10 MHz, G = 1, 10, 100, 1000 iCMOS Programmable Gain Instrumentation Amplifier Features: Small package: 10-lead MSOP Programmable gains: 1, 10, 100, 1000 Digital or pin-programmable gain setting Wide supply: ±5 V to ±15 V Excellent dc performance High CMRR: 100 dB (minimum), G = 100 Low gain drift: 10 ppm/°C (maximum) Low offset drift: 1.2 µV/°C (maximum), G = 1000 See data sheet for additional features

Low Power, Wide Supply Range, Low Cost Unity-Gain Difference Amplifiers Features: Wide input range beyond supplies Rugged input overvoltage protection Low supply current: 200 μA maximum per channel Low power dissipation: 0.54 mW at VS = 2.7 V Bandwidth: 550 kHz CMRR: 86 dB minimum, dc to 10 kHz System offset voltage: ±2 μV/°C maximum (B Grade) Low gain drift: 1 ppm/°C maximum (B Grade) Enhanced slew rate: 1.1 V/μs Wide power supply range Single supply: 2.0 V to 36 V Dual supplies: ±2 V to ±18 V

0.1 GHz TO 2.5 GHz, 70 dB Logarithmic Detector / Controller Features: Wide bandwidth: 0.1 GHz to 2.5 GHz min High dynamic range: 70 dB to ±3.0 dB High accuracy: ±1.0 dB over 65 dB range (@ 1.9 GHz) Fast response: 40 ns full-scale typical Controller mode with error output Scaling stable over supply and temperature Wide supply range: 2.7 V to 5.5 V Low power: 40 mW at 3 V Power-down feature: 60 mW at 3 V

RF Vector Modulator 1.5 GHz TO 2.4 GHz Features: Cartesian amplitude and phase modulation 1.5 GHz to 2.4 GHz frequency range Continuous magnitude control of −4.5 dB to −34.5 dB Continuous phase control of 0° to 360° Output third-order intercept 17.5 dBm Output 1 dB compression point 8.5 dBm Output noise floor −150.5 dBm/Hz at full gain Adjustable modulation bandwidth up to 230 MHz Fast output power disable 4.75 V to 5.25 V single-supply voltage 

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

Bidirectional, Zero Drift, Current Sense Amplifier Features: Typical 0.1 µV/°C offset drift Maximum ±400 µV voltage offset over full temperature range 2.7 V to 5.5 V power supply operating range Electromagnetic interference (EMI) filters included High common-mode input voltage range −2 V to +70 V continuous −3 V to +80 V survival Initial gain = 60 V/V Wide operating temperature range AD8417WB: −40°C to +125°C AD8417WH: −40°C to +150°C Bidirectional operation Available in 8-lead SOIC and 8-lead MSOP Common-mode rejection ratio (CMRR): 86 dB, dc to 10 kHz Qualified for automotive applications

3 nV /Hz, Low Power Instrumentation Amplifier Features: Low power 2.3 mA maximum supply current Low noise 3.2 nV/√Hz maximum input voltage noise at 1 kHz 200 fA/√Hz current noise at 1 kHz Excellent ac specifications  10 MHz bandwidth (G = 1) 2 MHz bandwidth (G = 100) 0.6 µs settling time to 0.001% (G = 10) 80 dB CMRR to 20 kHz (G = 1) 35 V/µs slew rate High precision dc performance (AD8421BRZ) 94 dB CMRR minimum (G = 1) 0.2 μV/C maximum input offset voltage drift 1 ppm/C maximum gain drift (G = 1)500 pA maximum input bias current Inputs protected to 40 V from opposite supply ±2.5 V to 18 V dual supply (5 V to 36 V single supply) Gain set with a single resistor (G = 1 to 10,000) Available in 8-lead LFCSP, 8-lead MSOP, and 8-lead SOIC Download AD8421-KGD Data Sheet Available As Known Good Die and fully guaranteed to data sheet specificationsAD8421-EP supports defense and aerospace applications (AQEC standard) Download AD8421-EP data sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline One assembly/test site One fabrication site Enhanced product change notification Qualification data available on request V62/13625 DSCC Drawing Number

High Performance, Low Power, Rail-to-Rail Precision Instrumentation Amplifier Features: Low power: 330 μA maximum quiescent current Rail-to-rail output Low noise and distortion 8 nV/√Hz maximum input voltage noise at 1 kHz 0.15 μV p-p RTI noise (G = 100) 0.5 ppm nonlinearity with 2 kΩ load (G = 1) Excellent ac specifications 80 dB minimum CMRR at 10 kHz (G = 1) 2.2 MHz bandwidth (G = 1) High precision dc performance (AD8422BRZ) 150 dB minimum CMRR (G = 1000) 0.04% maximum gain error (G = 1000) 0.3 μV/°C maximum input offset drift 0.5 nA maximum input bias current Wide supply range 4.6 V to 36 V single supply ±2.3 V to ±18 V dual supply Input overvoltage protection: 40 V from opposite supply Gain range: 1 to 1000 Available in 8-lead LFCSP, 8-lead MSOP, and 8-lead SOIC_N

60 MHz, 2000 V/s, Monolithic Op Amp with Quad Low Noise Features: Wide bandwidth 60 MHz at gain of −1  33 MHz at gain of −10  Slew rate: 2000 V/μs  20 MHz full power bandwidth, 20 V p-p, RL = 500 Ω  Fast settling: 100 ns to 0.1% (10 V step) Differential gain error: 0.03% at 4.4 MHz  Differential phase error: 0.16° at 4.4 MHz  Low offset voltage: 150 μV maximum (B Grade) Low quiescent current: 6.5 mA  Available in tape and reel in accordance with EIA-481-A standard