50 V, 130 kHz, 32.5 A, Robust, Over-The-Top Precision Op Amp Features: Ultrawide common-mode input range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: +3 V to +50 V (to ±25 V for PSRR) Low power supply current: 32.5 μA (typical) Low input offset voltage: ±60 μV maximum Low input offset voltage drift: ±1 μV/°C maximum (B grade) Low input voltage noise 6 Hz typical 1/f noise corner 1000 nV p-p typical at 0.1 Hz to 10 Hz GBP: 130 kHz typical for fTEST = 250 Hz Slew rate: 0.1 V/μs typical at ΔVOUT = 4 V Low power supply current shutdown: 20 μA maximum Low input offset current: ±300 pA maximum Large signal voltage gain: 120 dB minimum for ΔVOUT = 3.5 V CMRR: 120 dB minimum at VCM = −0.1 V to +70 V PSRR: 123 dB minimum at VSY = +3 V to ±25 V Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade) Shutdown feature available for single 6-lead TSOT and dual 10-lead LFCSP packages

50 V, 8 MHz, 1.5 mA per Channel, Robust, Over-The-Top, Precision Op Amps Features: Ultrawide common-mode range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: (VSY): +3.15 V to +50 V (±25 V for PSRR) Low supply current: 1.5 mA per channel (typical) Low input offset voltage: ±40 μV maximum Low input offset voltage drift: ±0.4 μV/°C maximum Low voltage noise: 1/f noise corner: 6 Hz typical 150 nV p-p typical at 0.1 Hz to 10 Hz 7 nV/√Hz typical at 100 Hz (en) High speed GBP: 8 MHz typical Slew rate: 5.5 V/μs typical at ΔVOUT = 25 V Low power shutdown: 20 μA maximum Low input bias current: ±10 nA maximum Large signal voltage gain: 120 dB minimum CMRR: 118 dB, minimum PSRR: 123 dB, minimum Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade)

OVP and EMI Protected, Precision, Low Noise and Bias Current Single Op Amp Features: Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature Input overvoltage protection to 32 V above and below the supply voltage rail Integrated EMI filter 70 dB typical rejection at 1000 MHz 90 dB typical rejection at 2400 MHz Rail-to-rail output swing Low supply current: 500 μA typical per amplifier Wide bandwidth Gain bandwidth product (AV = 100): 3.5 MHz typical Unity-gain crossover (AV = 1): 3.5 MHz typical −3 dB bandwidth (AV = 1): 6 MHz typical Dual-supply operation Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V Unity-gain stable No phase reversal Long-term offset voltage drift (10,000 hours): 2 μV typical Temperature hysteresis: 2 μV typical

Precision 1.7 g, 5 g, 18 g Dual-Axis iMEMS Accelerometer Features: High performance dual-axis accelerometer on a single IC chip 5 mm × 5 mm × 2 mm LCC package 1 mg resolution at 60 Hz Low power: 700 µA at VS = 5 V (typical) High zero g bias stability High sensitivity accuracy –40°C to +125°C temperature range X and Y axes aligned to within 0.1° (typical) BW adjustment with a single capacitor Single-supply operation 3500 g shock survival RoHS-compliant Compatible with Sn/Pb- and Pb-free solder processes

Single-Supply, Multichannel, 125 kSPS, 24-Bit, Sigma-Delta ADC with 10 V Inputs Features:24-bit ADC with integrated AFEFast and flexible output rate: 2.5 SPS to 125 kSPSChannel scan data rate of 24,845 SPS per channel (40.25 s settling)85 dB common mode rejection of 50 Hz and 60 Hz at 20 SPS per channel10 V inputs, either 8 differential or 16 single-endedVIN pin absolute maximum rating 65 VAbsolute input pin voltage up to 20 VMinimum 1 M impedanceOn-chip 2.5 V reference0.12% initial accuracy at 25C, 5 ppm/C (typical) driftInternal or external clockPower suppliesAVDD = 4.5 V to 5.5 VIOVDD = 2 V to 5.5 VTotal current consumption AVDD + IOVDD (IDD) = 10.4 mATemperature range: 40C to +105C3-wire or 4-wire serial digital interface (Schmitt trigger on SCLK)SPI, QSPI, MICROWIRE, and DSP compatible

Single-Supply, Low Power, Precision FET Input Quad Buffer Features: Low power 250 μA maximum supply current per amplifier FET input 2 pA maximum input bias current at 25°C Extremely high input impedance Low noise 13 nV/√Hz voltage noise at 1 kHz 0.4 μV p-p voltage noise (0.1 Hz to 10 Hz) 0.8 fA/√Hz current noise at 1 kHz High dc precision 3 μV/°C maximum offset drift (B grade) 3 MHz bandwidth Unique pinout No leakage from inputs to supply pins Provides guarding capability Rail-to-rail output Single-supply operation Input range extends to ground Wide supply range Single-supply: 3 V to 36 V Dual-supply: ±1.5 V to ±18 V  Available in a compact 10-lead MSOP

10 MHz, G = 1, 10, 100, 1000 iCMOS Programmable Gain Instrumentation Amplifier Features: Small package: 10-lead MSOP Programmable gains: 1, 10, 100, 1000 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V Excellent dc performance High CMRR: 100 dB (minimum), G = 100 Low gain drift: 10 ppm/°C (maximum) Low offset drift: 1.2 µV/°C (maximum), G = 1000 See data sheet for additional features

Fast, Voltage-Out, DC to 440 MHz, 95 dB Logarithmic Amplifier Features: Multistage demodulating logarithmic amplifier Voltage output, rise time <15 ns High current capacity: 25 mA into grounded RL 95 dB dynamic range: –91 dBV to +4 dBV Single supply of 2.7 V min at 8 mA typ DC to 440 MHz operation, ±0.4 dB linearity Slope of +24 mV/dB, intercept of –108 dBV Highly stable scaling over temperature Fully differential dc-coupled signal path 100 ns power-up time, 1 mA sleep current

6GHz High Linearity I/Q Demodulator with Wideband IF Amplifier Features:300MHz to 6GHz Operating FrequencyWide IF Bandwidth: DC to 1GHz (–1dB Bandwidth)High Mixer IIP3: 30dBm at 1.9GHzHigh Total OIP3: 40dBm at 1.9GHzHigh Total OIP2: 74dBm at 1.9GHzUser Adjustable OIP2 to 80dBmUser Adjustable Image Rejection to 60dBUser Adjustable DC Offset NullSerial InterfacePower Conversion Gain: 7.7dB at 1.9GHz31dB RF Attenuator with 1dB Step SizeRF Switch with 40dB Isolation at 1.9GHzSingle-Ended RF Inputs with On-Chip TransformerIF Amplifier Gain Adjustable in 8 StepsOperating Temperature Range (TC): –40°C to 105°C32-Lead 5mm × 5mm QFN Package

60V Synchronous Buck Multi-Chemistry Battery Charger Features: Wide Input Voltage Range: 4.5V to 60V Wide Battery Voltage Range: 2.4V to 60V Built-In Charge Algorithms for Lead-Acid and Li-Ion ±0.5% Float Voltage Accuracy ±5% Charge Current Accuracy Maximum Power Point Tracking Input Control NTC Temperature Compensated Float Voltage Two Open Drain Status Pins Thermally Enhanced 28-Lead 4mm × 5mm QFN Package