20 V, 500 mA, Low Noise, CMOS LDO Features: Input voltage range: 3.3 V to 20 V Maximum output current: 500 mA Low Noise: 15 μV rms for fixed output versions PSRR Performance of 60 dB at 10 kHz, VOUT = 3.3 V Reverse current protection Low dropout voltage: 350 mV at 500 mA Initial accuracy: ±0.8% Accuracy over line, load, and temperature −2% to +1%, TJ = −40°C to +125°C −1.25% to +1%, TJ = 0°C to +85°C Low quiescent current (VIN = 5 V), IGND = 900 μA with 500 mA load Low shutdown current: <40 μA at VIN = 12 V, stable with small 1 μF ceramic output capacitor 7 fixed output voltage options: 1.5 V, 1.8 V, 2.5 V, 3 V, 3.3 V, 5 V, and 9 V Adjustable output from 1.22 V to VIN − VDO Foldback current limit and thermal overload protection User programmable precision UVLO/enable Power-good indicator 8-lead LFCSP and 8-lead SOIC packages

2.7 V to 5.5 V, <100 A, 12-BitnanoDAC, SPI Interface in LFCSP and SC70 Features: 6-lead SC70 and LFCSP packages Micropower operation: 100 μA maximum at 5 V Power-down typically to 0.2 μA at 3 V 2.7 V to 5.5 V power supply Guaranteed monotonic by design Power-on reset to 0 V with brownout detection 3 power-down functions Low power serial interface with Schmitt-triggered inputs On-chip output buffer amplifier, rail-to-rail operation SYNC interrupt facility Minimized zero-code error AD5601 buffered 8-bit DAC B version: ±0.5 LSB INL AD5611 buffered 10-bit DAC B version: ±0.5 LSB INL A version: ±4 LSB INL AD5621 buffered 12-bit DAC B version: ±1 LSB INL A version: ±6 LSB INL

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GaAs InGaP HBT MMIC Ultra Low Phase Noise, Distributed Amplifier, 2 - 18 GHz Features: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz P1dB Output Power: +15 dBm Gain: 14 dB Output IP3: +27 dBm Supply Voltage: +5V @ 64 mA 50 Ω Matched Input/Output Die Size: 2.80 x 1.73 x 0.1 mm

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