50 V, 130 kHz, 32.5 A per Channel, Robust, Over-The-Top, Precision Op Amp Features: Ultrawide common-mode input range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: +3 V to +50 V (to ±25 V for PSRR) Low power supply current: 32.5 μA (typical) Low input offset voltage: ±60 μV maximum Low input offset voltage drift: ±1 μV/°C maximum (B grade) Low input voltage noise 6 Hz typical 1/f noise corner 1000 nV p-p typical at 0.1 Hz to 10 Hz GBP: 130 kHz typical for fTEST = 250 Hz Slew rate: 0.1 V/μs typical at ΔVOUT = 4 V Low power supply current shutdown: 20 μA maximum Low input offset current: ±300 pA maximum Large signal voltage gain: 120 dB minimum for ΔVOUT = 3.5 V CMRR: 120 dB minimum at VCM = −0.1 V to +70 V PSRR: 123 dB minimum at VSY = +3 V to ±25 V Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade) Shutdown feature available for single 6-lead TSOT and dual 10-lead LFCSP packages

50 V, 130 kHz, 32.5 A per Channel, Robust, Over-The-Top, Precision Op Amp Features: Ultrawide common-mode input range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: +3 V to +50 V (to ±25 V for PSRR) Low power supply current: 32.5 μA (typical) Low input offset voltage: ±60 μV maximum Low input offset voltage drift: ±1 μV/°C maximum (B grade) Low input voltage noise 6 Hz typical 1/f noise corner 1000 nV p-p typical at 0.1 Hz to 10 Hz GBP: 130 kHz typical for fTEST = 250 Hz Slew rate: 0.1 V/μs typical at ΔVOUT = 4 V Low power supply current shutdown: 20 μA maximum Low input offset current: ±300 pA maximum Large signal voltage gain: 120 dB minimum for ΔVOUT = 3.5 V CMRR: 120 dB minimum at VCM = −0.1 V to +70 V PSRR: 123 dB minimum at VSY = +3 V to ±25 V Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade) Shutdown feature available for single 6-lead TSOT and dual 10-lead LFCSP packages

50 V, 1 MHz, 165 A per Channel, Robust, Over-The-Top, Precision Op Amps Features: Ultrawide common-mode input range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: +3 V to +50 V (to ±25 V for PSRR) Low power supply current: 165 μA per channel (typical) Low input offset voltage: ±35 μV maximum Low input offset voltage drift: ±0.5 μV/°C maximum (B grade) Low input voltage noise 1/f noise corner: 6 Hz typical 400 nV p-p typical at 0.1 Hz to 10 Hz 17 nV/√Hz typical at 100 Hz High speed GBP: 1.05 MHz typical for fTEST = 2.5 kHz Slew rate: 0.85 V/μs typical at ΔVOUT = 25 V Low power supply current shutdown: 20 μA maximum Low input offset current: ±700 pA maximum Large signal voltage gain: 126 dB minimum for ΔVOUT = 3.5 V CMRR: 120 dB minimum at VCM = −0.1 V to +70 V PSRR: 123 dB minimum at VSY = +3 V to ±25 V Input overdrive tolerant with no phase reversal ±3 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade)

50 V, 8 MHz, 1.5 mA per Channel, Robust, Over-The-Top, Precision Op Amps Features: Ultrawide common-mode range: −VS − 0.1 V to −VS + 70 V Wide power supply voltage range: (VSY): +3.15 V to +50 V (±25 V for PSRR) Low supply current: 1.5 mA per channel (typical) Low input offset voltage: ±40 μV maximum Low input offset voltage drift: ±0.4 μV/°C maximum Low voltage noise: 1/f noise corner: 6 Hz typical 150 nV p-p typical at 0.1 Hz to 10 Hz 7 nV/√Hz typical at 100 Hz (en) High speed GBP: 8 MHz typical Slew rate: 5.5 V/μs typical at ΔVOUT = 25 V Low power shutdown: 20 μA maximum Low input bias current: ±10 nA maximum Large signal voltage gain: 120 dB minimum CMRR: 118 dB, minimum PSRR: 123 dB, minimum Input overdrive tolerant with no phase reversal ±2 kV HBM and ±1.25 kV FICDM Wide temperature range: −55°C to +150°C (H grade)

OVP and EMI Protected, Precision, Low Noise and Bias Current Single Op Amp Features: Low offset voltage: 60 μV maximum at 25°C (8-lead and 14-lead SOIC) Low offset voltage drift: 1 μV/°C maximum (8-lead and 14-lead SOIC) Low input bias current: 1 nA maximum at 25°C Low voltage noise density: 8 nV/√Hz typical at 1 kHz Large signal voltage gain (AVO): 100 dB minimum over full supply voltage and operating temperature Input overvoltage protection to 32 V above and below the supply voltage rail Integrated EMI filter 70 dB typical rejection at 1000 MHz 90 dB typical rejection at 2400 MHz Rail-to-rail output swing Low supply current: 500 μA typical per amplifier Wide bandwidth Gain bandwidth product (AV = 100): 3.5 MHz typical Unity-gain crossover (AV = 1): 3.5 MHz typical −3 dB bandwidth (AV = 1): 6 MHz typical Dual-supply operation Specified at ±5 V to ±15 V, operates over ±2.5 V to ±18 V Unity-gain stable No phase reversal Long-term offset voltage drift (10,000 hours): 2 μV typical Temperature hysteresis: 2 μV typical

