RF Amplifier 10 GHz gain block, Linr Drive/Gain Block

RF Amplifier 10 GHz gain block, Linr Drive/Gain Block

Attenuators 6-bit DAT with 0.25dB LSB, DC-6GHz

RF Switch ICs GaAs MMIC SP4T Non-Reflective Switch, DC

RF Switch ICs DC-6 GHZ Hi Isolation Switch

Digital to Analog Converters - DAC CMOS CONVERTER IC

The HMC358MS8G(E) is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO. The HMC358MS8G(E) integrates resonators, negative resistance devices, varactor diodes, and buffer amplifiers. The VCO?s phase noise performance is excellent over temperature, shock, and process due to the oscillator?s monolithic structure. Power output is 11 dBm typical from a 3V supply voltage. The voltage controlled oscillator is packaged in a low cost, surface mount 8 lead MSOP package with an exposed base for improved RF and thermal performance.APPLICATIONS UNII & Point-to-Point Radios 802.11a & HiperLAN WLAN VSAT Radios

The HMC373LP3 / HMC373LP3E are versatile, high?dynamic range GaAs MMIC Low Noise Amplifiers?that integrates a low loss LNA bypass mode on the?IC. The amplifier is ideal for GSM & CDMA cellular?basestation front-end receivers operating between?700 and 1000 MHz and provides 0.9 dB noise figure,?14 dB of gain and +35 dBm IP3 from a single supply of?+5V @ 90 mA. Input and output return losses are 28?and 12 dB respectively with the LNA requiring minimal?external components to optimize the RF input match,?RF ground and DC bias. By presenting an open or?short circuit to a single control line, the LNA can be?switched into a low 2.0 dB loss bypass mode reducing?the current consumption to 10 ?A. For applications?which require improved noise figure, please see the?HMC668LP3(E).Applications GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio

The HMC241ALP3E is a general-purpose, nonreflective, 100 MHz to 4 GHz single-pole, four-throw (SP4T) switch manufactured using a gallium arsenide (GaAs) process. This switch offers high isolation of 43 dB typical at 2 GHz, low insertion loss of 0.7 dB at 2 GHz, and on-chip termination of the isolated ports.The on-chip circuitry allows the HMC241ALP3E to operate at a single, positive supply voltage range of 3 V to 5 V. This switch requires two positive logic control voltages. The HMC241ALP3E includes an on-chip, binary two to four line decoder that provides logic control from two logic input lines to select one of the four radio frequency (RF) lines.The HMC241ALP3E is available in a 3 mm ? 3 mm, 16-lead LFCSP package. The HMC7992 is the silicon version of this switch and features better performance up to higher frequencies.APPLICATIONS Cellular/4 G infrastructure Wireless infrastructure Automotive telematics Mobile radios Test equipment

The HMC480ST89(E) is a InGaP HBT Gain Block MMIC SMT amplifiers covering DC to 5 GHz and packaged in an industry standard SOT89. The amplifier can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +20 dBm P1dB output power for cellular/3G, FWA, CATV, microwave radio and test equipment applications.?The HMC480ST89(E) offers 19 dB of gain with a +34 dBm output IP3 at 1 GHz while requiring only 82 mA from a single positive supply.?The HMC480ST89(E) InGaP gain blocks offer excellent output IP3 and flat +19 to +20dBm output power performance through 5 GHz compared to equivalent SiGe based products.Applications Cellular / PCS / 3G? Fixed Wireless & WLAN? CATV, Cable Modem & DBS? Microwave Radio & Test Equipment