RF Switch ICs 40W SPDT Failsafe Switch , 0.1 - 2.1 GHz

Low Power, 24-Bit, 31.25 kSPS, Sigma-Delta ADC with True Rail-to-Rail Buffers Features: Fast and flexible output rate: 1.25 SPS to 31.25 kSPS Channel scan data rate of 6.21 kSPS/channel (161 µs settling) Performance specifications 17.2 noise free bits at 31.25 kSPS 24 noise free bits at 5 SPS INL: ±2 ppm of FSR 85 dB rejection of 50 Hz and 60 Hz with 50 ms settling User configurable input channels 2 fully differential channels or 4 single-ended channels Crosspoint multiplexer On-chip 2.5 V reference (±2 ppm/°C drift) True rail-to-rail analog and reference input buffers Internal or external clock See data sheet for additional features

CMOS, 12-Bit Serial DACPORT Features: 12-Bit CMOS DAC with On-Chip Voltage Reference Output Amplifier Three Selectable Output Ranges -5 V to + 5 V, 0 V to +5 V, 0 V to +10 V Serial Interface 300 kHz DAC Update Rate Small Size: 16-Lead DIP or SOIC Nonlinearity: ±1/2 LSB Tmin to Tmax Low Power Dissipation: 100 mW Typical  

Single-Supply, Low Power, Precision FET Input Quad Buffer Features: Low power 250 μA maximum supply current per amplifier FET input 2 pA maximum input bias current at 25°C Extremely high input impedance Low noise 13 nV/√Hz voltage noise at 1 kHz 0.4 μV p-p voltage noise (0.1 Hz to 10 Hz) 0.8 fA/√Hz current noise at 1 kHz High dc precision 3 μV/°C maximum offset drift (B grade) 3 MHz bandwidth Unique pinout No leakage from inputs to supply pins Provides guarding capability Rail-to-rail output Single-supply operation Input range extends to ground Wide supply range Single-supply: 3 V to 36 V Dual-supply: ±1.5 V to ±18 V  Available in a compact 10-lead MSOP

10 MHz, G = 1, 10, 100, 1000 iCMOS Programmable Gain Instrumentation Amplifier Features: Small package: 10-lead MSOP Programmable gains: 1, 10, 100, 1000 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V Excellent dc performance High CMRR: 100 dB (minimum), G = 100 Low gain drift: 10 ppm/°C (maximum) Low offset drift: 1.2 µV/°C (maximum), G = 1000 See data sheet for additional features

0.1 GHz TO 2.5 GHz, 70 dB Logarithmic Detector / Controller Features: Wide bandwidth: 0.1 GHz to 2.5 GHz min High dynamic range: 70 dB to ±3.0 dB High accuracy: ±1.0 dB over 65 dB range (@ 1.9 GHz) Fast response: 40 ns full-scale typical Controller mode with error output Scaling stable over supply and temperature Wide supply range: 2.7 V to 5.5 V Low power: 40 mW at 3 V Power-down feature: 60 mW at 3 V

GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz Features: 32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHz P1dB compression output power: 31.5 dBm typical High output third-order intercept (IP3): 40 dBm typical High gain: 24 dB typical 50 Ω matched input/output Ceramic, 6 mm × 6 mm, high frequency, air cavity package

26 GHz, T Flip-Flop w/Reset Features: Supports Clock Frequencies up to 26 GHz Differential & Singe-Ended Operation Fast Rise and Fall Times: 18/17 ps Low Power Consumption: 270 mW typ. Propagation Delay: 95 ps Single Supply: -3.3V 16 Lead Ceramic 3×3mm SMT Package: 9mm2

Wideband VCO SMT w/Buffer Amplifier SMT, 6 - 12 GHz Features: Wide Tuning Bandwidth Pout: +1 dBm Low SSB Phase Noise: -95 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +5V @ 57 mA 24 Lead 4x4mm SMT Package: 16mm2

9 GHz to 12 GHz, GaAs, MMIC, I/Q Downconverter Features: Conversion gain: 11 dB (typical) at IFOUT = 100 MHz Image rejection: 25 dB (typical) at IFOUT = 100 MHz LO to RF isolation: 46 dB (typical) LO to IF isolation: 26 dB (typical) IF output frequency: dc to 3.5 GHz 32-lead, 4.9 mm × 4.9 mm ceramic leadless chip carrier