160 MHz Rail-to-Rail Amplifier with Disable Features: Fully specified for +3 V, +5 V and ±5 V Supplies Output Swings Rail to Rail Input Voltage Range Extends 200 mV Below Ground No Phase Reversal with Inputs 1 V Beyond Supplies Disable/Power-Down Capability Low Power of 5.2 mA (26 mW on 5 V) High Speed and Fast Settling on 5 V: 160 MHz -3 dB Bandwidth (G = +2) 160 V/µs Slew Rate 30 ns Settling Time to 0.1% Good Video Specifications (RL = 150 Ω, G = +2) Gain Flatness of 0.1 dB to 30 MHz 0.03% Differential Gain Error 0.03° Differential Phase Error Low Distortion -69 dBc Worst Harmonic @ 10 MHz Outstanding Load Drive Capability Drives 50 mA 0.5 V from Supply Rails Cap Load Drive of 45 pF

Low Noise, Precision 16 V CMOS, R/R Op Amp Features: Low offset voltage: 100 µV maximum at VS = 5 V Low input bias current: 1 pA maximum Single-supply operation: 5 V to 16 V Low noise: 10 nV/√Hz Wide bandwidth: 4 MHz Unity-gain stable Small package options 3 mm × 3 mm 8-lead LFCSP 8-lead MSOP and narrow SOIC 14-lead TSSOP and narrow SOIC

Dual 55V, EMI Enhanced, Zero Drift, Ultralow Noise,Rail-to-Rail Output Operational Amplifiers Features: Low offset voltage: 5 μV maximum Extremely low offset voltage drift: 22 nV/°C maximum Low voltage noise density:  5.8 nV/√Hz typical  117 nV p-p typical from 0.1 Hz to 10 Hz Low input bias current: 50 pA typical Unity-gain crossover: 3 MHz typical Single-supply operation: input voltage range includes ground and rail-to-rail output Wide range of operating voltages  Single-supply operation: 4.5 V to 55 V  Dual-supply operation: ±2.25 V to ±27.5 V Integrated EMI filters Unity-gain stable Download AD4522-2-KGD Data Sheet. Available As Known Good Die and fully guaranteed to data sheet specifications

Ultrafast SiGe Voltage Comparator (Featuring Reduced Swing NECL Output Drivers) Features: 180 ps propagation delay 25 ps overdrive and slew rate dispersion 8 GHz equivalent input rise time bandwidth 100 ps minimum pulse width 37 ps typical output rise/fall 10 ps deterministic jitter (DJ) 200 fs random jitter (RJ) −2 V to +3 V input range with +5 V/−5 V supplies On-chip terminations at both input pins Resistor-programmable hysteresis Differential latch control Power supply rejection > 70 dB

Rail-to-Rail, Fast, Low Power 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator Features: Fully specified rail-to-rail at VCC = 2.5 V to 5.5 V Input common-mode voltage from −0.2 V to VCC + 0.2 V Low glitch TTL-/CMOS-compatible output stage 40 ns propagation delay Low power 1 mW at 2.5 V Shutdown pin Programmable hysteresis Power supply rejection > 60 dB −40°C to +125°C operation

2.5kV rms Isolated Error Amplifier Features: Stability in isolated feedback applications 0.5% initial accuracy 1% accuracy over the full temperature range Compatible with Type II or Type III compensation networks Reference voltage: 1.225 V Compatible with DOSA Low power operation: <7 mA total Wide voltage supply range VDD1: 3 V to 20 V VDD2: 3 V to 20 V Bandwidth: 400 kHz Isolation voltage: 2.5 kV rms Safety and regulatory approvals UL recognition: 2500 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A VDE certificate of conformity DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 VIORM = 565 V peak Wide temperature range −40°C to +125°C ambient operation 150°C maximum junction temperature Qualified for automotive applications

20 Gbps Clocked Comparator with RSPECL Output Stage Features: Propagation Delay Clock to Output: 120 ps Overdrive & Slew Rate Dispersion: 10 ps Minimum Pulse Width: 60 ps Resistor Programmable Hysteresis Differential Clock Control Input Bandwidth: 10 GHz Power Dissipation: 150 mW RSCML & RSECL Versions Available 16 Lead 3×3mm SMT Package: 9mm2

700 MHz to 4200 MHz Tx DGA Features: Differential input to single-ended output conversion Broad input frequency range: 700 MHz to 4200 MHz Maximum gain: 12.0 dB typical Gain range of 20 dB typical Gain step size: 0.5 dB typical Glitch free, thermometer-based digital step attenuator Fast attack, gain switching with programmable gain step Matched 50 Ω inputs and output

4 MHz, 7 nV/Hz, Low Offset and Drift, High Precision Single Amplifier Features: Offset voltage: 25 μV maximum at 25°C (B grade, 8-lead SOIC, single/ dual)  50 μV maximum at 25°C (A grade, 8-lead SOIC, single/ dual)  50 μV maximum at 25°C (A grade, 14-lead SOIC, quad)  Offset voltage drift: 0.25 μV/°C maximum (B grade, 8-lead SOIC, single/dual)  0.55 μV/°C maximum (A grade, 8-lead SOIC, single/dual)  0.75 μV/°C maximum (A grade, 14-lead SOIC, quad)  MSL1 rated Low input bias current: 1 nA maximum at TA = 25°C Low voltage noise density: 6.9 nV/√Hz typical at f = 1000 Hz  CMRR, PSRR, and AV > 120 dB minimum  Low supply current: 400 μA per amplifier typical Wide gain bandwidth product: 3.9 MHz at ±5 V  Dual-supply operation: Specified at ±5 V to ±15 V  Operates at ±2.5 V to ±15 V  Unity gain stable No phase reversal  Long-term offset voltage drift (10,000 hours): 0.5 μV typical Temperature hysteresis: 1 μV typical

10 MHz, 14.5 nV/Hz, Rail-to-Rail I/O, Zero Input Crossover Distortion Amplifier Features: Power supply rejection ratio (PSRR): 98 dB minimum  Common-mode rejection ratio (CMRR): 95 dB minimum Offset voltage: 120 μV maximum Single-supply operation: 2.7 V to 5.5 V  Dual-supply operation: ±1.35 V to ±2.75 V  Wide bandwidth: 10 MHz  Rail-to-rail input and output  Low noise 2 μV p-p from 0.1 Hz to 10 Hz  14.5 nV/√Hz at 1 kHz  Very low input bias current: 2 pA maximum