RapID Platform Generation 2 (RPG2) Network Interface Features: Configurable industrial protocol support PROFINET RT (Class B) PROFINET IRT (Class C): coming soon EtherNet/IP with DLR EtherCAT All protocols precertified Configurable applications processor interface UART: 115,200 bps to 1,000,000 bps Ethernet at 10 Mbps or 100 Mbps SPI follower: 10 MHz maximum clock I2C, QSPI, and CAN: future option Industrial Ethernet interface-compliant to IEEE 802.3, 10Base or 100Base transmit half and full duplex Single 3.3 V power supply, 840 mW Cycle time down to 1 ms (cycle times vary based on protocol, link type, and application data) 194-ball chip-scale package BGA form factor RoHS 3 compliant –40°C to +85°C industrial temperature range

RapID Platform Generation 2 (RPG2) Network Interface Features: Configurable industrial protocol support PROFINET RT (Class B) PROFINET IRT (Class C): coming soon EtherNet/IP with DLR EtherCAT All protocols precertified Configurable applications processor interface UART: 115,200 bps to 1,000,000 bps Ethernet at 10 Mbps or 100 Mbps SPI follower: 10 MHz maximum clock I2C, QSPI, and CAN: future option Industrial Ethernet interface-compliant to IEEE 802.3, 10Base or 100Base transmit half and full duplex Single 3.3 V power supply, 840 mW Cycle time down to 1 ms (cycle times vary based on protocol, link type, and application data) 194-ball chip-scale package BGA form factor RoHS 3 compliant –40°C to +85°C industrial temperature range

Up to 1 GHz Dual-SHARC+ DSP w/ Integrated Arm Cortex-A5 Features:SHARC+ Core Infrastructure 800 MHz (max) or 1 GHz (max) Core clock frequency 2x 640KB on-chip Level 1 (L1) SRAM memory (with parity) increases low latency performance 32-bit, 40-bit & 64-bit floating point support 32-bit fixed point Byte, short-word, word, long-word addressedArm Core Infrastructure: 1 GHz Arm Cortex-A5 (with Neon/FPU) 32 kByte/32 kByte L1 Instr./Data Cache 256 kByte L2 CacheMemory 2048 KB on-chip Level 2 (L2) SRAM with ECC protection - eliminates need for external memory in many use cases Level 3 (L3) interface optimized for low system power, providing 16-bit interface to DDR3 (supporting 1.35 V capable DDR3L devices)16-bit DDR/DDR3L Memory Controller 1.35V support for DDR3LAdvanced Hardware Accelerators Enhanced FIR/IIR offload engines running at Core clock frequency for added processing power Security Crypto Engines with OTPPowerful DMA SystemInnovative Digital Audio Interface (DAI) includes: 8x Full SPORT interfaces w/TDM & I2S modes 2x S/PDIF Rx/Tx, 8 ASRC pairs 8x Precision Clock Generators 2x 4-channel PDM Mic Inputs 40 BuffersOther Peripheral Connectivity / Interfaces: 2x Quad SPI, 1x Octal SPI MLB 3-pin / 6-pin 6x I2C,3x UARTs 2x Link Ports 16x General Purpose Timer, 1x General Purpose Counter 3x Watchdog Timers ePPI USB 2.0 HS OTG Controller 10/100 EMAC 10/100/1000 EMAC w/AVB and 1588 2x CAN FD 8-ch 12bit Housekeeping ADC 135 GPIO pins, 40 DAI pins Thermal SensorPackage 17mm x 17mm (0.8mm pitch) 400-ball FCBGAAdditional Features Security and Protection Crypto hardware accelerators Fast secure boot with IP protection Enhanced FIR and IIR accelerators running up to 1 GHz AEC-Q100 qualified for automotive applications

67 dB SMT SDLVA, 0.5 - 18.5 GHz Features: High Logging Range: 67 dB (-62 to +5 dBm) Output Frequency Flatness: ±2 dB Log Linearity: ±2 dB Fast Rise/Fall Times: 5/15 ns Single Positive Supply: +3.3V ESD Sensitivity (HBM): Class 1A 24 Lead 4x4mm SMT Package: 16mm2

GaAs MMIC SP4T Reflective Switch, 23 - 30 GHz Features: Broadband Performance: 23 - 30 GHz High Isolation: 26 dB Insertion Loss: 2.8 dB High Power Handling: >27 dBm 24 Lead 4 × 4mm SMT Package: 16mm2

GaAs MMIC SP4T Reflective Switch, 23 - 30 GHz Features: Broadband Performance: 23 - 30 GHz High Isolation: 26 dB Insertion Loss: 2.8 dB High Power Handling: >27 dBm 24 Lead 4 × 4mm SMT Package: 16mm2

GaAs MMIC SP4T Reflective Switch, 23 - 30 GHz Features: Broadband Performance: 23 - 30 GHz High Isolation: 26 dB Insertion Loss: 2.8 dB High Power Handling: >27 dBm 24 Lead 4 × 4mm SMT Package: 16mm2

10 W (40 dBm), 0.01 GHz to 1.1 GHz, GaN Power Amplifier Features: High small signal gain: 20 dB typical POUT: 41.5 dBm typical at PIN = 27 dBm High PAE: 60% typical at PIN = 27 dBm Instantaneous bandwidth: 0.01 GHz to 1.1 GHz across all frequencies Supply voltage: VDD = 28 V at a quiescent current of 100 mA Internal prematching Simple and compact external tuning for optimal performance 5 mm × 5 mm, 32-lead LFCSP

9.25 GHz to 10.10 GHz MMIC VCO with Half Frequency Output Features: Dual output fOUT = 9.25 GHz to 10.10 GHz fOUT/2 = 4.625 GHz to 5.050 GHz Power output (POUT): 11 dBm (typical) Single-sideband (SSB) phase noise: −115 dBc/Hz at 100 kHz No external resonator needed RoHS-compliant, 5 mm × 5 mm LFCSP: 25 mm2

GaAs MMIC DBL-BAL Mixer, 3.5 - 8 GHz Features: Passive Double-Balanced Topology Input IP3 : +17 dBm Low Conversion Loss: 7 dB LO / RF Isolation: 38 dB LO / IF Isolation: 32 dB Upconverter & Downconverter Applications