The ADG901/ADG902 are wideband switches that use a complementary metal-oxide semiconductor (CMOS) process to provide high isolation and low insertion loss to 1 GHz. The ADG901 is an absorptive (matched) switch with 50 ? terminated shunt legs, while the ADG902 is a reflective switch. These devices are designed such that the isolation is high over the dc to 1 GHz frequency range. These switches enable the user to pass dc signals up to 0.5 V without the use of a dc blocking capacitor. They have on-board CMOS control logic, thus eliminating the need for external controlling circuitry. The control inputs are both CMOS and LVTTL compatible. The low power consumption of these CMOS devices makes them ideally suited to wireless applications and general-purpose high frequency switching.Product Highlights 40 dB Off Isolation at 1 GHz 0.8 dB Insertion Loss at 1 GHz 17 dBm P1dB at 1 GHzApplications Wireless communications General purpose RF switching Dual-band applications High speed filter selection Digital transceiver front-end switch IF switching Tuner modules Antenna diversity switching list

RF Amplifier Low Noise Amplifier, LNA

The HMC407MS8G & HMC407MS8GE are high?efficiency GaAs InGaP Heterojunction Bipolar?Transistor (HBT) MMIC Power amplifiers which?operate between 5 and 7 GHz. The amplifier requires?no external matching to achieve operation and is?thus truly 50 Ohm matched at input and output. The?amplifier is packaged in a low cost, surface mount?8 leaded package with an exposed base for improved?RF and thermal performance. The amplifier?provides 15 dB of gain, +29 dBm of saturated power?at 28% PAE from a +5V supply voltage. Power down?capability is available to conserve current consumption?when the amplifier is not in use.Applications UNII HiperLAN

The HMC415LP3(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 4.9 and 5.9 GHz. The amplifier is packaged in a low cost, leadless surface mount package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +26 dBm of saturated power, and 34% PAE from a +3V supply voltage. Vpd can be used for full power down or RF output power/current control. For +15 dBm OFDM output power (64 QAM, 54 Mbps), the HMC415LP3(E) achieves an error vector magnitude (EVM) of 3.7% meeting 802.11a linearity requirements.Applications 802.11a WLAN HiperLAN WLAN Access Points UNII & ISM Radios

The HMC384LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 3.5 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS Wireless Infrastructure Industrial Controls Test Equipment Military

The HMC390LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 3.55 to 3.9 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4.7 dBm typical from a single supply of 3V @ 42 mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4?4 mm surface mount package.APPLICATIONS Wireless Local Loop (WLL) VSAT & Microwave Radio Test Equipment & Industrial Controls Military

The HMC429LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 4.45 to 5.0 GHz, the VCO?s phase noise performance is excellent over temperature, shock, vibration and process due to the oscillator?s monolithic structure. Power output is 4 dBm typical from a single supply of 3V @ 30mA. The voltage controlled oscillator is packaged in a low cost leadless QFN 4x4 mm surface mount package.APPLICATIONS 802.11a, HiperLAN WLAN VSAT, UNII & Microwave Radio Test Equipment & Industrial Controls Military

The HMC505LP4(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. Covering 6.8 to 7.4 GHz, the VCO?s phase noise performance is excellent over temperature, shock and vibration due to the oscillator?s monolithic structure. Power output is +11 dBm typical from a single supply of +3V @ 80 mA. The voltage controlled oscillator is packaged in a leadless QFN 4x4 mm surface mount package.APPLICATIONS VSAT & Microwave Radio Test Equipment & Industrial Controls Military

The HMC439QS16G(E) is a digital phase-frequency detector intended for use in low noise phase-locked loop applications for inputs from 10 to 1300 MHz. Its combination of high frequency of operation along with its ultra low phase noise floor make possible synthesizers with wide loop bandwidth and low N resulting in fast switching and very low phase noise. When used in conjunction with a differential loop amplifier, the HMC439QS16G(E) generate output voltages that can be used to phase lock a VCO to a reference oscillator. The device is packaged in a low cost, surface mount 16 lead QSOP package with an exposed base for improved RF and thermal performance.APPLICATIONS Point-to-Point Radios Satellite Communication Systems Military Applications Sonet Clock Generation

The HMC472ALP4E are broadband 6-bit GaAs IC digital attenuators in low cost leadless surface mount packages. This single positive control line per bit digital attenuator incorporates off chip AC ground capacitors for near DC operation, making it suitable for a wide variety of RF and IF applications. Covering DC to 3.8 GHz, the insertion loss is less than 2.0 dB typical. The attenuator bit values are 0.5 (LSB), 1, 2, 4, 8, and 16 dB for a total attenuation of 31.5 dB. Attenuation accuracy is excellent at ? 0.25 dB typical step error with an IIP3 of +54 dBm. Six TTL/CMOS control inputs are used to select each attenuation state. A single Vdd bias of +5V is required.APPLICATIONSThe HMC472ALP4E is ideal for: 3G Infrastructure & access points? Cellular/3G, LTE & UMB WiMAX, WiBN & Fixed Wireless? Test Equipment and Sensors GSM, WCDMA & TD-SCDMA