Medium Power Amplifier SMT, 5 - 20 GHz Features: Gain: 19 dB Saturated Power: +21 dBm @ 21% PAE Output IP3: +30 dBm Single Supply: +5V @ 114 mA 50 Ohm Matched Input/Output RoHS Compliant 3x3 mm SMT package

GaAs pHEMT MMIC Low Noise Amplifier, DC - 20 GHz Features: Noise Figure: 2.5 dB @ 10 GHz Gain: 14 dB @ 10 GHz P1dB Output Power: +16.5 dBm @ 10 GHz Supply Voltage: +8V @ 75 mA 50 Ohm Matched Input/Output 32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm2

1 dB LSB GaAs MMIC 3-Bit Digital Positive Control Attenuator, DC-6 GHz Features: 1 dB LSB Steps to 7 dB High IP3: +55 dBm ±0.25 dB Typical Bit Error Single Control Line Per Bit Single +5V Supply 16 Lead 3×3 mm SMT Package: 9 mm2

VCO SMT with Fo/2 & Divide-by-4, 8.45 - 9.55 GHz Features: Dual Output: Fo = 8.45 - 9.55 GHz Fo/2 = 4.225 - 4.775 GHz Phase Noise: -116 dBc/Hz @100 kHz Typ. Pout: +13 dBm No External Resonator Needed QFN Leadless SMT Package, 25 mm2

GaAs, pHEMT, MMIC, 1 W, Power Amplifier with Power Detector, 37 GHz to 40 GHz Features: 32 dBm typical saturated output power (PSAT) at 18% power added efficiency (PAE) at 39 GHz P1dB compression output power: 31.5 dBm typical High output third-order intercept (IP3): 40 dBm typical High gain: 24 dB typical 50 Ω matched input/output Ceramic, 6 mm × 6 mm, high frequency, air cavity package

26 GHz, T Flip-Flop w/Reset Features: Supports Clock Frequencies up to 26 GHz Differential & Singe-Ended Operation Fast Rise and Fall Times: 18/17 ps Low Power Consumption: 270 mW typ. Propagation Delay: 95 ps Single Supply: -3.3V 16 Lead Ceramic 3×3mm SMT Package: 9mm2

Wideband VCO SMT w/Buffer Amplifier SMT, 6 - 12 GHz Features: Wide Tuning Bandwidth Pout: +1 dBm Low SSB Phase Noise: -95 dBc/Hz @100 kHz No External Resonator Needed Single Positive Supply: +5V @ 57 mA 24 Lead 4x4mm SMT Package: 16mm2

9 GHz to 12 GHz, GaAs, MMIC, I/Q Downconverter Features: Conversion gain: 11 dB (typical) at IFOUT = 100 MHz Image rejection: 25 dB (typical) at IFOUT = 100 MHz LO to RF isolation: 46 dB (typical) LO to IF isolation: 26 dB (typical) IF output frequency: dc to 3.5 GHz 32-lead, 4.9 mm × 4.9 mm ceramic leadless chip carrier

5.6 GHz to 8.6 GHz, GaAs, MMIC, I/Q Downconverter Features: Conversion gain: 13 dB typical Image rejection: 32 dBc typical Input P1dB compression: −6 dBm typical Input IP3: 3 dBm typical, 6.0 GHz to 8.6 GHz Noise figure: 2 dB typical LO to RF isolation: 48 dBm typical LO to IF isolation: 13 dBm typical RF to IF isolation: 10 dBm typical Amplitude balance: 0.2 dB typical Phase balance: −2° typical RF return loss: 10 dB typical LO return loss: 15 dB typical IF return loss: 15 dB typical Exposed paddle, 4 mm × 4 mm, 24-lead, LFCSP

3.0 V to 5.5 V, 12 kV IEC ESD Protected, 500 kbps/50 Mbps RS-485 Transceiver Features: TIA/EIA RS-485 compliant over full supply range 3.0 V to 5.5 V operating voltage range on VCC 1.62 V to 5.5 V VIO logic supply option available ESD protection on the bus pins IEC 61000-4-2 ±12 kV contact discharge IEC 61000-4-2 ≥ ±12 kV air discharge HBM: ≥ ±30 kV Full hot swap support (glitch free power-up/power-down) High speed 50 Mbps data rate (ADM3065E/ADM3066E/ADM3067E/ADM3068E) Low speed 500 kbps data rate for long cables (ADM3061E/ADM3062E/ADM3063E) Full receiver short-circuit, open circuit, and bus idle fail-safe Extended temperature range up to 125°C PROFIBUS compliant at VCC ≥ 4.5 V Half duplex and full duplex models available Allows connection of up to 128 transceivers onto the bus Space-saving package options 10-lead, 3 mm × 3 mm LFCSP 8-lead and 10-lead, 3 mm × 3 mm MSOP 8-lead and 14-lead, narrow body SOIC