The ADMV4420 is a highly integrated, double balanced, active mixer with an integrated fractional-N synthesizer, ideally suited for next generation K band satellite communications.The RF front end consists of an integrated RF balun and low noise amplifier (LNA) for an optimal, 7 dB, single-sideband noise figure while minimizing external components. Additionally, the high dynamic range IF output amplifier provides a nominal conversion gain of 36 dB.An integrated low phase noise, fractional-N, phase-locked loop (PLL) with a multicore voltage controlled oscillator (VCO) and internal 2? multiplier generate the necessary on-chip LO signal for the double balanced mixer, eliminating the need for external frequency synthesis. The multicore VCO uses an internal autocalibration routine that allows the PLL to select the necessary settings and lock in approximately 400 ?s.The reference input to the PLL employs a differentially excited 50 MHz crystal oscillator. Alternatively, the reference input can be driven by an external, singled-ended, 50 MHz source. The phase frequency detector (PFD) comparison frequency of the PLL operates up to 50 MHz.The ADMV4420 is fabricated on a silicon germanium (SiGe), bipolar complementary metal-oxide semiconductor (BiCMOS) process, and is available in a 32-lead, RoHS compliant, 5 mm ? 5 mm LFCSP package with an exposed pad. The device is specified over the ?40?C to +85?C temperature range on a 5 V power supply.Applications Satellite communication Point to point microwave communication

The ADMV7420 is a fully integrated system in package (SiP) inphase/quadrature (I/Q) downconverter that operates betweenan intermediate frequency (IF) output range of dc and 2 GHzand a radio frequency (RF) input range of 81 GHz and 86 GHz.The device provides a small signal conversion gain of 10 dBwith 30 dBc of image rejection. The ADMV7420 uses a lownoise amplifier followed by an image rejection mixer that isdriven by a 6? local oscillator (LO) multiplier. Differential I andQ mixer outputs are provided for direct conversion applications.Alternatively, the outputs can be combined using an external90? hybrid and two external 180? hybrids for single-endedapplications.The ADMV7420 comes in a fully integrated, surface-mount,34-terminal, 11 mm ? 13 mm, chip array small outline no leadcavity (LGA_CAV) package. The ADMV7420 operates over the?40?C to +85?C case temperature range. APPLICATIONS E-band communication systems High capacity wireless backhauls Test and measurement Aerospace and defense

The ADPA1106 is a gallium nitride (GaN), broadband power amplifier that delivers 46 dBm (40 W) with 56% typical power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.1 GHz. The ADPA1106 has a gain flatness of ?0.15 dB across the 2.7 GHz to 3.1 GHz frequency range.The ADPA1106 is ideal for pulsed applications such as marine, weather, and military radar.The ADPA1106 comes in a 32-lead, lead frame chip scale package, premolded cavity (LFCSP_CAV) and is specified for operation from ?40?C to +85?C.APPLICATIONSWeather radarMarine radarMilitary radar

The ADPA7007CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 18 GHz to 44 GHz. The amplifier provides a gain of 21.5 dB, an output power for 1 dB compression (P1dB) of 31 dBm, and a typical output thirdorder intercept (IP3) of 41 dBm. The ADPA7007CHIP requires 1400 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 ?, facilitating integration into multichip modules (MCMs). All data was taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.Applications Military and space Test instrumentation

The ADRF5020 is a general-purpose, single-pole, double-throw(SPDT) switch manufactured using a silicon process. It comesin a 3 mm ? 3 mm, 20-lead land grid array (LGA) package andprovides high isolation and low insertion loss from 100 MHz to30 GHz.This broadband switch requires dual supply voltages, +3.3 Vand ?2.5 V, and provides CMOS/LVTTL logic-compatiblecontrol.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5026 is a nonreflective, single-pole, double-throw (SPDT) radio frequency (RF) switch manufactured in a silicon process.The ADRF5026 operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026 features an all off control, where both RF ports are in an isolation state. The ADRF5026 has a nonreflective design and both of the RF ports are internally terminated to 50 ?. The ADRF5026 requires a dual-supply voltage of +3.3 V and ?3.3 V. The device employs complimentary metal-oxide semiconductor/low-voltage transistor-transistor logic (CMOS/LVTTL) logic-compatible controls.The ADRF5026 is pin-compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz. The ADRF5026 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Narrow-Band Impedance Matching section for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz.The ADRF5026 comes in a 20-terminal, 3 mm ? 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.The ADRF5026 supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations.The ADRF5130 has high power handling of 43 dBm (maximum) and 0.1 dB compression (P0.1dB) of 46 dBm, with a low insertion loss of 0.6 dB at 2 GHz and 0.7 dB at 3.5 GHz. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches.The device comes in a RoHS compliant, compact, 24-lead, 4 mm ? 4 mm LFCSP package.Applications Cellular/4G infrastructure Wireless infrastructure Military and high reliability applications Test equipment Pin diode replacement

The ADRF5144 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process.The ADRF5144 operates from 1 GHz to 20 GHz with typical insertion loss of 0.85 dB and typical isolation of 48 dB. The device has a radio frequency (RF) input power handling capability of 40 dBm average power and TBD dBm peak power for the insertion loss path. The ADRF5144 also supports extended frequency range of 9 kHz to 26.5 GHz with derated power handling capability below 1 GHz and above 20 GHz.The ADRF5144 draws a low current of 130 ?A on the positive supply of +3.3 V and 510 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5144 requires no additional driver circuitry, making it an ideal alternative to GaN and PIN diode-based switches.The ADRF5144 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance will be maintained while the switching characteristics, linearity and power handling performance will be derated, see Table 2 in the data sheet.The ADRF5144 comes in a 20-lead, 3.0 mm ? 3.0 mm, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +85?C.APPLICATIONSTest instrumentationMilitary radios, radars, and electronic counter measuresSATCOMGaN and PIN diode replacement

The LT5538 is a 40MHz to 3800MHz monolithic logarithmic RF power detector, capable of measuring RF signals over a wide dynamic range, from ?75dBm to 10dBm. The RF signal in an equivalent decibel-scaled value is precisely converted into DC voltage on a linear scale. The wide linear dynamic range is achieved by measuring the RF signal using cascaded RF limiters and RF detectors. Their outputs are summed to generate an accurate linear DC voltage proportional to the input RF signal in dBm. The LT5538 delivers superior temperature stable output (within ?1dB over full temperature range) from 40MHz to 3.8GHz. The output is buffered with a low impedance driver.Applications Received Signal Strength Indication (RSSI) RF Power Measurement and Control RF/IF Power Detection Receiver RF/IF Gain Control Envelope Detection ASK Receiver

The HMC487LP5E is a high dynamic range GaAsPHEMT MMIC 2 Watt Power Amplifiers housedin leadless 5 x 5 mm surface mount packages.Operating from 9 to 12 GHz, the amplifier provides20 dB of gain, +33 dBm of saturated power and 20%PAE from a +7V supply voltage. Output IP3 is +36 dBmtypical. The RF I/Os are DC blocked and matched to 50Ohms for ease of use. The HMC487LP5E eliminatesthe need for wire bonding, allowing use of surfacemount manufacturing techniques.Applications Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment and Sensors Military End-Use