The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

Attenuators

RF Modules lo Noise amp Module, 5 - 9 GHz

Phase Locked Loops - PLL 1000-2500MHz Frac-N PLL

0.25dB LSB 7-Bit Digital Attenuator SMT, 10 - 300 MHz Features: 0.25 dB LSB Steps to 31.75 dB Power-Up State Selection High Input IP3: +40 dBm TTL/CMOS Compatible, Serial Control Excellent State & Step Accuracy ±0.25 dB Single +5V Supply 16 Lead 3×3mm SMT Package: 9mm2

Low Noise Amplifier Chip, 7.0 - 13.5 GHz Features: Noise Figure: 1.8 dB Gain: 17 dB OIP3: 24 dBm Single Supply: +3V @ 51 mA 50 Ohm Matched Input/Output Small Size: 1.96 x 0.98 x 0.10 mm

RF Amplifier lo Noise amp SMT, 350 - 550 MHz

HMC5927LS6 - Amplifier Evaluation Board

GaAs InGaP HBT MMIC Ultra Low Phase Noise, Distributed Amplifier, 2 - 18 GHz Features: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz P1dB Output Power: +15 dBm Gain: 14 dB Output IP3: +27 dBm Supply Voltage: +5V @ 64 mA 50 Ω Matched Input/Output Die Size: 2.80 x 1.73 x 0.1 mm

Low Noise Amplifier Chip, 2 - 4 GHz Features: Gain Flatness: 0.2 dB Output IP3: +36 dBm Gain: 10 dB DC Supply: +6V @ 100mA 50 Ohm Matched Input/Output Die Size: 1.32 x 1.21 x 0.10 mm