Silicon SPDT Switch, Nonreflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Nonreflective design Low insertion loss: 1.2 dB to 18 GHz 1.7 dB to 26 GHz 2.4 dB to 40 GHz 3.8 dB to 44 GHz High isolation 55 dB to 18 GHz 53 dB to 26 GHz 50 dB to 40 GHz 45 dB to 44 GHz High input linearity P1dB: 27 dBm typical IP3: 53 dBm typical High power handling 24 dBm insertion loss path 24 dBm isolation path All off state control No low frequency spurious signals 0.1 dB RF settling time: 40 ns typical 20-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5027, low frequency cutoff versionADRF5026-EP supports defense and aerospace applications (AQEC standard) Download ADRF5026-EP data sheet (pdf) Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/21601 DSCC Drawing Number

Silicon SPDT Switch, Nonreflective, 100 MHz to 44 GHz Features: Ultrawideband frequency range: 100 MHz to 44 GHz Nonreflective design Low insertion loss: 1.2 dB to 18 GHz 1.7 dB to 26 GHz 2.4 dB to 40 GHz 3.8 dB to 44 GHz High isolation 55 dB to 18 GHz 53 dB to 26 GHz 50 dB to 40 GHz 45 dB to 44 GHz High input linearity P1dB: 27 dBm typical IP3: 53 dBm typical High power handling 24 dBm insertion loss path 24 dBm isolation path All off state control No low frequency spurious signals 0.1 dB RF settling time: 40 ns typical 20-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5027, low frequency cutoff versionADRF5026-EP supports defense and aerospace applications (AQEC standard) Download ADRF5026-EP data sheet (pdf) Supports defense and aerospace applications (AQEC standard) Military temperature range (−55°C to +105°C) Controlled manufacturing baseline 1 assembly/test site 1 fabrication site Product change notification Qualification data available on request V62/21601 DSCC Drawing Number

Nonreflective, 9 kHz to 44 GHz Silicon SP4T Switch Features: Ultrawideband frequency range: 9 kHz to 44 GHz Nonreflective 50 Ω design Low insertion loss: 1.5 dB at 18 GHz 2.4 dB at 40 GHz 2.5 dB at 44 GHz High isolation: 44 dB at 18 GHz 39 dB at 40 GHz 36 dB at 44 GHz High input linearity: P0.1dB: 26 dBm typical IP3: 48 dBm typical High power handling 24 dBm through path 24 dBm terminated path All off state control Logic select control No low frequency spurs Settling time (0.1 dB final RF output): 6 μs 24-terminal, 3 mm × 3 mm LGA package Pin compatible with ADRF5042, fast switching version

Microprocessor Supervisory Circuit in 3-Lead SC70, Active-Low Open-Drain Output Features: Specified over temperature Low power consumption (17 μA) Precision voltage monitor: 2.5 V, 3 V, 3.3 V, 5 V options Reset assertion down to 1 V VCC 140 ms minimum power-on reset Open-drain RESET output

Supervisory Circuit with Manual Reset, Active-Low Open-Drain and Active-High Push-Pull Reset Outputs Features: 27 reset threshold options 2.5 V to 5 V in 100 mV increments 4 reset timeout options 1 ms, 20 ms, 140 ms, and 1120 ms (minimum) 4 watchdog timeout options 6.3 ms, 102 ms, 1.6 sec, and 25.6 sec (typical) Manual reset input Multiple reset output options Low power consumption Specified over wide temperature range (−40°C to +125°C) Qualified for automotive applications 5-lead SOT-23 package

Ultralow Power Voltage Detector with Disable Input and Low Threshold Voltages Features: Ultralow power consumption with ICC = 92 nA (typical) Precision, low voltage monitoring Pretrimmed voltage monitoring threshold options 20 options from 0.5 V to 1.9 V ±1.3% threshold accuracy over full temperature range Output disable input 23 µs to 26 µs typical propagation delay Open-drain type output Power supply glitch immunity Available in a 1.46 mm × 0.96 mm WLCSP Operational temperature range: −40°C to +85°C