Zero Drift, High Voltage, Low Power, Programmable Gain Instrumentation Amplifier Features: Optimized for ADC synchronization Low power: 22 mW (±12 V supplies) 12 binary gain steps from 1/16 V/V to 128 V/V 3 scaling gains: 1 V/V, 1.25 V/V, and 1.375 V/V ±60 V protected input multiplexer Excellent dc precision Low input offset voltage: ±14 μV maximum Low input offset voltage drift: ±0.08 μV/°C maximum Gain calibration via ROM Low gain drift: ±1 ppm/°C maximum High CMRR: 116 dB minimum, G = 1 V/V Low input bias current: ±1.5 nA maximum High input impedance Integrated input EMI filtering Wide input supply range: ±5 V to ±28 V Dedicated output amplifier supplies 7 GPIO ports with special functions Sequential chip select mode External multiplexer control Excitation current sources SPI port with checksum (CRC) support Internal fault detection Wire break test currents On-chip test multiplexer 28-lead, 5 mm × 5 mm LFCSP, 24-lead TSSOP Specified temperature range: −40°C to +105°C

Zero Drift, High Voltage, Low Power, Programmable Gain Instrumentation Amplifier Features: Optimized for ADC synchronization Low power: 22 mW (±12 V supplies) 12 binary gain steps from 1/16 V/V to 128 V/V 3 scaling gains: 1 V/V, 1.25 V/V, and 1.375 V/V ±60 V protected input multiplexer Excellent dc precision Low input offset voltage: ±14 μV maximum Low input offset voltage drift: ±0.08 μV/°C maximum Gain calibration via ROM Low gain drift: ±1 ppm/°C maximum High CMRR: 116 dB minimum, G = 1 V/V Low input bias current: ±1.5 nA maximum High input impedance Integrated input EMI filtering Wide input supply range: ±5 V to ±28 V Dedicated output amplifier supplies 7 GPIO ports with special functions Sequential chip select mode External multiplexer control Excitation current sources SPI port with checksum (CRC) support Internal fault detection Wire break test currents On-chip test multiplexer 28-lead, 5 mm × 5 mm LFCSP, 24-lead TSSOP Specified temperature range: −40°C to +105°C

12-Bit, 170 MSPS/210 MSPS/250 MSPS, 1.8 V Analog-to-Digital Converter Features: SNR = 64.8 dBFS @ fIN up to 70 MHz @ 250 MSPS ENOB of 10.5 @ fIN up to 70 MHz @ 250 MSPS (−1.0 dBFS) SFDR = 80 dBc @ fIN up to 70 MHz @ 250 MSPS (−1.0 dBFS) Excellent Linearity DNL = ±0.3 LSB typical INL = ±0.7 LSB typical CMOS outputs Single data port at up to 250 MHz Interleaved dual port @ 1/2 sample rate up to 125 MHz 700 MHz full power analog bandwidth On-chip reference, no external decoupling required Integrated input buffer and track-and-hold Low power dissipation 272 mW @ 170 MSPS 364 mW @ 250 MSPS Programmable input voltage range 1.0 V to 1.5 V, 1.25 V nominal 1.8 V analog and digital supply operation Selectable output data format (offset binary, twos complement, Gray code)

14-Bit, 1300 MSPS/625 MSPS, JESD204B, Dual Analog-to-Digital Converter Features: JESD204B (Subclass 1) coded serial digital outputs Lane rates up to 16 Gbps 1.6 W total power at 1300 MSPS 800 mW per ADC channel SNR = 65.6 dBFS at 172 MHz (1.59 VP-P input range) SFDR = 78 dBFS at 172.3 MHz (1.59 VP-P input range) Noise density −153.9 dBFS/Hz (1.59 VP-P input range) −155.6 dBFS/Hz (2.04 VP-P input range) 0.95 V, 1.8 V, and 2.5 V supply operation No missing codes Internal ADC voltage reference Flexible input range 1.36 VP-P to 2.04 VP-P (1.59 VP-P typical) 2 GHz usable analog input full power bandwidth >95 dB channel isolation/crosstalk Amplitude detect bits for efficient AGC implementation 2 integrated digital downconverters per ADC channel 48-bit NCO Programmable decimation rates Differential clock input SPI control Integer clock divide by 2 and divide by 4 Flexible JESD204B lane configurations On-chip dithering to improve small signal linearity

14-Bit, 3 GSPS, JESD204B, Single Analog-to-Digital Converter Features: JESD204B (Subclass 1) coded serial digital outputs Support for lane rates up to 16 Gbps per lane 2 W total power at 3 GSPS (default settings) Performance at −2 dBFS amplitude, 2.6 GHz input SFDR = 70 dBFS SNR = 57.2 dBFS Performance at −9 dBFS amplitude, 2.6 GHz input SFDR = 78 dBFS SNR = 59.5 dBFS Integrated input buffer Noise density = −152 dBFS/Hz 0.975 V, 1.9 V, and 2.5 V dc supply operation 9 GHz analog input full power bandwidth (−3 dB) Amplitude detect bits for efficient AGC implementation 4 integrated digital downconverters 48-bit NCO 4 cascaded half-band filters Phase coherent NCO switching Up to 4 channels available Serial port control Integer clock with divide by 2 and divide by 4 options Flexible JESD204B lane configurations On-chip dither AEQ-Q100 qualified for automotive applications