5.5 V, 5 A, High Efficiency, Step-Down DC-to-DC Regulators with Output Tracking Features: Continuous output current: 5 A Integrated MOSFET High-side on resistance: 19 m Low-side on resistance: 15 m Reference voltage: 0.6 V ± 1% over temperature range Input voltage range: 2.7 V to 5.5 V Current mode architecture Switching frequency Fixed frequency: 620 kHz or 1.2 MHz Adjustable frequency: 250 kHz to 1.4 MHz Synchronizes to external clock: 250 kHz to 1.4 MHz Selectable synchronize phase shift: in phase or out of phase External compensation Programmable soft start Startup into a precharged output Voltage tracking input Power-good output and precision enable input Accurate current limit Available in 24-lead, 4 mm × 4 mm LFCSP package Supported by ADIsimPower™ design tool

1.2 A, 20 V, 700 kHz Nonsynchronous Step-down Switching Regulator Features: High efficiency, up to 91% 1.2 A maximum load current ±2% output accuracy over temperature range 700kHz (ADP2300) or 1.4MHz (ADP2301) switching frequency options Wide input voltage range: 3.0 V to 20 V Current-mode control architecture Output voltage from 0.8 V to 0.85×VIN See datasheet for additional features

Dual-Channel, Digital Isolator, Enhanced System-Level ESD Reliability Features: Enhanced system-level ESD performance per IEC 61000-4-x  High temperature operation: 125°C Narrow body, RoHS-compliant, 8-lead SOIC Low power operation  5 V operation (refer to data sheet) 3.3 V operation (refer to data sheet) Bidirectional communication 3.3 V/5 V level translation See data sheet for additional featuresADuM3200-EP supports defense and aerospace applications (AQEC standard) Download ADuM3200-EP Data Sheet (pdf) Military temperature range (−55°C to +125°C) Controlled manufacturing baseline  Enhanced product change notification  Qualification data available on request Qualified for automotive applications Automotive versions qualified per AEC-Q100 V62/14627 DSCC Drawing Number

Triple-Channel, Digital Isolator, Enhanced System-Level ESD Reliability (2/1 channel directionality) Features: Enhanced system-level ESD performance per IEC 61000-4-x Low power operation 5 V operation 2.0 mA per channel maximum at 0 Mbps to 2 Mbps 4.1 mA per channel maximum at 10 Mbps 36 mA per channel maximum at 90 Mbps 3.3 V operation 1.0 mA per channel maximum at 0 Mbps to 2 Mbps 2.8 mA per channel maximum at 10 Mbps 17 mA per channel maximum at 90 Mbps Bidirectional communication 3.3 V/5 V level translation High temperature operation: 105°C High data rate: dc to 90 Mbps (NRZ) Precise timing characteristics 2 ns maximum pulse width distortion 2 ns maximum channel-to-channel matching High common-mode transient immunity: >25 kV/μs Output enable function 16-lead SOIC wide body, RoHS-compliant package Safety and regulatory approvals UL recognition: 2500 V rms for 1 minute per UL 1577 CSA Component Acceptance Notice 5A VDE Certificate of Conformity DIN V VDE V 0884-10 (VDE V 0884-10): 2006-12 VIORM = 560 V peak CQC Certification per GB4943.1-2011

Micropower 3-Sensor Combination Including Acceleration and Temperature Features: All sensors sampled synchronously Up to 400 Hz ODR Samples can be synchronized to external trigger Ultralow power 1.95 A at 100 Hz ODR, 2.0 V supply, all sensors on 270 nA at 6 Hz motion activated wake-up mode 10 nA standby current 12-bit resolution for all sensors Acceleration scale factor down to 1 mg/LSB Temperature scale factor: 0.065C/LSB (typical) Built-in features for motion-based system level power savings Adjustable threshold sleep/wake modes for motion activation Accelerometer, temperature sensor, and provision for third analog sensor input Autonomous interrupt processing, without need for microcontroller intervention, to allow the rest of the system to be turned off completely Deep embedded FIFO minimizes host processor load Awake state output enables implementation of standalone, motion activated switch Wide supply and I/O voltage ranges: 1.6 V to 3.5 VOperates off 1.8 V to 3.3 V railsPower can be derived from coin cell batterySPI digital interfaceSmall and thin 3 mm 3.25 mm 1.06 mm package

12-Bit High Speed Multiplying D/A Converter Features: Differential Nonlinearity: ±1/2 LSB Nonlinearity: 0.05% Fast Settling Time: 250 ns High Compliance: -5 V to +10 V Differential Outputs: 0 to 4 mA Guaranteed Monotonicity: 12 bits Low Full-Scale Tempco: 10 ppm/°C Circuit Interface to TTL, CMOS, ECL, PMOS/NMOS Low Power Consumption: 225 mW Industry Standard AM6012 Pinout Available in Die Form

Quad 8-Bit Multiplying CMOS D/A Converter with Memory Features: Four DACs in a 28 Pin, 0.6 Inch Wide DIP or 28-Pin JEDEC Plastic Chip Carrier ±1/4 LSB Endpoint Linearity Guaranteed Monotonic DACs Matched to Within 1% Microprocessor Compatible Read/Write Capability (with Memory) TTL/CMOS Compatible Four-Quadrant Multiplication Single-Supply Operation (+5 V) Low Power Consumption Latch-Up Resistant Available in Die Form

13 Gbps, Fast Rise Time AND/NAND/OR/NOR Gate, with Programmable Output Voltage Features: Supports High Data Rates: up to 13 Gbps Differential & Single-Ended Ouputs Fast Rise & Fall Times: 19 / 18 ps Low Power Consumption: 230 mW typ. Single Supply: -3.3V Programmable Differential Output Voltage Swing: 600 - 1100 mV Propagation Delay: 95 ps 16 Lead Ceramic 3 × 3mm SMT Package: 9mm2;

High Speed, 5 V, 0.1 F CMOS RS-232 Driver/Receiver Features: 120 kB transmission rate Small (0.1 µF) charge pump capacitors Single 5 V power supply Meets TIA/EIA-232-E and V.28 specifications 2 drivers and 2 receivers On-board dc-to-dc converters ±9 V output swing with 5 V supply Low power BiCMOS: 2.5 mA ICC ±30 V receiver input levels

Equalisers Front Panel HDMI Buffer - TMDS Only