The HMC1056LP4BE is a compact I/Q MMIC mixer in a leadless ?Pb free? SMT package, which can be used as either an Image Reject Mixer or a Single Sideband Upconverter. The mixer utilizes two standard Hittite double balanced mixer cells and a 90 degree hybrid fabricated in a GaAs Schottky diode process. A low frequency quadrature hybrid was used to produce a 100MHz LSB IF output. This product is a much smaller alternative to hybrid style Image Reject Mixers and Single Sideband Upconverter assemblies. The HMC1056LP4BE eliminates the need for wire bonding and allows the use of surface mount manufacturing techniques.APPLICATIONS Point-to-Point and?Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications Sensors

The HMC1097LP4E is a low noise, high linearity Direct Quadrature Modulator RFIC which is ideal for digital modulation applications from 0.1 to 6.0 GHz including; Cellular/3G, WiMAX/4G, Broadband Wireless Access & ISM circuits. Housed in a compact 4x4 mm (LP4) SMT QFN package, the RFIC requires minimal external components & provides a low cost alternative to more complicated double upconversion architectures. The RF output port is single-ended and matched to 50 Ohms with no external components. The LO requires -6 to +6 dBm and can be driven in either differential or single-ended mode. This device is optimized for a +5V supply, and offers improved carrier feedthrough and sideband suppression characteristics.APPLICATIONS UMTS, GSM or CDMA Basestations Fixed Wireless or WLL ISM Transceivers, 900 & 2400 MHz GMSK, QPSK, QAM, SSB Modulators Cellular/3G and WiMAX/4G

The HMC190BMS8(E) is a low cost SPDT switch in a 8-lead MSOP package. The switch can control signals from DC to 3 GHz. It is especially suited for low and medium power applications using positive control voltages. The two control voltages require a minimal amount of DC current, which is optimal for battery powered radio systems at 0.9, 1.9, and 2.4 GHz. The HMC190BMS8(E) provides exceptional third order intermodulation performance of +56 dBm. The design has been optimized for the small MSOP package, and maintains a VSWR of better than 1.2:1 up to 2 GHz. This device is the positive control MSOP8 packaged version of our HMC239AS8(E) negative control device.APPLICATIONS MMDS & WirelessLAN Portable Wireless

DC1774A-A: Demo Board for the LTC6430-15 High Linearity Differential RF/IF Amplifier/ADC Driver.

Phase Locked Loops - PLL WBand RF PLL VCO, 25-3000MHz

The HMC6981 is a four-stage GaAs pHEMT MMIC Power Amplifier with an integrated temperature compensated on-chip Power Detector, which operates between 15 and 20 GHz. The amplifier provides 26 dB of gain, +34.5 dBm of saturated output power, and 25% PAE from a +6V supply. With an excellent output IP3 of +43.5 dBm, the HMC6981 is ideal for linear applications such as high capacity point-to-point or point-to-multi-point radios or SATCOM applications demanding +34.5 dBm of efficient saturated output power. The HMC6981 is housed in a ceramic 6 x 6 mm high frequency air cavity package which exhibits low thermal resistance and is compatible with high volume surface mount manufacturing techniques. The RF I/Os are internally matched to 50 Ohms.Applications Point-to-Point Radios Point-to-Multi-Point Radios SATCOM

The HMC394LP4(E) is a low noise GaAs HBT programmable 5-bit counter in 4x4 mm leadless surface mount package. This device allows continuous division from N= 2 to 32 at input frequencies up to 2.2 GHz. The output voltage swing is 800 mV with a duty cycle inversely proportional to N. The low additive SSB phase noise of -153 dBc/Hz at 100 KHz offset makes this counter an excellent choice for low noise synthesizer applications.APPLICATIONSProgrammable divider for offset synthesizer and variable divide by N applications: Satellite Communication Systems Point-to-Point and Point-to-Multi-Point Radios LMDS SONET

The HMC327MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 3 and 4 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 21 dB of gain, +30 dBm of saturated power at 45% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.Applications Wireless Local Loop

The HMC413QS16G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 1.6 and 2.2 GHz. The amplifier is packaged in a low cost, surface mount 16 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage. The amplifi er can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control.Applications Cellular / PCS / 3G Portable & Infrastructure Wireless Local Loop

The HMC194AMS8E is a low-cost SPDT switch in an 8-lead MSOP packages for use in applications which require high isolation between two RF paths. The devices can control signals from DC to 3 GHz and have been optimized to provide extremely high isolation with minimal insertion loss in medium and low power applications. On chip circuitry allows positive voltage control operation at very low DC cur- rents with control inputs compatible with CMOS and most TTL logic families. RF1 and RF2 are reflective opens when ?OFF?.APPLICATIONS Cellular/PCS Base Stations Portable Wireless MMDS & WirelessLAN