The HMC7911 is a compact gallium arsenide (GaAs), pseudomorphic(pHEMT), monolithic microwave integrated circuit(MMIC) upconverter in a RoHS compliant, low stress, injectionmolded plastic LFCSP package that operates from 17 GHz to20 GHz. This device provides a small signal conversion gain of18 dB with 30 dBc of sideband rejection. The HMC7911 uses avariable gain amplifier preceded by an in-phase/quadrature (I/Q)mixer that is driven by an active 2× local oscillator (LO) multiplier.IF1 and IF2 mixer inputs are provided, and an external 90° hybridis needed to select the required sideband. The I/Q mixer topologyreduces the need for filtering of the unwanted sideband. TheHMC7911 is a much smaller alternative to hybrid style singlesideband (SSB) upconverter assemblies, and it eliminates theneed for wire bonding by allowing the use of surface-mountmanufacturing techniques.Applications Point to point and point to multipoint radios Military radars, electronic warfare (EW), and electronic intelligence (ELINT) Satellite communications Sensors

The HMC7950 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC7950 is a wideband low noise amplifier that operates between 2 GHz and 28 GHz. The amplifier typically provides 15 dB of gain, 2.0 dB of noise figure, 26 dBm of output IP3, and 16 dBm of output power for 1 dB gain compression, requiring 64 mA from a 5 V supply. The HMC7950 is self biased with only a single positive supply needed to achieve a drain current, IDD, of 64 mA. The HMC7950 also has a gain control option, VGG2. The HMC7950 amplifier input/outputs are internally matched to 50 Ω and dc blocked. It comes in a 6 mm × 6 mm, 16-terminal LCC SMT ceramic package that is easy to handle and assemble.APPLICATIONS Test instrumentation Military and space

The HMC7992 is a general-purpose, nonreflective, 0.1 GHz to 6.0 GHz, silicon, single-pole, four-throw (SP4T) switch in aleadless, surface-mount package. The switch is ideal for cellular infrastructure applications, offers high isolation of 45 dB typical at 2 GHz, and a low insertion loss of 0.6 dB at 2 GHz. It offers excellent power handling capability up to 6.0 GHz, with inputpower of 1 dB compression point (P1dB) of 35 dBm at 5 V operation. The HMC7992 has good low frequency input power handling below 0.1 GHz and can operate well down to 10 kHz, with a typical 1 dB compression of 21 dBm and an IIP3 of 37 dBm at 1 MHz.The on-chip circuitry allows the HMC7992 to operate at a single, positive supply voltage range from 3.3 V to 5 V, and as well as a single, positive control voltage from 0 V to 1.8 V/3.3 V/5.0 V. A 2:4 decoder integrated in the switch requires only two controlled input signals, with a positive control voltage range from 0 V to 1.8 V/3.3 V/5.0 V, to select one of the four radio frequency (RF)paths.Applications Cellular/4G infrastructure Wireless infrastructure Automotive telematics Mobile radios Test equipment

The HMC802ALP3E is a broadband bidirectional 1-bitGaAs IC digital attenuator in a low cost leadless sur-face mount package. This single positive control linedigital attenuator utilizes off chip AC ground capac-itors for near DC operation, making it suitable for awide variety of RF and IF applications. Covering DCto 10 GHz, the insertion loss is less than 3 dB typicaland attenuation accuracy is excellent at ±0.6 dB typ-ical. The attenuator also features a high IIP3 of +55dBm. One TTL/CMOS control input is used to selectthe attenuation state and a single Vdd bias of +5V isrequired. Applications Test equipment and sensors ISM, MMDS, WLAN, WiMAX, WiBro Microwave radio & VSAT Cellular infrastructure

The HMC8400 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The HMC8400 is a wideband low noise amplifier that operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, a 2 dB noise figure, 26.5 dBm output IP3, and 14.5 dBm of output power at 1 dB gain compres-sion, requiring 67 mA from a 5 V supply. The HMC8400 is self biased with only a single positive supply needed to achieve a drain current IDD of 67 mA. The HMC8400 also has a gain control option, VGG2. The HMC8400 amplifier input/outputs are internally matched to 50 Ω and dc blocked, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military and space Telecommunications infrastructure Fiber optics

