RF Mixer DBL-BAL mix SMT 4.5 - 9.0 GHz

The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56% typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ?0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.The ADPA1106 is ideal for pulsed applications such as marine, weather, and military radar.The ADPA1106 comes in a 32-lead, lead frame chip scale package, premolded cavity (LFCSP_CAV) and is specified for operation from ?40?C to +85?C.APPLICATIONSWeather radarMarine radarMilitary radar

The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output power for 1 dB compression (P1dB) of 31 dBm, and a typical output thirdorder intercept (IP3) of 41 dBm. The ADPA7007CHIP requires 1400 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data was taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation

The ADPA7008CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 31 dBm saturated output power (1 W) distributed power amplifier that operates from 20 GHz to 54 GHz. The amplifier provides a gain of 18 dB, an output power for 1 dB compression (P1dB) of 30.5 dBm, and a typical output third-order intercept (IP3) of 38 dBm at 22 GHz to 42 GHz. The ADPA7008CHIP requires 1500 mA from a 5 V supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data is taken with the RFIN and RFOUT pads connected via one 0.076 mm (3 mil) ribbon bond of 0.076 mm (3 mil) minimal length.APPLICATIONSMilitary and spaceTest instrumentationSatellite communications

The ADRF5020 is a general-purpose, single-pole, double-throw(SPDT) switch manufactured using a silicon process. It comesin a 3 mm ? 3 mm, 20-lead land grid array (LGA) package andprovides high isolation and low insertion loss from 100 MHz to30 GHz.This broadband switch requires dual supply voltages, +3.3 Vand ?2.5 V, and provides CMOS/LVTTL logic-compatiblecontrol.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5026 is a nonreflective, single-pole, double-throw (SPDT) radio frequency (RF) switch manufactured in a silicon process.The ADRF5026 operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026 features an all off control, where both RF ports are in an isolation state. The ADRF5026 has a nonreflective design and both of the RF ports are internally terminated to 50 ?. The ADRF5026 requires a dual-supply voltage of +3.3 V and ?3.3 V. The device employs complimentary metal-oxide semiconductor/low-voltage transistor-transistor logic (CMOS/LVTTL) logic-compatible controls.The ADRF5026 is pin-compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz. The ADRF5026 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Narrow-Band Impedance Matching section for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz.The ADRF5026 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.The ADRF5026 supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations.The ADRF5130 has high power handling of 43 dBm (maximum) and 0.1 dB compression (P0.1dB) of 46 dBm, with a low insertion loss of 0.6 dB at 2 GHz and 0.7 dB at 3.5 GHz. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches.The device comes in a RoHS compliant, compact, 24-lead, 4 mm ? 4 mm LFCSP package.Applications Cellular/4G infrastructure Wireless infrastructure Military and high reliability applications Test equipment Pin diode replacement

The ADRF5144 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process.The ADRF5144 operates from 1 GHz to 20 GHz with typical insertion loss of 0.85 dB and typical isolation of 48 dB. The device has a radio frequency (RF) input power handling capability of 40 dBm average power and TBD dBm peak power for the insertion loss path. The ADRF5144 also supports extended frequency range of 9 kHz to 26.5 GHz with derated power handling capability below 1 GHz and above 20 GHz.The ADRF5144 draws a low current of 130 ?A on the positive supply of +3.3 V and 510 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5144 requires no additional driver circuitry, making it an ideal alternative to GaN and PIN diode-based switches.The ADRF5144 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance will be maintained while the switching characteristics, linearity and power handling performance will be derated, see Table 2 in the data sheet.The ADRF5144 comes in a 20-lead, 3.0 mm ? 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +85?C.APPLICATIONSTest instrumentationMilitary radios, radars, and electronic counter measuresSATCOMGaN and PIN diode replacement

The LT5538 is a 40MHz to 3800MHz monolithic logarithmic RF power detector, capable of measuring RF signals over a wide dynamic range, from ?75dBm to 10dBm. The RF signal in an equivalent decibel-scaled value is precisely converted into DC voltage on a linear scale. The wide linear dynamic range is achieved by measuring the RF signal using cascaded RF limiters and RF detectors. Their outputs are summed to generate an accurate linear DC voltage proportional to the input RF signal in dBm. The LT5538 delivers superior temperature stable output (within ?1dB over full temperature range) from 40MHz to 3.8GHz. The output is buffered with a low impedance driver.Applications Received Signal Strength Indication (RSSI) RF Power Measurement and Control RF/IF Power Detection Receiver RF/IF Gain Control Envelope Detection ASK Receiver

The HMC6981 is a four-stage GaAs pHEMT MMIC Power Amplifier with an integrated temperature compensated on-chip Power Detector, which operates between 15 and 20 GHz. The amplifier provides 26 dB of gain, +34.5 dBm of saturated output power, and 25% PAE from a +6V supply. With an excellent output IP3 of +43.5 dBm, the HMC6981 is ideal for linear applications such as high capacity point-to-point or point-to-multi-point radios or SATCOM applications demanding +34.5 dBm of efficient saturated output power. The HMC6981 is housed in a ceramic 6 x 6 mm high frequency air cavity package which exhibits low thermal resistance and is compatible with high volume surface mount manufacturing techniques. The RF I/Os are internally matched to 50 Ohms.Applications Point-to-Point Radios Point-to-Multi-Point Radios SATCOM