Digital to Analog Converters - DAC ual 10Bit D/A, in MSOP, I2C Interface

Micropower, Dual-Channel Digital Isolators, Default Low (2/0 Channel Directionality) Features: Ultralow power operation 3.3 V operation 6 μA per channel quiescent current, refresh enabled 0.3 μA per channel quiescent current, refresh disabled 148 μA/Mbps per channel typical dynamic current 116 μA/Mbps per channel typical dynamic current Quad-channel products available See datasheet for additional features

Robust, Triple Ch. Isolator W/ Output Enable & 0 Reverse Channels Features: High common-mode transient immunity: 100 kV/µs High robustness to radiated and conducted noise Low propagation delay 13 ns maximum for 5 V operation 15 ns maximum for 1.8 V operation 150 Mbps maximum guaranteed data rate Backward compatibility ADuM130E1/ADuM131E1 pin compatible with ADuM1300/ADUM1301 Low dynamic power consumption 1.8 V to 5 V level translation High temperature operation: 125°C Fail-safe high or low options 16-lead, RoHS compliant, SOIC package See data sheet for additional information

Dual-Channel, Digital Isolator, Enhanced System-Level ESD Reliability Features: Enhanced system-level ESD performance per IEC 61000-4-x  High temperature operation: 125°C Narrow body, RoHS-compliant, 8-lead SOIC Low power operation  5 V operation (refer to data sheet) 3.3 V operation (refer to data sheet) Bidirectional communication 3.3 V/5 V level translation See data sheet for additional featuresADuM3200-EP supports defense and aerospace applications (AQEC standard) Download ADuM3200-EP Data Sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline  Enhanced product change notification  Qualification data available on request Qualified for automotive applications Automotive versions qualified per AEC-Q100 V62/14627 DSCC Drawing Number

Triple-Channel, Digital Isolator, Enhanced System-Level ESD Reliability (2/1 channel directionality) Features: Enhanced system-level ESD performance per IEC 61000-4-x Low power operation 5 V operation 2.0 mA per channel maximum at 0 Mbps to 2 Mbps 4.1 mA per channel maximum at 10 Mbps 36 mA per channel maximum at 90 Mbps 3.3 V operation 1.0 mA per channel maximum at 0 Mbps to 2 Mbps 2.8 mA per channel maximum at 10 Mbps 17 mA per channel maximum at 90 Mbps Bidirectional communication 3.3 V/5 V level translation High temperature operation: 105°C High data rate: dc to 90 Mbps (NRZ) Precise timing characteristics 2 ns maximum pulse width distortion 2 ns maximum channel-to-channel matching High common-mode transient immunity: >25 kV/μs Output enable function 16-lead SOIC wide body, RoHS-compliant package Safety and regulatory approvals UL recognition: 2500 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A VDE Certificate of Conformity DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12 VIORM = 560 V peak CQC Certification per GB4943.1-2011

12-Bit High Speed Multiplying D/A Converter Features: Differential Nonlinearity: ±1/2 LSB Nonlinearity: 0.05% Fast Settling Time: 250 ns High Compliance: -5 V to +10 V Differential Outputs: 0 to 4 mA Guaranteed Monotonicity: 12 bits Low Full-Scale Tempco: 10 ppm/°C Circuit Interface to TTL, CMOS, ECL, PMOS/NMOS Low Power Consumption: 225 mW Industry Standard AM6012 Pinout Available in Die Form

Quad 8-Bit Multiplying CMOS D/A Converter with Memory Features: Four DACs in a 28 Pin, 0.6 Inch Wide DIP or 28-Pin JEDEC Plastic Chip Carrier ±1/4 LSB Endpoint Linearity Guaranteed Monotonic DACs Matched to Within 1% Microprocessor Compatible Read/Write Capability (with Memory) TTL/CMOS Compatible Four-Quadrant Multiplication Single-Supply Operation (+5 V) Low Power Consumption Latch-Up Resistant Available in Die Form

13 Gbps, Fast Rise Time AND/NAND/OR/NOR Gate, with Programmable Output Voltage Features: Supports High Data Rates: up to 13 Gbps Differential & Single-Ended Ouputs Fast Rise & Fall Times: 19 / 18 ps Low Power Consumption: 230 mW typ. Single Supply: -3.3V Programmable Differential Output Voltage Swing: 600 - 1100 mV Propagation Delay: 95 ps 16 Lead Ceramic 3 × 3mm SMT Package: 9mm2;

Precision Wide-range (3 nA - 3 mA) High-Side Current Mirror Features: Accurately mirrors input current (1:1 ratio) over 6 decades - enables monitoring at low signal levels  Linearity 1% from 3 nA to 3 mA Stable mirror input voltage Voltage held 1 V below supply using internal reference or may be set externally providing greater flexibility in design Adjustable input current limit provides protection to the connected photodiode 2.7 V to 8 V single-supply operation Miniature 8-lead chip scale package (LFCSP 2 mm × 3 mm) saves valuable board space

10 MHz TO 10 GHz 67 dB TruPwr Detector Features: Accurate rms-to-dc conversion from 10 MHz to 10 GHz Single-ended ±1 dB dynamic range: 67 dB at 2.14 GHz    No balun or external input matching required Response independent of waveform types, such as GSM/CDMA/W-CDMA/TD-SCDMA/WiMAX/LTE Logarithmic slope: 55 mV/dB Temperature stability: <±1 dB from −40°C to +125°C Operating temperature: −55°C to +125°C Supply voltage: 4.75 V to 5.25 V Sleep current: 250 µA Pin-compatible with ADL5902 and AD8363