GaAs MMIC SP4T Reflective Switch, 23 - 30 GHz Features: Broadband Performance: 23 - 30 GHz High Isolation: 26 dB Insertion Loss: 2.8 dB High Power Handling: >27 dBm 24 Lead 4 × 4mm SMT Package: 16mm2

0.4 CMOS, Dual DPDT Switch in WLCSP/LFCSP/TSSOP Features: 1.8 V to 5.5 V operation Ultralow on resistance 0.4 Ω typical 0.6 Ω maximum at 5 V supply Excellent audio performance, ultralow distortion 0.07 Ω typical 0.14 Ω maximum RON flatness High current carrying capability 400 mA continuous 600 mA peak current at 5 V Automotive temperature range: −40°C to +125°C Rail-to-rail switching operation Typical power consumption (<0.1 μW)

0 Hz/dc to 14 GHz, Single-Pole, Four-Throw MEMS Switch with Integrated Driver Features: Fully operational down to 0 Hz/dc On resistance: 2.9 Ω (maximum) Off leakage: 0.5 nA (maximum) −3 dB bandwidth 11 GHz (typical) for RF1, RF4 14 GHz (typical) for RF2, RF3 RF performance characteristics Insertion loss: 0.26 dB (typical) at 2.5 GHz Isolation: 24 dB (typical) at 2.5 GHz IIP3: 69 dBm (typical) RF power: 36 dBm (maximum) Actuation lifetime: 1 billion cycles (minimum) Hermetically sealed switch contacts On switching time: 75 μs (maximum) Integrated driver removes the need for an external driver Supply voltage: 3.0 V to 3.6 V CMOS-/LVTTL-compatible Parallel and SPI interface Independently controllable switches Switch is in an open state with no power supply present Requirement to avoid floating nodes on all RFx pins (see the Floating Node section in data sheet) 24-lead, 5 mm × 4 mm × 0.95 mm, LFCSP Operating temperature range: 0°C to 85°C

High Voltage, Latch-Up Proof, 16-Channel Multiplexer Features: Latch-up proof 3.5 pF off source capacitance 64 pF off drain capacitance 0.35 pC typical charge injection ±0.02 nA on channel leakage Low on resistance: 155 typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation VSS to VDD analog signal range Human body model (HBM) ESD rating - 8 kV all other pins

LC2MOS 15 V 4 Channel High Performance Analog Multiplexer Features: 44 V supply maximum ratings VSS to VDD analog signal range Low on resistance (100 Ω maximum) Low power (ISUPPLY < 75 µA) Fast switching Break-before-make switching action Plug-in replacement for DG408

High Voltage, Latch-Up Proof, 8-Channel Differential Multiplexer Features: Latch-up proof 3.5 pF off source capacitance 33 pF off drain capacitance 0.35 pC typical charge injection ±0.02 nA on channel leakage Low on resistance: 155 typical ±9 V to ±22 V dual-supply operation 9 V to 40 V single-supply operation VSS to VDD analog signal range Human body model (HBM) ESD rating - 8 kV I/O port to supplies

Fault Protection, 6 RON, SPST Switch with 0.6 k Feedback Channel Features: Analog output protection and detection solution Overvoltage protection up to 60 V on S and SFB pins Power off protection up to 60 V on S and SFB pins Integrated 0.6 k secondary feedback channel Known output under all conditions User enabled, power-on condition pulls source to 0 V Known state without digital inputs present Latch-up immune Optimized resistance for measurement channel and feedback channel Low on resistance of 6 typical on signal channel Ultraflat, on resistance on signal channel 3 mm 2 mm LFCS VSS to VDD 2 V signal range Fully specified at ±15 V, ±20 V, +12 V, and +36 V ±5 V to ±22 V dual supply operation 8 V to 44 V single-supply operation

CMOS, 2.5 Low Voltage Differential 8 Channel Multiplexer Features: +1.8 V to +5.5 V single supply ±2.5 V dual supply 2.5 ON resistance 0.5 ON resistance flatness 100 pA leakage currents 40 ns switching times Differential 8-to-1 multiplexer 28-lead TSSOP package Low-power consumption TTL/CMOS-compatible inputs

Low Voltage, 300 MHz Quad 2:1 Mux Analog HDTV Audio/Video Switch Features: Bandwidth: 300 MHz Low Insertion Loss and on Resistance: 5 typical On Resistance Flatness: 0.68 Typical Single 3 V/5 V Supply Operation Low Quiescent Supply Current: 1 nA Typical TTL/CMOS Compatible Fast switching times: tON, 7 ns; tOFF, 5 ns ESD protection 2 kV human body model (HBM) 200 V machine model (MM) 1 kV field-induced charged device model (FICDM)

Wideband, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches Features: Wideband switch: −3 dB at 4 GHz Absorptive/reflective switches High off isolation (43 dB at 1 GHz) Low insertion loss (0.8 dB at 1 GHz) Single 1.65 V to 2.75 V power supply CMOS/LVTTL control logic 8-lead MSOP and tiny 3 mm × 3 mm LFCSP Low power consumption (<1 µA)