Supervisory Circuit with Manual Reset, Active-Low Open-Drain and Active-High Push-Pull Reset Outputs Features: 27 reset threshold options 2.5 V to 5 V in 100 mV increments 4 reset timeout options 1 ms, 20 ms, 140 ms, and 1120 ms (minimum) 4 watchdog timeout options 6.3 ms, 102 ms, 1.6 sec, and 25.6 sec (typical) Manual reset input Multiple reset output options Low power consumption Specified over wide temperature range (−40°C to +125°C) Qualified for automotive applications 5-lead SOT-23 package

Ultralow Power Voltage Detector with Disable Input and Low Threshold Voltages Features: Ultralow power consumption with ICC = 92 nA (typical) Precision, low voltage monitoring Pretrimmed voltage monitoring threshold options 20 options from 0.5 V to 1.9 V ±1.3% threshold accuracy over full temperature range Output disable input 23 µs to 26 µs typical propagation delay Open-drain type output Power supply glitch immunity Available in a 1.46 mm × 0.96 mm WLCSP Operational temperature range: −40°C to +85°C

K Band Quadrature Demodulator with Integrated Fractional-N PLL and VCO Features: Fractional-N synthesizer with low phase noise VCO K band quadrature demodulator Programmable via 4-wire SPI RF operating frequency range: 17 GHz to 22 GHz LO internal frequency range: 17 GHz to 21.5 GHz Double sideband noise figure: 5 dB at maximum conversion gain Output integrated phase noise, 1 kHz to 10 MHz: <1° Maximum conversion gain of >50 dB Conversion gain control range of >50 dB IM3 of −54 dBc at −30 dBm composite input level, ΔfRF = 1 MHz 3 baseband, SPI-selectable LPFs with corner frequencies of: 125 MHz, 250 MHz, and 500 MHz on each baseband path

46 dBm (40 W), 2.7 GHz to 3.5 GHz, GaN Power Amplifier Features: Frequency range: 2.7 GHz to 3.5 GHz POUT: 46 dBm typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Power gain: 25 dB typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Small signal gain: 34.5 dB typical at 2.7 GHz to 3.1 GHz PAE: 56% typical with PIN = 21 dBm at 2.7 GHz to 3.1 GHz Supply voltage: VDD = 50 V at IDQ = 300 mA with 10% duty cycle 32-lead, 5 mm × 5 mm LFCSP_CAV package

GaAs, pHEMT, MMIC,1/2 W, 20 GHz to 44 GHz, Power Amplifier Features: Output P1dB: 28 dBm (typical at 34 GHz to 44 GHz) PSAT: 30 dBm (typical at 20 GHz to 34 GHz) Gain: 15 dB (typical at 34 GHz to 44 GHz) IP3: 40 dBm (typical) Supply voltage: 5 V at 600 mA Die size: 2.75 mm × 1.805 mm × 0.1 mm

18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm (>1 W), MMIC Power Amplifier Features:ADPA7005AEHZ Output P1dB: up to 31 dBm typical PSAT: up to 32 dBm typical Gain: up to 15.5 dB typical Output IP3: up to 42.5 dBm typical Supply voltage: 5 V at 1400 mA 50 matched input/output 18-terminal, 7 mm × 7 mm LCC_HS package Integrated power detectorADPA7005CHIP Output P1dB: 31 dBm typical at 20 GHz to 34 GHz PSAT: 32 dBm typical at 20 GHz to 34 GHz Gain: 17 dB typical at 20 GHz to 34 GHz Output IP3: 41 dBm typical at 20 GHz to 34 GHz Supply voltage: 5 V at 1200 mA maximum 50 Ω matched input/output Die size: 3.75 mm × 3.47 mm × 0.1 mm

18 GHz to 44 GHz, GaAs, pHEMT, MMIC, 1/2 W Power Amplifier Features: Output P1dB: 29 dBm PSAT: 29.5 dBm Gain: 23.5 dB Output IP3: 38 dBm Supply voltage: 5 V at 800 mA Integrated power detector 50 Ω matched input/output Die size: 2.750 mm × 1.805 mm × 0.102 mm

Ultra-Low-Noise, High-Accuracy 2.5V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Ultra-Low-Noise, High-Accuracy 4.096V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours

Ultra-Low-Noise, High-Accuracy 4.096V Voltage Reference Features: Maximum temperature coefficient (TCVOUT): 0.8 ppm/°C (D grade 0°C to 70°C) 1 ppm/°C (C grade 0°C to 70°C) 2 ppm/°C (B grade −40°C to +125°C) 4 ppm/°C (A grade 40°C to +125°C) Output noise (0.1 Hz to 10 Hz): 1 μV p-p at VOUT of 2.048 V typical Initial output voltage error: B, C, D grade: ±0.02% (maximum) Input voltage range: 3 V to 15 V Operating temperature: A grade and B grade: −40°C to +125°C C grade: 0°C to +70°C Output current: +10 mA source/−10 mA sink Low quiescent current: 950 μA (maximum) Low dropout voltage: 300 mV at 2 mA (VOUT ≥ 3 V) 8-lead SOIC package and LCC package AEC-Q100 qualified for automotive applications Long-term drift: 8 ppm typical at 4500 hours