Attenuators 1 dB LSB 5Bit dig atten Chip 0.1-40 GHz

Phase Locked Loops - PLL Phase-Locked Oscillator , 14.7-15.4GHz

RF Amplifier IC General Purpose 4.8GHz ~ 6GHz 16-QFN (3x3)

Sub-GHz Modules x2 Active freq mult Module, 8-21 GHz out

RF Amplifier VGA, 7-20 GHz

Low Noise Amplifier Chip, 2 - 4 GHz Features: Gain Flatness: 0.2 dB Output IP3: +36 dBm Gain: 10 dB DC Supply: +6V @ 100mA 50 Ohm Matched Input/Output Die Size: 1.32 x 1.21 x 0.10 mm

The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

RF Amplifier GaAs HEMT MMIC Med pow amp, 37 - 45 GHz

The ADL9006 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier provides 15.5 dB of gain, 2.5 dB noise figure, 26 dBm output third-order intercept (OIP3), and 20 dBm of output power for 1 dB compression (P1dB) while requiring 53 mA from a 5 V supply. The ADL9006 is self biased with only a single positive supply needed to achieve a supply current (IDD) of 53 mA.The ADL9006 amplifier input and output are internally matched to 50 ?.ADL9006CHIPSThe ADL9006CHIPS is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), low noise amplifier that operates from 2 GHz to 28 GHz. The amplifier provides 15.5 dB of gain, 2.2 dB of noise figure, 24 dBm of output third-order intercept (IP3), 20 dBm of output saturated power (PSAT), and 19 dB of power output for 1 dB compression (P1dB) while requiring a 55 mA power supply current (IDD) from a 5 V total supply voltage. The ADL9006CHIPS is self biased with only a single positive supply needed to achieve an IDD of 55 mA.The ADL9006CHIPS amplifier input and output are internally matched to 50 ? facilitating integration into multichip modules (MCMs).APPLICATIONS Test instrumentation Military and space Local oscillator driver amp ADL9006CHIPS Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space

The ADMV1017 is a silicon germanium (SiGe), microwave, upconverter and downconverter optimized for 5G radio designs operating in the 24 GHz to 29.5 GHz frequency range.The upconverter offers two modes of frequency translation. The device is capable of direct conversion to radio frequency (RF) from differential baseband I/Q input signals, as well as single-sideband (SSB) upconversion from complex intermediate frequency (IF) inputs. Alternatively, the differential baseband I/Q input path can be disabled and a modulated, single-ended, complex IF signals from 3 GHz to 10.5 GHz can be fed to the IF path. These signals can then be upconverted to 24 GHz to 29.5 GHz while rejecting the unwanted sideband by typically better than 25 dBc. The serial port interface (SPI) provides adjustment of the quadrature phase to allow optimum sideband rejection. In addition, the SPI interface allows powering down the output envelope detector to reduce power consumption when carrier feed through optimization is not necessary.The downconverter offers two modes of frequency translation. The device is capable of direct quadrature demodulation to differential baseband I/Q output signals, as well as image rejection downconversion to a single-ended complex IF output carrier frequency. The differential baseband outputs can be dc-coupled. More typically, however, the I/Q outputs are ac-coupled with a sufficiently low high-pass corner frequency to ensure adequate demodulation accuracy. The I/Q baseband output common-mode voltage is programmable between 0.75 V and 2.15 V. The SPI interface provides fine adjustment of the quadrature phase to optimize I/Q demodulation performance. Alternatively, the baseband I/Q outputs can be disabled, and the I/Q signals can be passed through an on-chip, active balun to provide two, single-ended, complex IF outputs between 3 GHz and 10.5 GHz. When the device is used as an image rejecting down-converter, the unwanted image term is typically rejected to better than 25 dBc below the desired sideband. The ADMV1017 offers a square law power detector to allow monitoring of the power levels at the mixer inputs. The detector output provides closed-loop control of the RF digital step attenuator via an external automatic gain control (AGC) loop.The ADMV1017 upconverter and downconverter is housed in a compact, thermally enhanced, 9 mm ? 8 mm, land grid array (LGA) package. The ADMV1017 operates over the ?40?C to +95?C case temperature range. Throughout the figures in the data sheet, Rx means receiver and Tx means transmitter.APPLICATIONS5G applicationsPoint to point microwave radiosRadar and electronic warfare systemsInstrumentation and automatic test equipment (ATE)