K Band Quadrature Demodulator with Integrated Fractional-N PLL and VCO Features: Fractional-N synthesizer with low phase noise VCO K band quadrature demodulator Programmable via 4-wire SPI RF operating frequency range: 17 GHz to 22 GHz LO internal frequency range: 17 GHz to 21.5 GHz Double sideband noise figure: 5 dB at maximum conversion gain Output integrated phase noise, 1 kHz to 10 MHz: <1° Maximum conversion gain of >50 dB Conversion gain control range of >50 dB IM3 of −54 dBc at −30 dBm composite input level, ΔfRF = 1 MHz 3 baseband, SPI-selectable LPFs with corner frequencies of: 125 MHz, 250 MHz, and 500 MHz on each baseband path

2 GHz to 18 GHz, Digitally Tunable, High-Pass and Low-Pass Filter Features: Digitally tunable, multioctave, high-pass and low-pass tuning Independent 3 dB frequency control for up to 4 GHz of bandwidth Optimal wideband rejection: 35 dB Single chip replacement for discrete filter banks Compact 9 mm × 9 mm, 56-terminal LGA packageENHANCED PRODUCT FEATURES Supports defense and aerospace applications (AQEC standard Military temperature range of −55°C to +105°C Controlled manufacturing baseline One assembly and test site One fabrication site Production change notification Qualification data available on request V62/21604

5.7 kV RMS/1.5 kV RMS, Quad-Channel LVDS 2.5 Gigabit Isolator (0 Reverse Channels) Features: 5.7 kV rms and 1.5 kV rms LVDS isolators Complies with TIA/EIA-644-A LVDS signal levels Quad-channel configuration Any data rate up to 2.5 Gbps switching with low jitter 10 Gbps total bandwidth across four channels 2.15 ns typical propagation delay Typical jitter: 0.82 ps rms random, 40 ps total peak Lower power 1.8 V supplies ±8 kV IEC 61000-4-2 ESD protection across isolation barrier High common-mode transient immunity: 100 kV/μs typical Safety and regulatory approvals (28-lead SOIC_W_FP package) UL (pending): 5700 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A (pending) VDE certificate of conformity (pending) DIN V VDE V 0884-11 (VDE V 0884-11):2017-01 VIORM = 849 VPEAK (working voltage) Enable or disable refresh (low speed output correctness check) Operating temperature range: −40°C to +125°C 28-lead, wide-body, finer pitch SOIC_W_FP package with 8.3 mm creepage and clearance or 6 mm × 6 mm LFCSP package with 1.27 mm creepage and clearance

5 kV RMS/3.75 kV RMS, Dual LVDS Gigabit Isolator (0 Reverse Channels) Features: 5 kV rms and 3.75 kV rms LVDS isolators Complies with TIA/EIA-644-A LVDS standard Multiple dual-channel configurations Any data rate up to 1.1 Gbps switching with low jitter 4 ns typical propagation delay 2.6 ps rms typical random jitter, rms 90 ps typical peak-to-peak total jitter at 1.1 Gbps 2.5 V or 3.3 V supplies −75 dBc power supply ripple rejection, phase spur level Glitch immunity ±8 kV IEC 61000-4-2 ESD protection across isolation barrier High common-mode transient immunity: >25 kV/μs Passes EN 55022 Class B radiated emissions limits with 1.1 Gbps PRBS Safety and regulatory approvals (20-lead SOIC_W package) UL (pending): 5000 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A (pending) VDE certificate of conformity (pending) DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 VIORM = 424 VPEAK Fail-safe output high for open, short, and terminated input conditions (ADN4655/ADN4656) Operating temperature range: −40°C to +125°C 7.8 mm minimum creepage and clearance