High Voltage, Latch-Up Proof, 8-Channel Differential Multiplexer Features: Latch-up proof 3.5 pF off source capacitance 33 pF off drain capacitance 0.35 pC typical charge injection ±0.02 nA on channel leakage Low on resistance: 155 typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation VSS to VDD analog signal range Human body model (HBM) ESD rating - 8 kV I/O port to supplies

Fault Protection, 6 RON, SPST Switch with 0.6 k Feedback Channel Features: Analog output protection and detection solution Overvoltage protection up to 60 V on S and SFB pins Power off protection up to 60 V on S and SFB pins Integrated 0.6 k secondary feedback channel Known output under all conditions User enabled, power-on condition pulls source to 0 V Known state without digital inputs present Latch-up immune Optimized resistance for measurement channel and feedback channel Low on resistance of 6 typical on signal channel Ultraflat, on resistance on signal channel 3 mm 2 mm LFCS VSS to VDD 2 V signal range Fully specified at ±15 V, ±20 V, +12 V, and +36 V ±5 V to ±22 V dual supply operation 8 V to 44 V single-supply operation

CMOS, 2.5 Low Voltage Differential 8 Channel Multiplexer Features: +1.8 V to +5.5 V single supply ±2.5 V dual supply 2.5 ON resistance 0.5 ON resistance flatness 100 pA leakage currents 40 ns switching times Differential 8-to-1 multiplexer 28-lead TSSOP package Low-power consumption TTL/CMOS-compatible inputs

Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video Switch Features: Bandwidth: 300 MHz Low Insertion Loss and on Resistance: 5 typical On Resistance Flatness: 0.68 Typical Single 3 V/5 V Supply Operation Low Quiescent Supply Current: 1 nA Typical TTL/CMOS Compatible Fast switching times: tON, 7 ns; tOFF, 5 ns ESD protection 2 kV human body model (HBM) 200 V machine model (MM) 1 kV field-induced charged device model (FICDM)

Wideband, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Features: Wideband switch: −3 dB at 4 GHz Absorptive/reflective switches High off isolation (43 dB at 1 GHz) Low insertion loss (0.8 dB at 1 GHz) Single 1.65 V to 2.75 V power supply CMOS/LVTTL control logic 8-lead MSOP and tiny 3 mm × 3 mm LFCSP Low power consumption (<1 µA)

0 Hz/DC to 34 GHz, SPDT MEMS Switches Features: ADGM1001: DC to 34 GHz Insertion loss 0.8 dB (typical) at 18 GHz 1.5 dB (typical) at 34 GHz IIP3: 76 dBm (typical) Maximum RF power: 33 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 200 mA Actuation lifetime: 100 million cycles (minimum) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

0 Hz/DC to 16 GHz, SPDT MEMS Switches Features: ADGM1003: DC to 16 GHz Insertion loss 0.5 dB (typical) at 6 GHz 0.7 dB (typical) at 16 GHz Maximum RF power: 27 dBm On resistance: 3.4 Ω (typical) Maximum dc current: 75 mA Actuation lifetime: 100 million cycles (Typical) On switching time (tON): 200 μs (typical) Integrated 3.3 V driver for simple control with parallel and SPI Independently controllable switches Space-saving integrated passive components Small, 5.00 mm × 4.00 mm × 0.90 mm, 24-lead LGA package Temperature range: –40°C to +85°C

Silicon SPDT Switch, Reflective, 9 kHz to 44 GHz Features: Ultrawideband frequency range: 9 kHz to 44 GHz Reflective design Low insertion loss with impedance match 0.9 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.6 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.2 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTL to 0.1 dB final RF output): 3.4 μs 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5024 fast switching version

Silicon SPDT Switch, Reflective, 9 kHz to 44 GHz Features: Ultrawideband frequency range: 9 kHz to 44 GHz Reflective design Low insertion loss with impedance match 0.9 dB typical to 18 GHz 1.4 dB typical to 40 GHz 1.6 dB typical to 44 GHz Low insertion loss without impedance match 0.9 dB typical to 18 GHz 1.7 dB typical to 40 GHz 2.2 dB typical to 44 GHz High input linearity P1dB: 27.5 dBm typical IP3: 50 dBm typical High RF input power handling Through path: 27 dBm Hot switching: 27 dBm No low frequency spurious RF settling time (50% VCTL to 0.1 dB final RF output): 3.4 μs 12-terminal, 2.25 mm × 2.25 mm LGA package Pin compatible with the ADRF5024 fast switching version

Silicon SPDT Switch, Nonreflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Nonreflective design Low insertion loss: 1.2 dB to 18 GHz 1.7 dB to 26 GHz 2.4 dB to 40 GHz 3.8 dB to 44 GHz High isolation 55 dB to 18 GHz 53 dB to 26 GHz 50 dB to 40 GHz 45 dB to 44 GHz High input linearity P1dB: 27 dBm typical IP3: 53 dBm typical High power handling 24 dBm insertion loss path 24 dBm isolation path All off state control No low frequency spurious signals 0.1 dB RF settling time: 40 ns typical 20-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5027, low frequency cutoff versionADRF5026-EP supports defense and aerospace applications (AQEC standard) Download ADRF5026-EP data sheet (pdf) Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/21601 DSCC Drawing Number