The HMC7044 is a high performance, dual-loop, integer-N jitter attenuator capable of performing reference selection and generation of ultralow phase noise frequencies for high speed data converters with either parallel or serial (JESD204B type) interfaces. The HMC7044 features two integer mode PLLs and overlapping on-chip VCOs that are SPI-selectable with wide tuning ranges around 2.5 GHz and 3 GHz, respectively. The device is designed to meet the requirements of GSM and LTE base station designs, and offers a wide range of clock management and distribution features to simplify baseband and radio card clock tree designs. The HMC7044 provides 14 low noise and configurable outputs to offer flexibility in interfacing with many different components including data converters, field-programmable gate arrays (FPGAs), and mixer local oscillators (LOs).The DCLK and SYSREF clock outputs of the HMC7044 can be configured to support signaling standards, such as CML, LVDS, LVPECL, and LVCMOS, and different bias settings to offset varying board insertion losses.APPLICATIONS JESD204B clock generation Cellular infrastructure (multicarrier GSM, LTE, W-CDMA) Data converter clocking Microwave baseband cards Phase array reference distribution

The HMC8100LP6JE is a highly integrated IF receiver chip that converts radio frequency (RF) input signals ranging from 800 MHz to 4000 MHz down to a single ended intermediate frequency (IF) signal of 140 MHz at its output. The IF receiver chip is housed in a compact 6 mm x 6 mm LFCSP package and supports complex modulations up to 1024 QAM. The HMC8100LP6JE device includes two VGAs, three power detectors, a programmable AGC block, and selected integrated bandpass filters with 14 MHz, 28 MHz, 56 MHz, and 112 MHz bandwidth. The HMC8100LP6JE also supports baseband IQ interfaces after the mixer so that the chips can be used in the full ODU configuration.The HMC8100LP6JE supports all of the standard microwave frequency bands from 6 to 42 GHz.Applications Point to point communications Satellite communications Wireless microwave backhaul systemsPlease also view complimentary product HMC8200, Intermediate Frequency Transmitter 800 MHz - 4000 MHz.

The HMC833LP6GE is a low noise, wide band, Fractional-N Phase-Locked-Loop (PLL) that features an integrated Voltage Controlled Oscillator (VCO) with a fundamental frequency of 1500 MHz - 3000 MHz, and an integrated VCO Output Divider (divide by 1/2/4/6.../60/62) and doubler, that together allow the HMC833LP6GE to generate frequencies from 25 MHz to 6000 MHz. The integrated Phase Detector (PD) and delta-sigma modulator, capable of operating at up to 100 MHz, permit wider loop-bandwidths with excellent spectral performance.The HMC833LP6GE features industry leading phase noise and spurious performance, across all frequencies, that enable it to minimize blocker effects, and improve receiver sensitivity and transmitter spectral purity. The superior noise floor (< -170 dBc/Hz) makes the HMC833LP6GE an ideal source for a variety of applications - such as; LO for RF mixers, a clock source for high-frequency data-converters, or a tunable reference source for ultra-low spurious applications.Additional features of the HMC833LP6GE include RF output power control from 0 to 9 dB (3 dB steps), output Mute function, and a delta-sigma modulator Exact Frequency Mode which enables users to generate output frequencies with 0 Hz frequency error.Applications Cellular Infrastructure Microwave Radio WiMax, WiFi Communications Test Equipment CATV Equipment DDS Replacement Military Tunable Reference Source for?Spurious- Free Performance

The HMC835LP6GE is a low noise, wide band, Fractional-N PLL that features an integrated VCO with a fundamental frequency of 2020 to 4100 MHz, and an integrated VCO Output Divider (divide by 2/4/6/.../60/62) that together enable the HMC835LP6GE to generate frequencies from 33 MHz to 4100 MHz. Integrated Phase Detector (PD) and a deltasigma modulator capable of operating at up to 100 MHz enable wider loop-bandwidths, faster frequency changes along with excellent spectral performance.Two independent RF outputs, with independent gain control, enable the HMC835LP6GE to distribute identical frequency and phase signals to multiple destinations, at optimal signal levels tailored to each output.External VCO input, allows the HMC835LP6GE to lock external VCOs, and enables cascaded LO architectures for MIMO radio applications. Two separate Charge Pump (CP) outputs enable separate loop filters optimized for both integrated and external VCOs, and seamless switching between integrated or external VCOs during operation. Programmable RF output phase feature can further phase adjust and synchronize multiple HMC835LP6GEs enabling scalable MIMO and beam-forming radio architectures.Additional features include configurable output mute function that mutes RF outputs during frequency changes, Exact Frequency Mode that enables the HMC835LP6GE to generate fractional frequencies with 0 Hz frequency error, and the ability to synchronously change frequencies without changing the phase of the output signal.Applications MIMO Radio Architectures Cellular Infrastructure Cellular backhaul Communications Test Equipment CATV Equipment Phased Array Applications? DDS Replacement

