The HMC241 is a general-purpose nonreflective SP4T switch in a low cost leadless surface-mount package and a 16-lead QSOP package. Covering DC to 4 GHz, this switch offers high isolation and has a low insertion loss of 0.5 dB to 0.7 dB at 2 GHz. The switch offers a single positive bias and true TTL/CMOS compatibility. A 2:4 decoder is integrated on the switch requiring only two control lines and a positive bias to select each path, replacing four to eight control lines normally required by GaAs SP4T switches.Applications Base stations, repeaters, and portable wireless WLAN, WiMAX, and WiBro CATV/DBS Test equipment Wireless local loop

The HMC407MS8G & HMC407MS8GE are high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate between 5 and 7 GHz. The amplifier requires no external matching to achieve operation and is thus truly 50 Ohm matched at input and output. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. The amplifier provides 15 dB of gain, +29 dBm of saturated power at 28% PAE from a +5V supply voltage. Power down capability is available to conserve current consumption when the amplifier is not in use.Applications UNII HiperLAN

The HMC410AMS8G(E) is a passive double balanced high IP3 mixer that operates between 9 and 15 GHz. The HMC410AMS8G(E) operates with LO drive levels between +13 dBm and +19 dBm, and provide 8 dB conversion loss across the entire specified frequency band. These mixers require no external components or bias.The HMC410AMS8G(E) is a replacement for the HMC410MS8G(E)Applications Long Haul Radio Platforms Microwave Radio VSAT

The HMC422MS8(E) is a double balanced mixer IC with an integrated LO amplifier. This mixer can operate as an upconverter or downconverter    between 1.2 GHz and 2.6 GHz. With the integrated LO    amplifier, the mixer requires an LO drive level of only    0 dBm, and requires only 30mA from a single positive    +3V rail. The mixer has 8 dB of conversion loss, an    input P1dB of +8 dBm and an input third order intercept point of +15 dBm at 2 GHz.Applications MMDS & ISM Wireless Local Loop WirelessLAN Cellular Infrastructure

The HMC431LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO’s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator’s monolithic structure. Power output is 2 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS 802.11a & HiperLAN WLAN  VSAT Radios  UNII & Point-to-Point Radios

The HMC463 is a GaAs MMIC PHEMT Low Noise AGC Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 14 dB of gain, 2.5 dB noise figure and 19 dBm of output power at 1 dB gain compression while requiring only 60 mA from a +5V supply. An optional gate bias (Vgg2) is provided to allow Adjustable Gain Control (AGC) of 10 dB typical. Gain flatness is excellent at ±0.15 dB from 6 - 18 GHz making the HMC463 ideal for EW, ECM and RADAR applications. The HMC463 amplifiercan easily be integrated into Multi-Chip-Modules (MCMs) due to its small size. All data is with the chip in a 50 Ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils).Applications Telecom Infrastructure  Microwave Radio & VSAT  Military & Space  Test Instrumentation  Fiber Optics

The HMC474 devices are general-purpose SiGe, Heterojunction Bipolar transistor (HBT), gain block MMIC, SMT amplifiers covering dc to 6 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages with up to 10 dBm output power. The HMC474 devices offer 15 dB or 15.5 dB of gain with 20 dBm or 22 dBm output IP3 at 850 MHz while requiring only 25 mA from a single positive supply. The Darlington topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.Applications Cellular/PCS/3G WiBro/WiMAX/4G Fixed wireless and WLAN CATV, cable modem, and direct broadcast (DBS) Microwave radio and test equipment 

The HMC479 devices are SiGe, heterojunction bipolar transistor (HBT) gain block MMIC, SMT amplifiers covering dc to 5 GHz. These amplifiers can be used as cascadable 50 Ω RF/IF gain stages as well as LO or PA drivers with up to 21 dBm output power. The HMC479 amplifiers offer 15 dB of gain with a 33 dBm or 34 dBm output IP3 at 850 MHz, while requiring only 72 mA from a single positive supply. The Darlington feedback topology results in reduced sensitivity to normal process variations and excellent gain stability over temperature, while requiring a minimal number of external bias components.Applications Cellular/PCS/3G  Fixed wireless and WLAN  CATV, cable modem, and direct broadcast satellite (DBS)  Microwave radio and test equipment

The HMC764LP6CE is a fully functioned Fractional-N Phase-Locked-Loop (PLL) with an Integrated Voltage Controlled Oscillator (VCO). The input reference frequency range is 100 kHz to 220 MHz while the advanced delta-sigma modulator design in the fractional PLL allows both ultra-fine step sizes and very low spurious products. The highly integrated structure provides excellent phase noise performance over temperature, shock and process. The HMC764LP6CE is packaged in a leadless QFN 6 x 6 mm surface mount package. The output power is 15 dBm typical, making the HMC764LP6CE ideal for driving the LO port of many of Hittite’s Hi Linearity and I/Q mixer products.For theory of operation and register map refer to the 'PLLs w/ Integrated VCO - Microwave VCOs' Operating Guide.Applications VSAT Radio Point-to-Point / Multi-Point Radio Test Equipment & Industrial Control Military End-Use Phased Array Applications

The HMC769LP6CE is a fully functioned Fractional-N Phase-Locked-Loop (PLL) Frequency Synthesizer with an integrated Voltage Controlled Oscillator (VCO). The input reference frequency range is DC to 350 MHz while the advanced delta-sigma modulator design in the fractional synthesizer allows both ultra-fine step sizes and very low spurious products. The highly integrated structure provides excellent phase noise performance over temperature, shock and process. In addition, the HMC769LP6CE offers frequency sweep and modulation features, external triggering, double-buffering, exact frequency control, phase modulation and more. The HMC769LP6CE is packaged in a leadless QFN 6 x 6 mm surface mount package.For theory of operation and register map refer to the 'PLLs w/ Integrated VCO - Microwave VCOs' Operating Guide.Applications VSAT Radio Microwave Point-To-Point Radios Test Equipment & Industrial Control Military End-Use Phased Array Applications FMCW Radar Systems