHz integer-N PLL Features: 7.0 GHz bandwidth 2.7 V to 3.3 V power supply Separate charge pump supply (VP) allows extended tuning voltage in 3 V systems Programmable dual-modulus prescaler 8/9, 16/17, 32/33, 64/65 Programmable charge pump currents Programmable antibacklash pulsewidth 3-wire serial interface Analog and digital lock detect Hardware and software power-down mode

Wide Band Medium Power Amplifier, 1000MHz Max

The HMC8100LP6JE is a highly integrated IF receiver chip that converts radio frequency (RF) input signals ranging from 800 MHz to 4000 MHz down to a single ended intermediate frequency (IF) signal of 140 MHz at its output. The IF receiver chip is housed in a compact 6 mm x 6 mm LFCSP package and supports complex modulations up to 1024 QAM. The HMC8100LP6JE device includes two VGAs, three power detectors, a programmable AGC block, and selected integrated bandpass filters with 14 MHz, 28 MHz, 56 MHz, and 112 MHz bandwidth. The HMC8100LP6JE also supports baseband IQ interfaces after the mixer so that the chips can be used in the full ODU configuration.The HMC8100LP6JE supports all of the standard microwave frequency bands from 6 to 42 GHz.Applications Point to point communications Satellite communications Wireless microwave backhaul systemsPlease also view complimentary product HMC8200, Intermediate Frequency Transmitter 800 MHz - 4000 MHz.

The HMC1019ALP4E is a broadband 5-bit GaAs IC digital attenuator in a low cost leadless surface mount package. Covering 0.1 to 30.0 GHz, the insertion loss is less than 4.0 dB typical. The attenuator bit values are 0.5 (LS B), 1, 2, 4, 8 for a total attenuation of 15.5 dB. Attenuation accuracy is excellent at ?0.3 dB typical step error with an IIP3 of +45 dBm. The control interface is CMOS/TTL compatible and accepts a three wire serial input. The HMC1019ALP4E features a user selectable power up state and a serial output port for cascading other Analog Devices serial controlled components.APPLICATIONS Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications Sensors Test & Measurement Equipment

The HMC1082CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), driver amplifier that operates from 5.5 GHz to 18 GHz. The HMC1082CHIP provides a typical gain of 24 dB, 36 dBm output IP3, and 25.5 dBm of output power for 1 dB compression, requiring only 220 mA from a 5 V supply voltage. The saturated output power (PSAT) is 26 dBm with 24% power added efficiency (PAE).The HMC1082CHIP is an ideal driver amplifier for a wide range of applications including point to point radios from 5.5 GHz to 18 GHz and marine radars at 9 GHz. The HMC1082CHIP can also be used for 6 GHz to 18 GHz EW and ECM applications.APPLICATIONS Software defined radios Electronics warfare (EW) Radar applications Electronic countermeasures (ECMs)

The HMC213BMS8E is an ultraminiature double balanced mixer in a plastic, 8-lead mini small outline package (MSOP). This passive monolithic microwave integrated circuit (MMIC) mixer is constructed of gallium arsenide (GaAs) Schottky diodes and novel planar transformer baluns on the chip. The device can be used as an upconverter, downconverter, biphase demodulator or modulator, or phase comparator. The consistent MMIC performance improves system operation and ensures regulatory compliance.Applications Base stations Personal Computer Memory Card International Association (PCMCIA) transceivers Wireless local loops

The HMC270AMS8GE are broad-band non-reflectiveGaAs SPDT switches in 8 lead MSOP grounded basesurface mount plastic packages. Covering DC to 8GHz, the switch offers excellent isolation from 70 to35 dB. The negative control voltage of -5 volts allowsoperation down to DC. If positive control is requiredalong with high isolation, see the DC to 3.5 GHzHMC284AMS8GE non-reflective SPDT.APPLICATIONSThe HMC270AMS8GE is ideal for DC - 8.0 GHz applications: CATV MMDS and wireless LAN Wireless local loop

The HMC345ALP3E is a broadband non-reflective GaAs MESFET SP4T switch in a low cost leadless surface mount packages. Covering DC to 8 GHz, this switch offers high isolation and low insertion loss. This switch also includes an on board binary decoder circuit which reduces the required logic control lines to two. The switch operates using a positive control voltage of 0/+5V, and requires a fixed bias of +5V.* Blocking capacitors are required at ports RFC and RF1, 2, 3, & 4. Their value will determine the lowest transmission frequency.APPLICATIONSThis switch is suitable for usage in DC - 8.0 GHz 50-Ohm or 75-Ohm systems: Broadband Fiber Optics Switched Filter Banks Wireless below 8 GHz