Phase Locked Loops - PLL Phase-Locked Oscillator , 14.7-15.4GHz

Instrumentation Amplifier 1 Circuit 8-SO

Isolated, Precision Half-Bridge Driver, 0.1 A Output Features: Isolated high-side and low-side outputs High side or low side relative to input: ±700 VPEAK High-side/low-side differential: 700 VPEAK 0.1 A peak output current High frequency operation: 5 MHz maximum High common-mode transient immunity: >75 kV/µs High temperature operation: 105°C Wide body, 16-lead SOIC Safety and regulatory approvals UL recognition 2500 V rms for 1 minute per UL 1577 VDE certificate of conformity DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12 VIORM = 560 V peak

Micropower, Dual-Channel Digital Isolators, Default Low (2/0 Channel Directionality) Features: Ultralow power operation 3.3 V operation 6 μA per channel quiescent current, refresh enabled 0.3 μA per channel quiescent current, refresh disabled 148 μA/Mbps per channel typical dynamic current 116 μA/Mbps per channel typical dynamic current Quad-channel products available See datasheet for additional features

Robust, Triple Ch. Isolator W/ Output Enable & 0 Reverse Channels Features: High common-mode transient immunity: 100 kV/µs High robustness to radiated and conducted noise Low propagation delay 13 ns maximum for 5 V operation 15 ns maximum for 1.8 V operation 150 Mbps maximum guaranteed data rate Backward compatibility ADuM130E1/ADuM131E1 pin compatible with ADuM1300/ADUM1301 Low dynamic power consumption 1.8 V to 5 V level translation High temperature operation: 125°C Fail-safe high or low options 16-lead, RoHS compliant, SOIC package See data sheet for additional information

Dual-Channel, Digital Isolator, Enhanced System-Level ESD Reliability Features: Enhanced system-level ESD performance per IEC 61000-4-x  High temperature operation: 125°C Narrow body, RoHS-compliant, 8-lead SOIC Low power operation  5 V operation (refer to data sheet) 3.3 V operation (refer to data sheet) Bidirectional communication 3.3 V/5 V level translation See data sheet for additional featuresADuM3200-EP supports defense and aerospace applications (AQEC standard) Download ADuM3200-EP Data Sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline  Enhanced product change notification  Qualification data available on request Qualified for automotive applications Automotive versions qualified per AEC-Q100 V62/14627 DSCC Drawing Number

Triple-Channel, Digital Isolator, Enhanced System-Level ESD Reliability (2/1 channel directionality) Features: Enhanced system-level ESD performance per IEC 61000-4-x Low power operation 5 V operation 2.0 mA per channel maximum at 0 Mbps to 2 Mbps 4.1 mA per channel maximum at 10 Mbps 36 mA per channel maximum at 90 Mbps 3.3 V operation 1.0 mA per channel maximum at 0 Mbps to 2 Mbps 2.8 mA per channel maximum at 10 Mbps 17 mA per channel maximum at 90 Mbps Bidirectional communication 3.3 V/5 V level translation High temperature operation: 105°C High data rate: dc to 90 Mbps (NRZ) Precise timing characteristics 2 ns maximum pulse width distortion 2 ns maximum channel-to-channel matching High common-mode transient immunity: >25 kV/μs Output enable function 16-lead SOIC wide body, RoHS-compliant package Safety and regulatory approvals UL recognition: 2500 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A VDE Certificate of Conformity DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12 VIORM = 560 V peak CQC Certification per GB4943.1-2011

Precision Wide-range (3 nA - 3 mA) High-Side Current Mirror Features: Accurately mirrors input current (1:1 ratio) over 6 decades - enables monitoring at low signal levels  Linearity 1% from 3 nA to 3 mA Stable mirror input voltage Voltage held 1 V below supply using internal reference or may be set externally providing greater flexibility in design Adjustable input current limit provides protection to the connected photodiode 2.7 V to 8 V single-supply operation Miniature 8-lead chip scale package (LFCSP 2 mm × 3 mm) saves valuable board space

10 MHz TO 10 GHz 67 dB TruPwr Detector Features: Accurate rms-to-dc conversion from 10 MHz to 10 GHz Single-ended ±1 dB dynamic range: 67 dB at 2.14 GHz    No balun or external input matching required Response independent of waveform types, such as GSM/CDMA/W-CDMA/TD-SCDMA/WiMAX/LTE Logarithmic slope: 55 mV/dB Temperature stability: <±1 dB from −40°C to +125°C Operating temperature: −55°C to +125°C Supply voltage: 4.75 V to 5.25 V Sleep current: 250 µA Pin-compatible with ADL5902 and AD8363

Micropower 3-Sensor Combination Including Acceleration and Temperature Features: All sensors sampled synchronously Up to 400 Hz ODR Samples can be synchronized to external trigger Ultralow power 1.95 A at 100 Hz ODR, 2.0 V supply, all sensors on 270 nA at 6 Hz motion activated wake-up mode 10 nA standby current 12-bit resolution for all sensors Acceleration scale factor down to 1 mg/LSB Temperature scale factor: 0.065C/LSB (typical) Built-in features for motion-based system level power savings Adjustable threshold sleep/wake modes for motion activation Accelerometer, temperature sensor, and provision for third analog sensor input Autonomous interrupt processing, without need for microcontroller intervention, to allow the rest of the system to be turned off completely Deep embedded FIFO minimizes host processor load Awake state output enables implementation of standalone, motion activated switch Wide supply and I/O voltage ranges: 1.6 V to 3.5 VOperates off 1.8 V to 3.3 V railsPower can be derived from coin cell batterySPI digital interfaceSmall and thin 3 mm 3.25 mm 1.06 mm package