The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

RF Amplifier VGA, 7-20 GHz

10 MHz TO 10 GHz 67 dB TruPwr Detector Features: Accurate rms-to-dc conversion from 10 MHz to 10 GHz Single-ended ±1 dB dynamic range: 67 dB at 2.14 GHz    No balun or external input matching required Response independent of waveform types, such as GSM/CDMA/W-CDMA/TD-SCDMA/WiMAX/LTE Logarithmic slope: 55 mV/dB Temperature stability: <±1 dB from −40°C to +125°C Operating temperature: −55°C to +125°C Supply voltage: 4.75 V to 5.25 V Sleep current: 250 µA Pin-compatible with ADL5902 and AD8363

Single, Integer-N 550 MHz PLL Features: ADF4116: 550 MHz ADF4117: 1.2 GHz ADF4118: 3.0 GHz 2.7 V to 5.5 V power supply Separate VP allows extended tuning voltage in 3 V systems Y Grade: −40°C to +125°C Dual-modulus prescaler ADF4116: 8/9 ADF4117/ADF4118: 32/33 3-wire serial interface Digital lock detect Power-down mode Fastlock mode

Sub-GHz Modules x2 Active freq mult Module, 8-21 GHz out

Low Noise Amplifier Chip, 2 - 4 GHz Features: Gain Flatness: 0.2 dB Output IP3: +36 dBm Gain: 10 dB DC Supply: +6V @ 100mA 50 Ohm Matched Input/Output Die Size: 1.32 x 1.21 x 0.10 mm

GaAs MMIC I/Q Receiver Chip, 21 - 25 GHz Features: Conversion Gain: 11 dB Image Rejection: 24 dB 2 LO to RF Isolation: 40 dB Noise Figure: 3 dB Input IP3: +5 dBm Die Size: 2.33 × 2.51 × 0.10 mm

RF Amplifier IC General Purpose 4.8GHz ~ 6GHz 16-QFN (3x3)

GaAs InGaP HBT MMIC Ultra Low Phase Noise, Distributed Amplifier, 2 - 18 GHz Features: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz P1dB Output Power: +15 dBm Gain: 14 dB Output IP3: +27 dBm Supply Voltage: +5V @ 64 mA 50 Ω Matched Input/Output Die Size: 2.80 x 1.73 x 0.1 mm

Low Noise Amplifier Chip, 7.0 - 13.5 GHz Features: Noise Figure: 1.8 dB Gain: 17 dB OIP3: 24 dBm Single Supply: +3V @ 51 mA 50 Ohm Matched Input/Output Small Size: 1.96 x 0.98 x 0.10 mm