The HMC1019ALP4E is a broadband 5-bit GaAs IC digital attenuator in a low cost leadless surface mount package. Covering 0.1 to 30.0 GHz, the insertion loss is less than 4.0 dB typical. The attenuator bit values are 0.5 (LS B), 1, 2, 4, 8 for a total attenuation of 15.5 dB. Attenuation accuracy is excellent at ?0.3 dB typical step error with an IIP3 of +45 dBm. The control interface is CMOS/TTL compatible and accepts a three wire serial input. The HMC1019ALP4E features a user selectable power up state and a serial output port for cascading other Analog Devices serial controlled components.APPLICATIONS Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications Sensors Test & Measurement Equipment

The HMC1082CHIP is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), driver amplifier that operates from 5.5 GHz to 18 GHz. The HMC1082CHIP provides a typical gain of 24 dB, 36 dBm output IP3, and 25.5 dBm of output power for 1 dB compression, requiring only 220 mA from a 5 V supply voltage. The saturated output power (PSAT) is 26 dBm with 24% power added efficiency (PAE).The HMC1082CHIP is an ideal driver amplifier for a wide range of applications including point to point radios from 5.5 GHz to 18 GHz and marine radars at 9 GHz. The HMC1082CHIP can also be used for 6 GHz to 18 GHz EW and ECM applications.APPLICATIONS Software defined radios Electronics warfare (EW) Radar applications Electronic countermeasures (ECMs)

The HMC1162 is a monolithic microwave integrated circuit (MMIC), voltage controlled oscillator (VCO) that integrates the resonator, a negative resistance device, and varactor diodes, and features a half frequency output.Because of the monolithic construction of the oscillator, the output power and phase noise performance are excellent over temperature.The power output is 11 dBm typical from a 5 V supply voltage. The VCO is housed in a RoHS-compliant, 32-lead LFCSP and requires no external matching components.APPLICATIONS Point to point and multipoint radios Test equipment and industrial controls Very small aperture terminals (VSATs)

The ADRF5021 is a general-purpose single-pole, double-throw (SPDT) switch manufactured using a silicon process. It comes in a 3 mm ? 3 mm, 20-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 9 kHz to 30 GHz.This broadband switch requires dual supply voltages, +3.3 V and ?2.5 V, and provides CMOS/LVTTL logic-compatible control.Applications Test instrumentation Microwave radios and very small aperture terminals (VSATs) Military radios, radars, electronic counter measures (ECMs) Broadband telecommunications systems

The ADRF5024 is a reflective, single-pole double-throw (SPDT) switch manufactured in the silicon process.This switch operates from 100 MHz to 44 GHz with better than 1.7 dB of insertion loss and 35 dB of isolation. The ADRF5024 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.The ADRF5024 draws a low current of 14 ?A on the positive supply of +3.3 V and 120 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)compatible controls.The ADRF5024 is pin-compatible with the ADRF5025, low frequency cutoff version, which operates from 9 kHz to 44 GHz.The ADRF5024 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.The ADRF5024 comes in a 2.25 mm ? 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate between ?40?C to +105?C.The ADRF5024-EP supports defense and aerospace applications (AQEC).Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)

The ADRF5025 is a reflective single-pole double-throw (SPDT) switch, manufactured in silicon process.This switch operates from 9 kHz to 44 GHz with better than 1.6 dB of insertion loss and 35 dB of isolation. The ADRF5025 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.The ADRF5025 draws a low current of 14 ?A on the positive supply of +3.3 V and 120 ?A on negative supply of ?3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.The ADRF5025 is pin compatible with the ADRF5024, low frequency cutoff version, which operates from 100 MHz to 44 GHz.The ADRF5025 RF ports are designed to match a characteristic impedance of 50 ?. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.The ADRF5025 comes in a 2.25 mm ? 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate from ?40?C to +105?C.Applications Industrial scanners Test and instrumentation Cellular infrastructure: 5G mmWave Military radios, radars, electronic counter measures (ECMs) Microwave radios and very small aperture terminals (VSATs)