High Voltage, Current Shunt Monitor Features: ±4000 V HBM ESD High common-mode voltage range −2 V to +65 V operating −3 V to +68 V survival Buffered output voltage Wide operating temperature range 8-Lead SOIC_N: −40°C to +125°C Excellent ac and dc performance 6 μV/°C typical offset drift −8 ppm/°C typical gain drift 120 dB typical CMRR at dc Qualified for Automotive Applications

Single-Supply, Low Cost Instrumentation Amplifier Features:Gain set with 1 resistor per amplifierGain = 5 to 1000InputsVoltage range to 150 mV below negative rail25 nA maximum input bias current30 nV/Hz, RTI noise @ 1 kHzPower suppliesDual supply: 2V to 12Single supply: 3V to 24V500 A maximum supply current

Single-Supply, Low Power, Precision FET Input Quad Buffer Features: Low power 250 μA maximum supply current per amplifier FET input 2 pA maximum input bias current at 25°C Extremely high input impedance Low noise 13 nV/√Hz voltage noise at 1 kHz 0.4 μV p-p voltage noise (0.1 Hz to 10 Hz) 0.8 fA/√Hz current noise at 1 kHz High dc precision 3 μV/°C maximum offset drift (B grade) 3 MHz bandwidth Unique pinout No leakage from inputs to supply pins Provides guarding capability Rail-to-rail output Single-supply operation Input range extends to ground Wide supply range Single-supply: 3 V to 36 V Dual-supply: ±1.5 V to ±18 V  Available in a compact 10-lead MSOP

10 MHz, G = 1, 10, 100, 1000 iCMOS Programmable Gain Instrumentation Amplifier Features: Small package: 10-lead MSOP Programmable gains: 1, 10, 100, 1000 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V Excellent dc performance High CMRR: 100 dB (minimum), G = 100 Low gain drift: 10 ppm/°C (maximum) Low offset drift: 1.2 µV/°C (maximum), G = 1000 See data sheet for additional features

Low Power, Wide Supply Range, Low Cost Unity-Gain Difference Amplifiers Features: Wide input range beyond supplies Rugged input overvoltage protection Low supply current: 200 μA maximum per channel Low power dissipation: 0.54 mW at VS = 2.7 V Bandwidth: 550 kHz CMRR: 86 dB minimum, dc to 10 kHz System offset voltage: ±2 μV/°C maximum (B Grade) Low gain drift: 1 ppm/°C maximum (B Grade) Enhanced slew rate: 1.1 V/μs Wide power supply range Single supply: 2.0 V to 36 V Dual supplies: ±2 V to ±18 V

2 GHz Ultralow Distortion Differential RF/IF Amplifier Features: −3 dB bandwidth of 2.2 GHz (AV = +10 dB) Single resistor gain adjust: 3 dB ≤ AV ≤ 25 dB Single resistor and capacitor distortion adjust Input resistance: 3 kΩ, independent of gain (AV) Differential or single-ended input to differential output Low noise input stage: 2.7 nV/√Hz RTI at AV = 10 dB Low broadband distortion 10 MHz: −86 dBc HD2, −82 dBc HD3 70 MHz: −84 dBc HD2, −82 dBc HD3 190 MHz: −81 dBc HD2, −87 dBc HD3 OIP3 of 41 dBm at 150 MHz Slew rate: 8 V/ns Fast settling and overdrive recovery of <2 ns Single-supply operation: 3 V to 5.5 V Low power dissipation: 37 mA typical at 5 V Power-down capability: 5 mA at 5 V Fabricated using the high speed XFCB3 SiGe process

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

3 nV /Hz, Low Power Instrumentation Amplifier Features: Low power 2.3 mA maximum supply current Low noise 3.2 nV/√Hz maximum input voltage noise at 1 kHz 200 fA/√Hz current noise at 1 kHz Excellent ac specifications  10 MHz bandwidth (G = 1) 2 MHz bandwidth (G = 100) 0.6 µs settling time to 0.001% (G = 10) 80 dB CMRR to 20 kHz (G = 1) 35 V/µs slew rate High precision dc performance (AD8421BRZ) 94 dB CMRR minimum (G = 1) 0.2 μV/C maximum input offset voltage drift 1 ppm/C maximum gain drift (G = 1)500 pA maximum input bias current Inputs protected to 40 V from opposite supply ±2.5 V to 18 V dual supply (5 V to 36 V single supply) Gain set with a single resistor (G = 1 to 10,000) Available in 8-lead LFCSP, 8-lead MSOP, and 8-lead SOIC Download AD8421-KGD Data Sheet Available As Known Good Die and fully guaranteed to data sheet specificationsAD8421-EP supports defense and aerospace applications (AQEC standard) Download AD8421-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/13625 DSCC Drawing Number