The HMC862A is a low noise, programmable frequency divider in a 3 mm × 3 mm, leadless, surface-mount package. The frequency divider, N, can be programmed to divide from 1, 2, 4, or 8 in the 0.1 GHz to 24 GHz input frequency range.The low phase noise, wide frequency range, and flexible division ratio make this device ideal for high performance and wideband communication systems.Applications Satellite communication systems Point to point and point to multipoint radios Military applications Test equipment

The HMC939ALP4E is a 5-bit digital attenuator with a 31 dBattenuation control range in 1 dB steps.The HMC939ALP4E offers optimum insertion loss, attenuationaccuracy, and input linearity over the specified frequency rangefrom 100 MHz to 33 GHz.The HMC939ALP4E requires dual supply voltages, VDD = +5 Vand VSS = −5 V, and provides CMOS-/TTL-compatible parallelcontrol interface by incorporating an on-chip driver.The HMC939ALP4E comes in a RoHS compliant, compact,4 mm × 4 mm LFCSP package. See HMC939A-DIE for the dieversion of HMC939ALP4E.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The HMC941A die is a broadband 5-bit GaAs IC digitalattenuator MMIC chip. Covering 0.1 to 30 GHz, theinsertion loss is less than 4 dB typical. The attenuatorbit values are 0.5 (LSB), 1, 2, 4, 8, for a total attenuationof 15.5 dB. Attenuation accuracy is excellentat less than ± 0.5 dB typical step error with an IIP3of +45 dBm. Five control voltage inputs, toggledbetween +5V and 0V, are used to select each attenuationstate.APPLICATIONS Fiber optics and broadband telecom Microwave radio and VSAT Military radios, radar and ECM Space applications

The HMC951B is a compact GaAs MMIC I/Q downconverter in a leadless RoHS compliant SMT package. This device provides a small signal conversion gain of 13 dB with a noise figure of 2 dB and 24 dB of image rejection across the frequency band. The HMC951B utilizes an LNA followed by an image reject mixer which is driven by an LO buffer amplifier. The image reject mixer eliminates the need for a filter following the LNA, and removes thermal noise at the image frequency.I and Q mixer outputs are provided and an external 90° hybrid is needed to select the required sideband. The HMC951B is a much smaller alternative to hybrid style image reject mixer downconverter assemblies, and is compatible with surface mount manufacturing techniques.Applications Point-to-Point & Point-to-Multi-Point Radio Military Radar, EW & ELINT Satellite Communications

The SC2200 belongs to the 4th-generation family of RF PA linearizers (RFPAL) that provides increased integration and functionality over the previous generations. The device is a dual-path linearizer that is a fully-adaptive, RFIN/RFOUT predistortion linearization solution optimized for a wide range of amplifiers, power levels, and communication protocols. It supports 2G to 4G standards (FDD and TDD) from 698MHz to 2700MHz as well as an expanded range of signal bandwidths from 60MHz down to 1.2MHz. The SC2200 accepts single-ended RF signals to eliminate baluns and features a mirrored pinout facilitating design of both paths. The device uses the PA output and input signals to adaptively generate an optimized correction function to minimize the PA’s distortion. Using RF-domain analog signal processing enables the SC2200 to operate over wide bandwidths and with very low power consumption. The dual linearizer is optimized for high-performance MIMO applications, including small cells, active antenna, and distributed antenna systems.SC2200 and SC1894 RF Power Amplifier Linearizers RF Power Amplifier Linearization Technology ApplicationsAmplifier: Class A/AB, DohertyAverage PA Output Power Examples: Cellular Infrastructure: 27dBm to 40dBmBTS Amplifiers, RRH, Booster Amplifiers, Repeaters, Small Cells, Microcells, Picocells, DAS, AAS and MIMO SystemsCellular InfrastructurePA Process: LDMOS, GaN, HBT, GaAs and InGaPSingle/Multicarrier, Multistandard: CDMA/EVDO, TD-SCDMA, WiMAX, WCDMA/HSDPA, LTE, and TD-LTEWide Range of PAs and Output Power